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双极晶体管在强电磁脉冲作用下的损伤效应与机理

柴常春 席晓文 任兴荣 杨银堂 马振洋

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双极晶体管在强电磁脉冲作用下的损伤效应与机理

柴常春, 席晓文, 任兴荣, 杨银堂, 马振洋

The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulse

Chai Chang-Chun, Xi Xiao-Wen, Ren Xing-Rong, Yang Yin-Tang, Ma Zhen-Yang
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  • 针对典型n+-p-n-n+结构的双极晶体管,从器件内部电场强度、电流密度和温度分布变化的分析出发,研究了在强电磁脉冲(electromagnetic pulse,EMP)作用下其内在损伤过程与机理.研究表明,双极晶体管损伤部位在不同幅度的注入电压作用下是不同的,注入电压幅度较低时,发射区中心下方的集电区附近首先烧毁,而在高幅度注入电压作用下,由于基区-外延层-衬底构成的PIN结构发生击穿,导致靠近发射极一侧的基极边缘处首先发生烧毁.利用数据分析软件,对不同注入电
    A study of the internal damage process and mechanism of the typical n+-p-n-n+ structure bipolar transistor induced by the intense electromagnetic pulse (EMP) is carried out in this paper from the variation analysis of the distribution of the electric field,the current density and the temperature. Research shows that the damage position of the bipolar transistor is different with the different magnitude of the injecting voltage,when the magnitude of the injecting voltage is low the damage will appear firstly near the collector region under the center of the emitter region,and when the magnitude of the injecting voltage is sufficiently high the damage will appear firstly at the edge of the base near the emitter due to the breakdown of the PIN structure composed of the base-epitaxial layer-collector. Adopting the data analysis software,the relation equation between the device damage power P and the pulse width T under different injecting voltage is obtained. Owing to the variety of the device damage energy,it is demonstrated that the empirical formulas of the intense electromagnetic pulse P=AT-1 (A is a constant) is modified to P=AT-1.4 for the bipolar transistor.
    • 基金项目: 国家自然科学基金(批准号:60776034)资助的课题.
    [1]

    Wunsch D C,Bell R R 1968 IEEE Transactions on Nuclear Science 15 244

    [2]

    Dobykin V D,Kharchenko V V 2006 Journal of Communications Technology and Electronics 51 231

    [3]

    Dobykin V D 2008 Journal of Communications Technology and Electronics 53 100

    [4]

    Wang Y,Jia S,Sun L,Zhang G G,Zhang X,Ji L J 2007 Acta Phys. Sin. 56 7243 (in Chinese) [王 源、贾 嵩、孙 磊、张钢刚、张 兴、吉利久 2007 物理学报 56 7243]

    [5]

    Chai C C,Yang Y T,Zhang B,Leng P,Yang Y,Rao W 2008 Journal of Semiconductors 29 2403 (in Chinese) [柴常春、杨银堂、张 冰、冷 鹏、杨 杨、饶 伟 2008 半导体学报 29 2403]

    [6]

    Chai C C,Yang Y T,Zhang B,Leng P,Yang Y,Rao W 2009 Semiconductor Science and Technology 24 035003

    [7]

    Xi X W,Chai C C,Ren X R,Yang Y T,Zhang B 2009 Proceedings of the 16th IEEE International Symposium on the Physical and Failure Analysis of integrated Circuits,Suzhou,China,July 6—10,2009 p443

    [8]

    Manck O,Engl W L 1975 IEEE Transaction on Electron Device 22 339

    [9]

    Yu W,Cai X H,Huang W H,Liu G Z 1999 High Power Laser and Particle Beams 11 355 (in Chinese) [余 稳、蔡新华、黄文华、刘国治 1999 强激光与粒子束 11 355]

    [10]

    Li P,Fang J Y,Liu G Z,Huang W H 2000 Experiment and Study 23 70 (in Chinese) [李 平、方进勇、刘国治、黄文华 2000 试验与研究 23 70]

    [11]

    Xi X W,Chai C C,Ren X R,Yang Y T,Zhang B,Hong X 2010 Journal of Semiconductors 31 044005

    [12]

    Zhou H A,Du Z W,Gong K 2005 High Power Laser and Particle Beams 17 1861 (in Chinese) [周怀安、杜正伟、龚 克 2005 强激光与粒子束 17 1861]

  • [1]

    Wunsch D C,Bell R R 1968 IEEE Transactions on Nuclear Science 15 244

    [2]

    Dobykin V D,Kharchenko V V 2006 Journal of Communications Technology and Electronics 51 231

    [3]

    Dobykin V D 2008 Journal of Communications Technology and Electronics 53 100

    [4]

    Wang Y,Jia S,Sun L,Zhang G G,Zhang X,Ji L J 2007 Acta Phys. Sin. 56 7243 (in Chinese) [王 源、贾 嵩、孙 磊、张钢刚、张 兴、吉利久 2007 物理学报 56 7243]

    [5]

    Chai C C,Yang Y T,Zhang B,Leng P,Yang Y,Rao W 2008 Journal of Semiconductors 29 2403 (in Chinese) [柴常春、杨银堂、张 冰、冷 鹏、杨 杨、饶 伟 2008 半导体学报 29 2403]

    [6]

    Chai C C,Yang Y T,Zhang B,Leng P,Yang Y,Rao W 2009 Semiconductor Science and Technology 24 035003

    [7]

    Xi X W,Chai C C,Ren X R,Yang Y T,Zhang B 2009 Proceedings of the 16th IEEE International Symposium on the Physical and Failure Analysis of integrated Circuits,Suzhou,China,July 6—10,2009 p443

    [8]

    Manck O,Engl W L 1975 IEEE Transaction on Electron Device 22 339

    [9]

    Yu W,Cai X H,Huang W H,Liu G Z 1999 High Power Laser and Particle Beams 11 355 (in Chinese) [余 稳、蔡新华、黄文华、刘国治 1999 强激光与粒子束 11 355]

    [10]

    Li P,Fang J Y,Liu G Z,Huang W H 2000 Experiment and Study 23 70 (in Chinese) [李 平、方进勇、刘国治、黄文华 2000 试验与研究 23 70]

    [11]

    Xi X W,Chai C C,Ren X R,Yang Y T,Zhang B,Hong X 2010 Journal of Semiconductors 31 044005

    [12]

    Zhou H A,Du Z W,Gong K 2005 High Power Laser and Particle Beams 17 1861 (in Chinese) [周怀安、杜正伟、龚 克 2005 强激光与粒子束 17 1861]

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出版历程
  • 收稿日期:  2010-02-05
  • 修回日期:  2010-04-03
  • 刊出日期:  2010-11-15

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