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透射式指数掺杂GaAs光电阴极最佳厚度研究

杨智 邹继军 常本康

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透射式指数掺杂GaAs光电阴极最佳厚度研究

杨智, 邹继军, 常本康

Research on the optimal thickness of transmission-mode exponential-doping GaAs photocathode

Yang Zhi, Zou Ji-Jun, Chang Ben-Kang
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  • 通过研究指数掺杂GaAs光电阴极中光电子扩散漂移长度与均匀掺杂GaAs光电阴极中光电子扩散长度的差异,确定透射式指数掺杂GaAs光电阴极的最佳厚度范围为16—22 μm.利用量子效率公式对透射式指数掺杂GaAs光电阴极最佳厚度进行了仿真分析,发现厚度为20 μm时阴极积分灵敏度最大.外延生长阴极厚度分别为16和20 μm的两种透射式指数掺杂GaAs样品并进行了激活实验,测得样品的积分灵敏度分别为1228和1547 μA/lm,两者的比值为796%. 实验结果与仿真结果符合.
    The difference between the diffusion drift length of photoelectrons in exponential-doping GaAs photocathode and that in uniform-doping GaAs photocathode is studied. According to quantum equations, the optimized thickness of transmission-mode exponential-doping GaAs photocathode is simulated to be 20 μm. Two transmission-mode exponential-doping GaAs samples with the thickness of 16 and 20 μm are activated by (Cs,O) alternation technique. Integral sensitivities of the two samples are 1228 and 1547 μA/lm, respectively. The ratio of integral sensitivities of the two samples is 0796∶1, which agrees with the simulation result.
    • 基金项目: 国家自然科学基金(批准号:60678043,60801036)资助的课题.
    [1]

    [1]Reilly D J, Taylor M J, Petta R J, Marcus C M, Hanson M P, Gossard A C 2008 Science 321 1350

    [2]

    [2]Liu Z, Sun Y, Peterson S, Pianetta P 2008 Appl. Phys. Lett. 92 241107

    [3]

    [3]Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541

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    [4]Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 6109 (in Chinese) [邹继军、常本康、杨智 2007 物理学报 56 610]

    [5]

    [5]Ding H B, Pang W N , Liu Y B , Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) [丁海兵、庞文宁、刘义保、尚仁成 2005 物理学报 54 4097]

    [6]

    [6]Spindt C J, Besser R S, Cao R 1989 Appl. Phys. Lett. 54 1148

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    [7]Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军、常本康、杨智 2007 物理学报 56 2992]

    [8]

    [8]Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese) [牛军、杨智、常本康、乔建良、张益军 2009 物理学报 58 5002]

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    [9]Schneider J E, Sen P, Pickard D S J 1998 J.Vac. Sci. Techn. 16 3192

    [10]

    ]Guo L J, Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese) [郭立俊、Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 物理学报 54 3200]

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    ]Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Techn. B 21 1863

    [12]

    ]Fisher D G, Enstrom R E, Escher J S 1972 J. Appl. Phys. 43 3815

    [13]

    ]Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413

    [14]

    ]Spicer W E, Herrera-Gomez A 1993 Proc. SPIE 2022 18

    [15]

    ]James L W, Moll J L 1969 Phys. Rev. 183 740

    [16]

    ]Zou J J, Chang B K, Chen H L, Liu L 2007 J. Appl. Phys. 101 033126

    [17]

    ]Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p114 (in Chinese) [刘恩科、朱秉升、罗晋生 2003 半导体物理学(北京:电子工业出版社) 第114页]

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    ]Turnbull A A, Evans G B 1968 J. Appl. Phys. 1 155

  • [1]

    [1]Reilly D J, Taylor M J, Petta R J, Marcus C M, Hanson M P, Gossard A C 2008 Science 321 1350

    [2]

    [2]Liu Z, Sun Y, Peterson S, Pianetta P 2008 Appl. Phys. Lett. 92 241107

    [3]

    [3]Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541

    [4]

    [4]Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 6109 (in Chinese) [邹继军、常本康、杨智 2007 物理学报 56 610]

    [5]

    [5]Ding H B, Pang W N , Liu Y B , Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) [丁海兵、庞文宁、刘义保、尚仁成 2005 物理学报 54 4097]

    [6]

    [6]Spindt C J, Besser R S, Cao R 1989 Appl. Phys. Lett. 54 1148

    [7]

    [7]Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军、常本康、杨智 2007 物理学报 56 2992]

    [8]

    [8]Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese) [牛军、杨智、常本康、乔建良、张益军 2009 物理学报 58 5002]

    [9]

    [9]Schneider J E, Sen P, Pickard D S J 1998 J.Vac. Sci. Techn. 16 3192

    [10]

    ]Guo L J, Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese) [郭立俊、Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 物理学报 54 3200]

    [11]

    ]Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Techn. B 21 1863

    [12]

    ]Fisher D G, Enstrom R E, Escher J S 1972 J. Appl. Phys. 43 3815

    [13]

    ]Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413

    [14]

    ]Spicer W E, Herrera-Gomez A 1993 Proc. SPIE 2022 18

    [15]

    ]James L W, Moll J L 1969 Phys. Rev. 183 740

    [16]

    ]Zou J J, Chang B K, Chen H L, Liu L 2007 J. Appl. Phys. 101 033126

    [17]

    ]Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p114 (in Chinese) [刘恩科、朱秉升、罗晋生 2003 半导体物理学(北京:电子工业出版社) 第114页]

    [18]

    ]Turnbull A A, Evans G B 1968 J. Appl. Phys. 1 155

计量
  • 文章访问数:  7209
  • PDF下载量:  741
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-09-08
  • 修回日期:  2009-11-04
  • 刊出日期:  2010-03-05

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