搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

GaN基白光发光二极管失效机理分析

薛正群 黄生荣 张保平 陈朝

引用本文:
Citation:

GaN基白光发光二极管失效机理分析

薛正群, 黄生荣, 张保平, 陈朝

Analysis of failure mechanism of GaN-based white light-emitting diode

Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao
PDF
导出引用
  • 对小功率白光GaN基发光二极管(LED)在室温、40 ℃和70 ℃下进行温度加速老化寿命实验,通过对老化前后不同时间段器件的电学、光学和热学特性进行测量来分析器件的失效机理,着重分析器件的芯片和荧光粉的失效机理.器件老化前后的I-V特性表明:老化过程中,器件的串联电阻和低正向偏压下的隧道电流增大,这是由于器件工作时其芯片的欧姆接触退化和半导体材料的缺陷密度升高而引起的.器件的热特性表明:高温度应力下器件的热阻迅速变大,封装材料迅速退化,这是器件退化的主要原因;光谱曲线表明温度加速了器件的
    Accelerated aging and life-time tests at ambient temperatures of 40 ℃,70 ℃ and room temperature were carried out on GaN-based white light-emitting diodes (LEDs). The electrical, optical and thermal characteristics of the device were compared before and after different aging times in order to investigate the failure mechanism of the device. Here, we mainly analyzed the failure mechanism related with the chip and the phosphor of the LED. The current-voltage characteristics demonstrated that both the series resistance and the tunnel current increase under lower forward voltages after aging, which were due to the degradation of p-type ohmic contact and the increase of defect density. The thermal characteristics confirmed that the thermal resistance increased rapidly under high aging temperature. This was mainly attributed to the fracture of different materials inside the devices caused by the difference in thermal expansion coefficients. Optical measurements indicated that high aging temperature could accelerate the degradation of output power and reduce the conversion efficiency of the phosphor as well. Finally, the life time of the device was calculated using Arrhenius-equation, and the failure mechanism was analyzed.
    • 基金项目: 国家自然科学基金(批准号:60476022)和国家高技术研究发展计划(批准号:2004AA311020)资助的课题.
    [1]

    Khan M A, Shatalov M, Maruska H P, Wang H M, Kuokstis E 2005 Jpn. J. Appl. Phys. 44 7191

    [2]

    Bergh A, Craford G, Duggal A, Haitz R 2001 Phys. Today 5544 42

    [3]

    Narendran N, Deng L, Pysar R M, Gu Y, Yu H 2004 Proceedings of the Third Internaltional Conference on Solid State Lighting 2003 San Diego, United States, August 5, 2003 p267

    [4]

    Trevisanello L, Meneghini M, Mura G, Vanzi M P, Meneghesso G, Zanoni E 2008 IEEE Trans. Dev. Mater. Reliab. 8 304

    [5]

    Uddin A, Wei A C, Andersson T G 2005 Thin Solid Films 483 378

    [6]

    Chen H T, Lü Y J, Chen Z, Zhang H B, Gao Y L, Chen G L 2009 Acta Phys. Sin. 58 5700 (in Chinese) [陈焕庭、吕毅军、 陈 忠、张海兵、高玉琳、陈国龙 2009 物理学报 58 5700] 〖7] Li B Q, Zheng T C, Xia Z H 2009 Acta Phys. Sin. 58 7189 (in Chinese) [李炳乾、郑同场、夏正浩 2009 物理学报 58 7189]

    [7]

    Huang S R 2007 Ph.D. Dissertation (Xiamen: Xiamen University) (in Chinese) [黄生荣 2007 (博士学位论文) (厦门:厦门大学)]

    [8]

    Huang S R, Tian H T, Chen C 2007 Chinese Lighting 5 83 (in Chinese) [黄生荣、田洪涛、陈 朝 2007 中国照明 5 83]

    [9]

    Huang S R, Chen C 2007 Acta Phys. Sin. 56 4596 (in Chinese) [黄生荣、陈 朝 2007 物理学报 56 4596]

    [10]

    Chen C, Tian H T 2006 Chinese Patent CN200310121093.5 (in Chinese) [陈 朝、田洪涛 2006 中国发明专利 CN200310121 093.5]

    [11]

    Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 1268 (in Chinese)[薛正群、黄生荣、张保平、陈 朝 2010 物理学报 59 1268]

    [12]

    Osinski M, Zeller J, Chiu P C, Phillips B S 1996 Appl. Phys. Lett. 69 898

    [13]

    Yang L, Ma X H, Feng Q, Hao Y 2008 Chin. Phys. B 17 2696

    [14]

    Barton D L, Osinski M, Perlin P, Eliseev P G, Lee J 1999 Microelectron. Reliab. 39 1219

    [15]

    Meneghesso G, Levada S, Zanoni E 2003 Microelectron. Reliab. 43 1737

    [16]

    Li Y X, Min Y L, Zhou X Z, You X Z 2003 Chinese J. Inorg. Chem. 19 1169 (in Chinese) [李永绣、 闵宇霖、周雪珍、游效曾 2003 无机化学学报 19 1169]

    [17]

    Hu J Z, Yang L Q, Kim L, Shin M W 2007 Semicond. Sci. Technol. 22 1249

    [18]

    Yu L S 2006 Semiconductor Heterojunction Physics (Beijing: Science Press) pp78,84 (in Chinese) [虞丽生 2006 半导体异质结物理 (北京:科学出版社) 第78,84页]

    [19]

    Hu J Z, Yang L Q, Shin M W 2008 J. Phys. D: Appl. Phys. 41 1

    [20]

    Shi M 2004 Physics and Technology of Semiconductor Devices (Suzhou: Suzhou University Press) p93 (in Chinese) [施 敏 2004 半导体器件物理 (苏州:苏州大学出版社) 第93页]

    [21]

    Hsu C Y, Lan W H, Wu Y S 2003 Appl. Phys. Lett. 83 2447

    [22]

    Szekely V, Bien T V 1988 Solid-State Electronics 31 1363

    [23]

    Rencz M, Poppe A, Kollar E 2005 IEEE Trans. Compon.Pack T. 28 51

    [24]

    Osinski M, Barton D L, Perlin P, Lee J 1998 J. Cryst. Growth 189/190 808

    [25]

    Fan C X 2006 Adcanced Display 65 11 (in Chinese) [范朝勋 2006 现代显示 65 11]

    [26]

    Fang F B, Wang Y H, Song D H, Xu B H 2008 Chin J. Lumin. 29 353 (in Chinese) [方福波、王垚浩、宋代辉、徐彬海 2008 发光学报 29 353]

    [27]

    Yamakoshi S, Hasegawa O, Hamaguchi H, Abe M, Ymaoka T 1977 Appl. Phys. Lett. 31 627

    [28]

    Zhao M, Zhang W S, Xu L S 2006 Proceeding of the 10th National Seminar LED industry and academic conference Dalian, China, September 25—29, 2006 (in Chinese) [赵 敏、张万生、徐立生 2006 第十届全国LED产业研讨与学术会议论文集 大连,中国,9月25—29日,2006]

  • [1]

    Khan M A, Shatalov M, Maruska H P, Wang H M, Kuokstis E 2005 Jpn. J. Appl. Phys. 44 7191

    [2]

    Bergh A, Craford G, Duggal A, Haitz R 2001 Phys. Today 5544 42

    [3]

    Narendran N, Deng L, Pysar R M, Gu Y, Yu H 2004 Proceedings of the Third Internaltional Conference on Solid State Lighting 2003 San Diego, United States, August 5, 2003 p267

    [4]

    Trevisanello L, Meneghini M, Mura G, Vanzi M P, Meneghesso G, Zanoni E 2008 IEEE Trans. Dev. Mater. Reliab. 8 304

    [5]

    Uddin A, Wei A C, Andersson T G 2005 Thin Solid Films 483 378

    [6]

    Chen H T, Lü Y J, Chen Z, Zhang H B, Gao Y L, Chen G L 2009 Acta Phys. Sin. 58 5700 (in Chinese) [陈焕庭、吕毅军、 陈 忠、张海兵、高玉琳、陈国龙 2009 物理学报 58 5700] 〖7] Li B Q, Zheng T C, Xia Z H 2009 Acta Phys. Sin. 58 7189 (in Chinese) [李炳乾、郑同场、夏正浩 2009 物理学报 58 7189]

    [7]

    Huang S R 2007 Ph.D. Dissertation (Xiamen: Xiamen University) (in Chinese) [黄生荣 2007 (博士学位论文) (厦门:厦门大学)]

    [8]

    Huang S R, Tian H T, Chen C 2007 Chinese Lighting 5 83 (in Chinese) [黄生荣、田洪涛、陈 朝 2007 中国照明 5 83]

    [9]

    Huang S R, Chen C 2007 Acta Phys. Sin. 56 4596 (in Chinese) [黄生荣、陈 朝 2007 物理学报 56 4596]

    [10]

    Chen C, Tian H T 2006 Chinese Patent CN200310121093.5 (in Chinese) [陈 朝、田洪涛 2006 中国发明专利 CN200310121 093.5]

    [11]

    Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 1268 (in Chinese)[薛正群、黄生荣、张保平、陈 朝 2010 物理学报 59 1268]

    [12]

    Osinski M, Zeller J, Chiu P C, Phillips B S 1996 Appl. Phys. Lett. 69 898

    [13]

    Yang L, Ma X H, Feng Q, Hao Y 2008 Chin. Phys. B 17 2696

    [14]

    Barton D L, Osinski M, Perlin P, Eliseev P G, Lee J 1999 Microelectron. Reliab. 39 1219

    [15]

    Meneghesso G, Levada S, Zanoni E 2003 Microelectron. Reliab. 43 1737

    [16]

    Li Y X, Min Y L, Zhou X Z, You X Z 2003 Chinese J. Inorg. Chem. 19 1169 (in Chinese) [李永绣、 闵宇霖、周雪珍、游效曾 2003 无机化学学报 19 1169]

    [17]

    Hu J Z, Yang L Q, Kim L, Shin M W 2007 Semicond. Sci. Technol. 22 1249

    [18]

    Yu L S 2006 Semiconductor Heterojunction Physics (Beijing: Science Press) pp78,84 (in Chinese) [虞丽生 2006 半导体异质结物理 (北京:科学出版社) 第78,84页]

    [19]

    Hu J Z, Yang L Q, Shin M W 2008 J. Phys. D: Appl. Phys. 41 1

    [20]

    Shi M 2004 Physics and Technology of Semiconductor Devices (Suzhou: Suzhou University Press) p93 (in Chinese) [施 敏 2004 半导体器件物理 (苏州:苏州大学出版社) 第93页]

    [21]

    Hsu C Y, Lan W H, Wu Y S 2003 Appl. Phys. Lett. 83 2447

    [22]

    Szekely V, Bien T V 1988 Solid-State Electronics 31 1363

    [23]

    Rencz M, Poppe A, Kollar E 2005 IEEE Trans. Compon.Pack T. 28 51

    [24]

    Osinski M, Barton D L, Perlin P, Lee J 1998 J. Cryst. Growth 189/190 808

    [25]

    Fan C X 2006 Adcanced Display 65 11 (in Chinese) [范朝勋 2006 现代显示 65 11]

    [26]

    Fang F B, Wang Y H, Song D H, Xu B H 2008 Chin J. Lumin. 29 353 (in Chinese) [方福波、王垚浩、宋代辉、徐彬海 2008 发光学报 29 353]

    [27]

    Yamakoshi S, Hasegawa O, Hamaguchi H, Abe M, Ymaoka T 1977 Appl. Phys. Lett. 31 627

    [28]

    Zhao M, Zhang W S, Xu L S 2006 Proceeding of the 10th National Seminar LED industry and academic conference Dalian, China, September 25—29, 2006 (in Chinese) [赵 敏、张万生、徐立生 2006 第十届全国LED产业研讨与学术会议论文集 大连,中国,9月25—29日,2006]

  • [1] 刘阳, 柴常春, 于新海, 樊庆扬, 杨银堂, 席晓文, 刘胜北. GaN高电子迁移率晶体管强电磁脉冲损伤效应与机理. 物理学报, 2016, 65(3): 038402. doi: 10.7498/aps.65.038402
    [2] 黄斌斌, 熊传兵, 张超宇, 黄基锋, 王光绪, 汤英文, 全知觉, 徐龙权, 张萌, 王立, 方文卿, 刘军林, 江风益. 硅基板和铜基板垂直结构GaN基LED变温变电流发光性能的研究. 物理学报, 2014, 63(21): 217806. doi: 10.7498/aps.63.217806
    [3] 张明兰, 杨瑞霞, 李卓昕, 曹兴忠, 王宝义, 王晓晖. GaN厚膜中的质子辐照诱生缺陷研究. 物理学报, 2013, 62(11): 117103. doi: 10.7498/aps.62.117103
    [4] 张盼君, 孙慧卿, 郭志友, 王度阳, 谢晓宇, 蔡金鑫, 郑欢, 谢楠, 杨斌. 含有量子点的双波长LED的光谱调控. 物理学报, 2013, 62(11): 117304. doi: 10.7498/aps.62.117304
    [5] 林晓玲, 肖庆中, 恩云飞, 姚若河. 倒装芯片塑料球栅阵列封装器件在外应力下的失效机理. 物理学报, 2012, 61(12): 128502. doi: 10.7498/aps.61.128502
    [6] 王度阳, 孙慧卿, 解晓宇, 张盼君. GaN基LED量子阱内量子点发光性质的模拟分析. 物理学报, 2012, 61(22): 227303. doi: 10.7498/aps.61.227303
    [7] 张福平, 杜金梅, 刘雨生, 刘艺, 刘高旻, 贺红亮. PZT 95/5陶瓷电致失效机理研究. 物理学报, 2011, 60(5): 057701. doi: 10.7498/aps.60.057701
    [8] 张运炎, 范广涵. 不同掺杂类型的GaN间隔层和量子阱垒层对双波长LED作用的研究. 物理学报, 2011, 60(1): 018502. doi: 10.7498/aps.60.018502
    [9] 乔建良, 常本康, 钱芸生, 王晓晖, 李飙, 徐源. GaN真空面电子源光电发射机理研究. 物理学报, 2011, 60(12): 127901. doi: 10.7498/aps.60.127901
    [10] 金豫浙, 胡益培, 曾祥华, 杨义军. GaN基多量子阱蓝光LED的γ辐照效应. 物理学报, 2010, 59(2): 1258-1262. doi: 10.7498/aps.59.1258
    [11] 乔建良, 田思, 常本康, 杜晓晴, 高频. 负电子亲和势GaN光电阴极激活机理研究. 物理学报, 2009, 58(8): 5847-5851. doi: 10.7498/aps.58.5847
    [12] 周 梅, 赵德刚. p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响. 物理学报, 2008, 57(7): 4570-4574. doi: 10.7498/aps.57.4570
    [13] 申 晔, 邢怀中, 俞建国, 吕 斌, 茅惠兵, 王基庆. 极化诱导的内建电场对Mn δ掺杂的GaN/AlGaN量子阱居里温度的调制. 物理学报, 2007, 56(6): 3453-3457. doi: 10.7498/aps.56.3453
    [14] 郭亮良, 冯 倩, 马香柏, 郝 跃, 刘 杰. GaN FP-HEMTs中击穿电压与电流崩塌的关系. 物理学报, 2007, 56(5): 2900-2904. doi: 10.7498/aps.56.2900
    [15] 周 梅, 左淑华, 赵德刚. 一种新型GaN基肖特基结构紫外探测器. 物理学报, 2007, 56(9): 5513-5517. doi: 10.7498/aps.56.5513
    [16] 宋淑芳, 陈维德, 许振嘉, 徐叙瑢. 掺Er/Er+O的GaN薄膜光学性质的研究. 物理学报, 2007, 56(3): 1621-1626. doi: 10.7498/aps.56.1621
    [17] 蒙 康, 姜森林, 侯利娜, 李 蝉, 王 坤, 丁志博, 姚淑德. Mg+注入对GaN晶体辐射损伤的研究. 物理学报, 2006, 55(5): 2476-2481. doi: 10.7498/aps.55.2476
    [18] 宋淑芳, 陈维德, 许振嘉, 徐叙瑢. 掺Er/Pr的GaN薄膜深能级的研究. 物理学报, 2006, 55(3): 1407-1412. doi: 10.7498/aps.55.1407
    [19] 万 威, 唐春艳, 王玉梅, 李方华. GaN晶体中堆垛层错的高分辨电子显微像研究. 物理学报, 2005, 54(9): 4273-4278. doi: 10.7498/aps.54.4273
    [20] 秦 琦, 于乃森, 郭丽伟, 汪 洋, 朱学亮, 陈 弘, 周均铭. 使用SiNx原位淀积方法生长的GaN外延膜中的应力研究. 物理学报, 2005, 54(11): 5450-5454. doi: 10.7498/aps.54.5450
计量
  • 文章访问数:  8883
  • PDF下载量:  850
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-10-13
  • 修回日期:  2009-11-25
  • 刊出日期:  2010-07-15

/

返回文章
返回