ZnSe/BeTe Ⅱ型量子阱中界面结构对发光特性的影响

冀子武; 郑雨军; 徐现刚; 鲁云

doi:10.7498/aps.59.7986

摘要

报道了具有特殊界面结构(界面包含三个Zn—Te或Te—Zn化学键)的非掺杂ZnSe/BeTe II 型量子阱在低温(5—10 K)条件下的空间间接光致发光(PL)光谱的实验结果. PL光谱显示了一个较弱的双峰结构和较低的线性偏振度,并且这两个峰的线性偏振度相反. 此外,这个PL光谱也强烈地依赖于一个外加电场的变化. 这些结果表明样品的两个发光峰是分别来自两个界面的发光跃迁,并且特殊界面结构降低了空间间接PL的发光效率和线性偏振性,以及界面附近的内秉电场. 随着激发强度的增加,PL谱的高能端发光峰显示了一个

关键词:

Abstract

The results are reported of the spatially indirect photoluminescence (PL) spectrum measurements performed on undoped ZnSe/BeTe type-Ⅱ quantum wells with special interface structures at low temperatures (5—10 K). The PL spectra have two main peaks that show a weak PL intensity and a low linear polarization degree and that their linear polarizations are contrary to each other, And the PL spectra are strikingly dependent on an applied external electric field perpendicular to the layers. The results show that the special interface structures reduce spatially indirect radiative recombination efficiency and linear polarization degree, and that a weak built-in electric field exists in the heterostructure. With the increase of excitation intensity, the PL peak on high energy side shows a rapid increase. This is explained by the formation of high charge density on both sides of the high energy side interface.

Keywords:

作者及机构信息

(1)千叶大学大学院工学研究科,千叶 263-8522,日本; (2)山东大学晶体材料国家重点实验室,济南 250100; (3)山东大学物理学院,济南 250100

基金项目: 国家自然科学基金 (批准号:10844003,10874101),山东省自然科学基金(批准号:Y2008A10),国家重点基础研究发展计划(批准号:2009CB930503)资助的课题.

Authors and contacts

(1)Graduate School and faculty of Engineering, Chiba University, Chiba 263-8522, Japan; (2)School of Physics, Shandong University, Jinan 250100, China; (3)State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

参考文献

[1]	Xing Y H, Han J, Liu J P, Deng J, Niu N H, Shen G D 2007 Acta Phys. Sin. 56 7295 (in Chinese ) [刑艳辉、韩军、刘建平、邓军、牛南辉、沈光地 2007 物理学报 56 7295]
[2]	Ji Z W, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 6609 (in Chinese)[冀子武、三野弘文、音贤一、室清文、秋本良一、嶽山正二郎 2008 物理学报 57 6609]
[3]	Waag A, Fisher F, Lugauer H J 1996 J. Appl. Phys. 80 792
[4]	Yakovlev D R, Ivchenko E L 2000 Phys. Rev. B 61 2421
[5]	Ji Z W, Lu Y, Chen J X, Mino H, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 1214 (in Chinese)[冀子武、鲁云、陈锦祥、三野弘文、秋本良一、嶽山正二郎 2008 物理学报 57 1214]
[6]	Ji Z W, Mino H, Kojima E, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 3260 (in Chinese )[冀子武、三野弘文、小映二、秋本良一、嶽山正二郎 2008 物理学报 57 3260]
[7]	Maksimov A A, Zaitsev S V, Tartakovskii I I, Kulakovskii V D, Gippius N A, Yakovlev D R, Ossau W, Euscher G, Waag A, Landwehr G 2000 Phys. Status Solidi B 221 523
[8]	Zaitsev S V, Maksimov A A, Kulakovskii V D, Tartakovskii I I, Yakovlev D R, Ossau W, Hansen L, Landwehr G, Waag A 2002 J. Appl. Phys. 91 652
[9]	Butov L V, Filin A I 1998 Phys. Rev. B 58 1980
[10]	Mino H, Fujikawa A, Akimoto R, Takeyama S 2004 Physica E 22 640
[11]	Ji Z W, Takeyama S, Mino H, Oto K, Muro K, Akimoto R 2008 Appl. Phys. Lett. 92 093107
[12]	Ji Z W, Mino H, Oto K, Akimoto R 2009 Semicond. Sci. Technol. 24 095016
[13]	Mino H, Ji Z W, Kano A. Oto K, Muro K, Akimoto R, Takeyama S 2006 J. Phys: Conf. Seri. 51 399
[14]	Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[15]	Ji Z W, Yamamoto H, Mino H, Akimoto R, Takeyama S 2004 Physica E 22 632
[16]	Yakovlev D R, Platonov A V, Ivchenko E L, Kochereshko V P, Sas C, Ossau W, Hansen L, Waag A, Landwehr G, Molenkamp L W 2002 Phys..Rev. Lett. 88 257401
[17]	Skolnick M S, Rorison J M, Nash K J, Mowbray D J, Tapster P R, Bass S J, Pitt A D 1987 Phys. Rev. Lett. 58 2130

施引文献

[1]	Xing Y H, Han J, Liu J P, Deng J, Niu N H, Shen G D 2007 Acta Phys. Sin. 56 7295 (in Chinese ) [刑艳辉、韩军、刘建平、邓军、牛南辉、沈光地 2007 物理学报 56 7295]
[2]	Ji Z W, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 6609 (in Chinese)[冀子武、三野弘文、音贤一、室清文、秋本良一、嶽山正二郎 2008 物理学报 57 6609]
[3]	Waag A, Fisher F, Lugauer H J 1996 J. Appl. Phys. 80 792
[4]	Yakovlev D R, Ivchenko E L 2000 Phys. Rev. B 61 2421
[5]	Ji Z W, Lu Y, Chen J X, Mino H, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 1214 (in Chinese)[冀子武、鲁云、陈锦祥、三野弘文、秋本良一、嶽山正二郎 2008 物理学报 57 1214]
[6]	Ji Z W, Mino H, Kojima E, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 3260 (in Chinese )[冀子武、三野弘文、小映二、秋本良一、嶽山正二郎 2008 物理学报 57 3260]
[7]	Maksimov A A, Zaitsev S V, Tartakovskii I I, Kulakovskii V D, Gippius N A, Yakovlev D R, Ossau W, Euscher G, Waag A, Landwehr G 2000 Phys. Status Solidi B 221 523
[8]	Zaitsev S V, Maksimov A A, Kulakovskii V D, Tartakovskii I I, Yakovlev D R, Ossau W, Hansen L, Landwehr G, Waag A 2002 J. Appl. Phys. 91 652
[9]	Butov L V, Filin A I 1998 Phys. Rev. B 58 1980
[10]	Mino H, Fujikawa A, Akimoto R, Takeyama S 2004 Physica E 22 640
[11]	Ji Z W, Takeyama S, Mino H, Oto K, Muro K, Akimoto R 2008 Appl. Phys. Lett. 92 093107
[12]	Ji Z W, Mino H, Oto K, Akimoto R 2009 Semicond. Sci. Technol. 24 095016
[13]	Mino H, Ji Z W, Kano A. Oto K, Muro K, Akimoto R, Takeyama S 2006 J. Phys: Conf. Seri. 51 399
[14]	Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[15]	Ji Z W, Yamamoto H, Mino H, Akimoto R, Takeyama S 2004 Physica E 22 632
[16]	Yakovlev D R, Platonov A V, Ivchenko E L, Kochereshko V P, Sas C, Ossau W, Hansen L, Waag A, Landwehr G, Molenkamp L W 2002 Phys..Rev. Lett. 88 257401
[17]	Skolnick M S, Rorison J M, Nash K J, Mowbray D J, Tapster P R, Bass S J, Pitt A D 1987 Phys. Rev. Lett. 58 2130

计量

文章访问数: 6675
PDF下载量: 810
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板