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有机自旋阀的磁电阻性质研究

任俊峰 王玉梅 原晓波 胡贵超

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有机自旋阀的磁电阻性质研究

任俊峰, 王玉梅, 原晓波, 胡贵超

Magnetoresistance effect in an organic spin valve

Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao
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  • 考虑到有机半导体中极化子和双极化子特殊的电荷-自旋关系,从自旋扩散方程和欧姆定律出发,理论研究了"铁磁/有机半导体/铁磁"有机自旋阀结构中的磁电阻性质.计算发现,磁电阻在数值上随有机半导体层中极化子比率的增加而增大,随有机半导体层厚度的增加而迅速减小.同时发现自旋相关界面电阻能在很大程度上提高系统的磁电阻.讨论了铁磁层和有机半导体电导率比率、铁磁层极化率等对系统磁电阻性质的影响.
    Based on the spin diffusion theory and the Ohm’s law, we theoretically studied the magnetoresistance (MR) effect in an organic spin valve with structure of ferromagnetic/organic semiconductor/ferromagnetic system, which takes into account the special characteristics of organic semiconductors. Self-trapped states, such as spin polarons as well as spinless bipolarons are assumed to be the main carriers in organic semiconductors. From the calculation, it is found that MR ratio increases with the increasing of the polaron proportion and rapidly decreases with the increasing of the organic layer thickness. MR ratio can be enhanced remarkably when the interfacial resistances are spin related. Effects of the conductivity match and the spin polarization of the ferromagnetic layer on the MR are also discussed.
    • 基金项目: 国家自然科学基金 (批准号:10904083, 10904084, 10847151),山东省中青年科学家科研奖励基金(批准号:BS2009CL008, 2007BS01017) 和山东省高等学校科技奖励计划项目(批准号:J09LA03)资助的课题.
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    Bobbert P A, Nguyen T D, van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801

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    Bergeson J D, Prigodin V N, Lincoln D M, Epstein A J 2008 Phys. Rev. Lett. 100 067201

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    Ren J F, Zhang Y B, Xie S J 2008 Org. Electron. 9 1017

    [18]

    Zhang Y B, Ren J F, Xie S J 2008 Org. Electron. 9 687

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    Zhang Y B, Ren J F, Lei J, Xie S J 2009 Org. Electron. 10 568

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  • [1]

    Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnár S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488

    [2]

    Zutic I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323

    [3]

    Naber W J M, Faez S, Gvan der Wie W 2007 J. Phys. D: Appl. Phys. 40 R205

    [4]

    Xiong Z H, Wu D, Vardeny Z V, Shi J 2004 Nature 427 821

    [5]

    Santos T S, Lee J S, Migdal P, Lekshmi I C, Satpati B, Moodera J S 2007 Phys. Rev. Lett. 98 016601

    [6]

    Bloom F L, Wagemans W, Kemerink M, Koopmans B 2007 Phys. Rev. Lett. 99 257201

    [7]

    Majumdar S, Huhtinen H, Majumdar H S, Laiho R, Osterbacka R 2008 J. Appl. Phys. 104 033910

    [8]

    Dediu V, Hueso L E, Bergenti I, Riminucci A, Borgatti F, Graziosi P, Newby C, Casoli F, De Jong M P, Taliani C, Zhan Y 2008 Phys. Rev. B 78 115203

    [9]

    Drew A J, Hoppler J, Schulz L, Pratt F L, Desai P, Shakya P, Kreouzis T, Gillin W P, Suter A, Morley N A, Malik1 V K, Dubroka A, Kim K W, Bouyanfif H, Bourqui F, Bernhard C, Scheuermann R, Nieuwenhuys G J, Prokscha T, Morenzoni E 2009 Nature Mater. 8 109

    [10]

    Wang T X, Wei H X, Zeng Z M, Han X F, Hong Z M, Shi G Q 2006 Appl. Phys. Lett. 88 242505

    [11]

    Pang Z Y, Chen Y X, Liu T T, Zhang Y P, Xie S J, Yan S S, Han S H 2006 Chin. Phys. Lett. 23 1566

    [12]

    Sheng Y, Nguyen T D, Veeraraghavan G, Mermer O, Wohlgenannt M 2007 Phys. Rev. B 75 035202

    [13]

    Bobbert P A, Nguyen T D, van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801

    [14]

    Bergeson J D, Prigodin V N, Lincoln D M, Epstein A J 2008 Phys. Rev. Lett. 100 067201

    [15]

    Ren J F, Fu J Y, Liu D S, Mei L M, Xie S J 2005 J. Appl. Phys. 98 074503

    [16]

    Ren J F, Zhang Y B, Xie S J 2007 Acta Phys. Sin. 56 4785 (in Chinese) [任俊峰、张玉滨、解士杰2007 物理学报56 4785]

    [17]

    Ren J F, Zhang Y B, Xie S J 2008 Org. Electron. 9 1017

    [18]

    Zhang Y B, Ren J F, Xie S J 2008 Org. Electron. 9 687

    [19]

    Zhang Y B, Ren J F, Lei J, Xie S J 2009 Org. Electron. 10 568

    [20]

    Mi Y L, Zhang M, Yan H 2008 Phys. Lett. A 372 6434

    [21]

    Zhao J Q, Qiao S Z, Zhang N Y, Xu F Y, Pang Y T, Chen Y 2009 Curr. Appl. Phys. 9 919

计量
  • 文章访问数:  10819
  • PDF下载量:  1082
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-11-03
  • 修回日期:  2009-12-28
  • 刊出日期:  2010-09-15

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