最小二乘拟合计算有机薄膜晶体管迁移率的研究

陈跃宁; 徐征; 赵谡玲; 孙钦军; 尹飞飞; 董宇航

doi:10.7498/aps.59.8113

摘要

本文通过制备了一个基于并五笨为有源层的顶栅底接触OTFT器件获取电流电压实验数据,并运用电流电压特性曲线理论拟合计算方法计算其场效应迁移率.研究发现,采用不同的拟合方法得到的场效应迁移率值有较大的差异.若选取转移特性曲线线性区距中心1/2范围内测试点进行最小二乘拟合计算出的场效应迁移率能减少采用其他拟合方法的固有不准确性,而且与其他方法得到的场效应迁移率最接近.

关键词:

In this article,organic thin-film transistors (OTFTs) with top-gate and bottom contact geometry based on pentacene as active layer were fabricated. The experimental data of the I-V were obtained from the organic thin-film transistors. The field-effect mobility of the OTFT was calculated by fitting of theoretical calculation to the experimental data. We find that field-effect mobility values have great difference by different fitting methods. We calculate the field-effect mobility by least-squares fitting method to the experimental data of the I-V away from the center of the linear region of the transfer characteristics curves 1/2 range. The inherent inaccuracy of other fitting method can be reduced. The results is the nearest field-effect mobility obtained with other methods.

Keywords:

作者及机构信息

(1)北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京 100044; (2)北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京 100044;辽宁大学物理学院,沈阳 110036; (3)辽宁大学物理学院,沈阳 110036

基金项目: 国家自然科学基金(批准号:10974013, 10774013, 60978060),教育部博士点基金(批准号:20090009110027, 20070004024), 博士点新教师基金(批准号:20070004031),国家重点基础研究发展计划(批准号:2010CB327704), 北京市自然科学基金(批准号:1102028)和北京市科技新星计划(批准号:2007A024)资助的课题.

Authors and contacts

(1)Institute of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information(Beijing Jiaotong University),Ministry of Education,Beijing 100044,China; (2)Institute of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information(Beijing Jiaotong University),Ministry of Education,Beijing 100044,China;Physics Department,Liaoning University,Shenyang 110036,China; (3)Physics Department,Liaoning University,Shenyang 110036,China

参考文献

[1]	Han S H,Kim J H,Janga J,Cho S M,Oh M H,Le S H,Choo D J 2006 Appl. Phys. Lett. 88 073519
[2]	Bana D,Han S,Lu Z H,Oogarah T,Spring Thorpe A J,Liu H C 2007 Appl. Phys. Lett. 90 093108
[3]	Lee S H,Choo D J 2007 Appl. Phys. Lett. 90 033502
[4]	Zhang F J,Aollmer A,Zhang J,Xu Z,Rabe J P,Koch N,Org 2007 Electron. 8 606
[5]	Gundlach D J,Zhou L,Nichols J A 2006 Appl. Phys. 100 024509
[6]	Tian X Y,Xu Z,Zhao S L,Zhang F J 2009 Chin. Phys. B 18 5078
[7]	Tian X Y,Xu Z,Zhao S L,Zhang F J 2010 Chin. Phys. B 19 018103
[8]	Jackson T N 2005 Nature (London) 4 581
[9]	Berggren M 2007 Nature (London) 6 3
[10]	David J G 2007 Nature (London) 6 173
[11]	Liang W,Daniel Fine,Ananth Dodabalapurb 2004 Appl. Phys. Lett. 85 6386
[12]	Wang J,Wang H B,Yan X J,Huang H C,Yana D H 2005 Appl. Phys. Lett. 87 093507
[13]	Berliocchil M,Manentil M,Bolognesil A,Carlol A D,Luglil P,Paolesse R,Mandoy F,Natale C D,Proietti E,Petrocco G 2004 Semicond. Sci. Technol. 19 354
[14]	Antoniadis H,Hsieh B R,Abkowitz M A 1993 Appl. Phys. Lett. 62 3167
[15]	Lin L B,Jenekhe S A,Borsenberger P M 1996 Appl. Phys. Lett. 69 3495
[16]	Wei Z Q,Yang Q X,Sun G J 2001 Journal of Optoelectronics ·Laser 12 930 (in Chinese) [魏振乾、杨庆鑫、孙桂娟等 2001 光电子〖17] Yuan G C,Xu Z,Zhao S L,Zhang F J 2008 Chin. Phys. B 17 1887
[17]	Singh T B,Sariciftci N S 2006 Annu. Rev. Mater. Res. 36 199
[18]	Dimitrakopoulos C D,Mascaro D J 2001 IBM J. Res. Dev. 45 11

施引文献

[1]	Han S H,Kim J H,Janga J,Cho S M,Oh M H,Le S H,Choo D J 2006 Appl. Phys. Lett. 88 073519
[2]	Bana D,Han S,Lu Z H,Oogarah T,Spring Thorpe A J,Liu H C 2007 Appl. Phys. Lett. 90 093108
[3]	Lee S H,Choo D J 2007 Appl. Phys. Lett. 90 033502
[4]	Zhang F J,Aollmer A,Zhang J,Xu Z,Rabe J P,Koch N,Org 2007 Electron. 8 606
[5]	Gundlach D J,Zhou L,Nichols J A 2006 Appl. Phys. 100 024509
[6]	Tian X Y,Xu Z,Zhao S L,Zhang F J 2009 Chin. Phys. B 18 5078
[7]	Tian X Y,Xu Z,Zhao S L,Zhang F J 2010 Chin. Phys. B 19 018103
[8]	Jackson T N 2005 Nature (London) 4 581
[9]	Berggren M 2007 Nature (London) 6 3
[10]	David J G 2007 Nature (London) 6 173
[11]	Liang W,Daniel Fine,Ananth Dodabalapurb 2004 Appl. Phys. Lett. 85 6386
[12]	Wang J,Wang H B,Yan X J,Huang H C,Yana D H 2005 Appl. Phys. Lett. 87 093507
[13]	Berliocchil M,Manentil M,Bolognesil A,Carlol A D,Luglil P,Paolesse R,Mandoy F,Natale C D,Proietti E,Petrocco G 2004 Semicond. Sci. Technol. 19 354
[14]	Antoniadis H,Hsieh B R,Abkowitz M A 1993 Appl. Phys. Lett. 62 3167
[15]	Lin L B,Jenekhe S A,Borsenberger P M 1996 Appl. Phys. Lett. 69 3495
[16]	Wei Z Q,Yang Q X,Sun G J 2001 Journal of Optoelectronics ·Laser 12 930 (in Chinese) [魏振乾、杨庆鑫、孙桂娟等 2001 光电子〖17] Yuan G C,Xu Z,Zhao S L,Zhang F J 2008 Chin. Phys. B 17 1887
[17]	Singh T B,Sariciftci N S 2006 Annu. Rev. Mater. Res. 36 199
[18]	Dimitrakopoulos C D,Mascaro D J 2001 IBM J. Res. Dev. 45 11

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