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在蓝宝石上生长CeO2 缓冲层的原位双温工艺法及Tl-2212薄膜的技术改进

谢清连 王争 黄国华 王向红 游峰 季鲁 赵新杰 方兰 阎少林

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在蓝宝石上生长CeO2 缓冲层的原位双温工艺法及Tl-2212薄膜的技术改进

谢清连, 王争, 黄国华, 王向红, 游峰, 季鲁, 赵新杰, 方兰, 阎少林

The in situ two-temperature process of preparation of CeO2 films on sapphire substrates and technical improvements of fabrication of Tl-2212 films

Xie Qing-Lian, Wang Zheng, Huang Guo-Hua, Wang Xiang-Hong, You Feng, Ji Lu, Zhao Xin-Jie, Fang Lan, Yan Shao-Lin
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  • 报道了在蓝宝石衬底上制备CeO2缓冲层的原位双温工艺法及其对Tl2Ba2CaCu2O8(Tl-2212)薄膜超导特性的影响.XPS和AFM测试结果表明,采用原位双温工艺法制备缓冲层,具有工艺简单,薄膜表面光滑,衬底材料原子扩散量少等特点.在先驱膜的高温后退火过程中,40 nm厚的CeO2薄膜就能有效地阻挡衬底材料对超导薄膜底层的扩散.随后制备厚度为530 nm的Tl-2212
    The preparation of CeO2 buffer layers on r-cut sapphire substrates by in situ two-temperature process and Tl-2212 superconducting films has been studied. The results of XPS and AFM show that this simple process of growing buffer layer produces CeO2 film with smooth surface, which can hold back the diffusion of Al from sapphire into Tl-2212 film. The 530 nm thick Tl-2212 films grown on the CeO2 buffer layers subsequently possess excellent electrical property. The films have a high transition temperature (Tc =108.2 K), a high critical current density (Jc=6.58 MA/cm2at 77 K and zero applied magnetic field) and a low surface resistance (Rs=185 μΩ at 10 GHz and 77 K), and their superconductivity can be improved significantly.
    • 基金项目: 国家重点基础研究发展计划(973)项目(批准号:2006CB601006),国家高技术研究发展计划(863)新材料领域(批准号:2006AA03Z213)和广西高校优秀人才资助计划项目(批准号:RC2007024)资助的课题.
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  • 文章访问数:  7227
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  • 被引次数: 0
出版历程
  • 收稿日期:  2009-02-17
  • 修回日期:  2009-04-01
  • 刊出日期:  2009-11-20

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