搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

负电子亲和势GaN光电阴极的研究进展

付小倩 常本康 李飙 王晓晖 乔建良

引用本文:
Citation:

负电子亲和势GaN光电阴极的研究进展

付小倩, 常本康, 李飙, 王晓晖, 乔建良

Comprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode

Fu Xiao-Qian, Chang Ben-Kang, Li Biao, Wang Xiao-Hui, Qiao Jian-Liang
PDF
导出引用
  • GaN材料由于其优良的性能,成为紫外探测和真空电子源领域极具发展潜力的材料之一;目前制备的反射式GaN光电阴极的量子效率已达到70%以上,透射式也达到了30%.本文对GaN光电阴极的结构设计、表面清洗和Cs/O激活三大方面进行了综述,分析了影响量子效率的关键因素,并对今后可能的发展方向进行了展望.
    GaN is becoming a promising material in ultraviolet detection and vacuum electronic source field for its good performance. High quantum efficiencies of greater than 70% and 30% have been achieved for the opaque mode and transparent mode GaN photocathode, respectively. This paper reviews the progress of GaN photocahtode in three important fields,including structure design, surface cleaning and Cs/O activation, analyzes the key factors influencing the quantum efficiency, and evaluates the prospect for its development.
    • 基金项目: 国家自然科学基金(批准号:60871012)资助的课题.
    [1]

    Uchiiyama S, Takagi Y, Niigaki M, Kan H 2005 Appl. Phys. Lett. 86 103511

    [2]

    Siegmund O,Vallerga J, McPhate J,Malloy J,Tremsin A, Martin A,Ulmer M, Wessels B 2006 Nucl. Instrum. Meth. A 567 89

    [3]

    Leopold D J, Buckley J H,Rebillot P 2005 J. Appl. Phys. 98 043525

    [4]

    Siegmund O, Tremsin A ,Vallerga J, McPhatea J, Hull J, Malloy J, Dabiran A 2008 Proc. SPIE 7021 70211B-1

    [5]

    Siegmund O H W, Tremsin A S, Martin A, Malloy J, Ulmer M, Wessels B 2003 Proc. SPIE 5164 134

    [6]

    Ulmer M P, Wessels B W, Han B, Gregie J, Tremsin A,Siegmund O H W 2003 Proc. SPIE 5164 144

    [7]

    Stock J, Hilton G, Norton T, Woodgate B, Aslam S, Ulmer M 2005 Proc. SPIE 5898 58980F-1

    [8]

    Mizuno I, Nihashi T, Nagai T, Niigaki M, Shimizu Y, Shimano K, Katoh K, Ihara T, Okano K, Matsumoto M, Tachino M 2008 Proc. SPIE 6945 69451N

    [9]

    Fuke S, Sumiy M, Nihashi T, Hagino M, Matsumoto M, Kamo Y, Sato M, Ohtsuka K 2008 Proc. SPIE 6894 68941F-1

    [10]

    Liliental-Weber Z, Jasinski J, Zakharov D N 2004 Opto- Electron. Rev. 12 339

    [11]

    Liang C G, Zhang J 1999 Chin. J.Semi. 20 89 (in Chinese) [梁春广、张 冀 1999 半导体学报 20 89]

    [12]

    Feng Q, Hao Y, Zhang X J, Liu Y L 2004 Acta Phys.Sin. 53 626 (in Chinese) [冯 倩、郝 跃、张晓菊、刘玉龙 2004 物理学报 53 626]

    [13]

    Hu Y F, Beling C D 2005 Chin.Phys. 14 2293

    [14]

    Peng D S, Feng Y C, Wang W X, Liu X F, Shi W, Niu H B 2006 Acta Phys. Sin. 55 3606 (in Chinese) [彭冬生、冯玉春、王文欣、刘晓峰、施 炜、牛憨笨 2006 物理学报 55 3606]

    [15]

    Dikme Y, Gemmern P van,Chai B, Hill D, Szymakowski A, Kalisch H,Heuken M, Jansen R H 2005 Phys. Stat. Sol. (c) 2 2161

    [16]

    Duan S K, Teng X G, Han P D, Lu D C 1998 J. Cryst. Growth 195 304

    [17]

    Doolittle William A, Kang Sangbeom, Brown April 2000 Solid-State Electron. 44 229

    [18]

    Nakamura S 1991 Jpn. J. Appl. Phys. 30 1705

    [19]

    Zou Ju, Liu C X, Zhou S M,Wang J, Zhou J H, Huang T H,Han P, Xie Z L, Zhang R 2006 Chin. Phys. 15 2706

    [20]

    Vispute R D, Talyansky V, Trajanovic Z, Choopun S, Downes M, Sharma R P,Venkatesan T,Woods M C, Lareau R T, Jones K A, Iliadis A A 1997 Appl. Phys. Lett. 70 2735

    [21]

    Sun X W, Xiao R F, Kwok H. S 1998 J. Appl. Phys. 84 5776

    [22]

    Horie M, Ishihara Y, Uamamoto J, Kurimoto M,Takano Tand, Kawanishi H 2002 Phys. Stat. Sol.(a) 192 151

    [23]

    Wu Y X,Zhu J J, Chen G F, Zhang S M, Jiang D S, Liu Z S,Zhao D G, Wang H, Wang Y T, Yang H 2010 Chin. Phys. B 19 036801

    [24]

    Liu Z, Wang X L, Wang J X, Hu G X, Guo L C, Li J M 2007 Chin. Phys. 16 1467

    [25]

    Ding Z B, Yao S D, Wang K, Cheng K 2006 Acta Phys.Sin. 55 2977( in Chinese) [丁志博、姚淑德、王 坤、 程 凯 2006 物理学报 55 2977]

    [26]

    Huang S R, Chen Z 2007 Acta Phys. Sin. 56 4596 (in Chinese) [黄生荣、陈 朝 2007 物理学报 56 4596]

    [27]

    Yang Z, Chang B K, Zou J J, Qiao J L, Gao P, Zeng Y P, Li H 2007 Appl. Opt. 46 7035

    [28]

    Du X Q, Chang B K, Zou J J, Li M 2005 Acta Opt. Sin. 25 1411 (in Chinese) [杜晓晴、常本康、邹继军、李 敏 2005 光学学报 25 1411]

    [29]

    Zhang Y J, Chang B K, Yang Z, Niu J, Xiong Y J, Shi F, Guo H, Zeng Y P 2009 Appl. Opt. 48 1715

    [30]

    Niu J, Yang Z, Chang B K 2009 Chin. Phys. Lett. 26 104202

    [31]

    Niu J, Zhang Y J, Chang B K, Yang Z, XiongY J 2009 Appl. Opt. 48 5445

    [32]

    Zhang Y J, Chang BK, Yang Z,Niu J, Zou J J 2009 Chin. Phys. B 18 4541

    [33]

    Korotkov R Y, Gregie J M, Wessels B W 2002 Opto-Electron. Rev. 10 243

    [34]

    Kipshidze G, Kuryatkov V, Borisov B, Kudryavtsev Yu, Asomoza R, Nikishin S, Temkin H 2002 Appl. Phys. Lett. 80 2910

    [35]

    Pankove J. I, Torvik J. T, Qiu C. H, Grzegory I,Porowski S,Quigley P,Martin B 1999 Appl Phys. Lett. 74 416

    [36]

    Korotkov R Y, Gregie J M, Wessels B W 2001 Appl. Phys. Lett. 78 222

    [37]

    Ploog K ,Brandt O 1998 J. Vac. Sci. Technol. A 16 1609

    [38]

    Wang H B, Liu J P, Niu N H, Shen G D, Zhang S M 2007 J. Cryst. Growth 304 7

    [39]

    Xing Y H, Han J, Liu J P, Niu N H, Deng J, Li T, Shen G D 2008 Vacuum 82 1

    [40]

    Wegscheider M, Simbrunner C, Li T, Jakie R, Navarro-Quezada A, Quast M, Sitter H, Bonanni A 2008 Appl. Surf. Sci. 255 731

    [41]

    Li T, Wang H B,Liu J P, Niu N H, Zhang N G, Xing Y H, Han J, Liu Y, Gao G,Shen G D 2007 Acta Phys. Sin. 56 1036 (in Chinese) [李 彤、王怀兵、刘建平、牛南辉、张念国、邢艳辉、韩 军、刘 莹、高 国、沈光地 2007 物理学报 56 1036]

    [42]

    Zhang J C, Hao Y, Li P X, Fan L, Feng Q 2004 Acta Phys. Sin. 53 1243 (in Chinese) [张进城、郝 跃、李培咸、范 隆、冯 倩 2004 物理学报 53 1243]

    [43]

    Du X Q 2010 Optics and Optoelectronic Technology 8 76 ( in Chinese) [杜晓晴 2010 光学与光电技术 8 76]

    [44]

    Bandic Z Z, Bridger P M, Piquette E C, McGill T C 1998 Appl. Phys. Lett. 73 3276

    [45]

    Kumakura K, Makimoto T, Kobayashi N, Hashizume T, Fukui T, Hasegawa H 2005 Appl. Phys. Lett. 86 052105

    [46]

    Machuca F, Sun Y, Liu Z, Ioakeimidi K, Pianetta P, Pease R F W 2000 J. Vac. Sci. Technol. B 18 3042

    [47]

    Zhou M, Zhao D G 2008 Acta Phys. Sin. 57 4570 (in Chinese) [周 梅、赵德刚 2008 物理学报 57 4570]

    [48]

    Zhou M, Zhao D G 2009 Acta Phys. Sin. 58 7255 (in Chinese) [周 梅、赵德刚 2009 物理学报 58 7255]

    [49]

    Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2002 J. Vac. Sci. Technol. A 20 1784

    [50]

    Smith L L, King S W, Nemanich R J, Davis R. F 1996 J. Electron. Mater. 25 805

    [51]

    Tracy K M, Mecouch W J, Davis R F 2003 J. Appl. Phys. 94 3163

    [52]

    Hunt R W,Vanzettia L, Castroa T, Chen K M, Sorb L, Cohen P I,Gladfelter W, Van Hove J M, Kuznia J N, Asif Khan M, Franciosi A 1993 Physica B 185 415

    [53]

    Lai Y H, Yeh C T, Hwang J M, Hwang H L, Chen C T,Hung W H 2001 J. Phys. Chem. B 105 10029

    [54]

    Fisher D G 1974 IEEE Trans. Electron Devices 21 541

    [55]

    Stocker B J 1975 Surf. Sci. 47 501

    [56]

    Du X Q 2010 Acta Opt. Sin. 37 385 ( in Chinese) [杜晓晴 2010 光学学报 37 385]

    [57]

    Mulhollan G A, Bierman J C U. S. Patent 2009/0322222A1

    [58]

    Zou J J, Chang B K, Du X Q, Chen H L, Wang H, Gao P 2006 Acta Photon. Sin. 35 1493( in Chinese) [邹继军、常本康、杜晓晴、陈怀林、王 惠、高 频 2006 光子学报 35 1493]

    [59]

    Yang Z, Niu J, Qian Y S, Chang B K, Shi F, Zhang Y J, Qiao J L, Xiong Y J, Gao P 2009 Chin. J. Vac. Sci. Technol. 29 669 (in Chinese) [杨 智、牛 军、钱芸生、常本康、石 峰、张益军、乔建良、熊雅娟、高 频 2009 真空科学与技术学报 29 669]

    [60]

    Machuca F 2003 Ph. D. Dissertation ( Stanford:Stanford University) p83

    [61]

    Wu C I ,Kahn A 2000 Appl. Surf. Sci. 162 250

    [62]

    Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 855 (in Chinese) [乔建良、常本康、杜晓晴、牛 军、 邹继军 2010 物理学报 59 855] [63] Madelung O 1991 Data in Science and Technology: Semiconductors-Group Ⅳ Elements and Ⅲ-Ⅴ Compounds (Berlin:Springer)p5—150

    [63]

    Wang R Z, Wang B, Wang H, Zhou H, Huang A P,Zhu M K,Yan H, Yan X H 2002 Appl. Phys. Lett. 81 2782

    [64]

    LiuY Z, Wang Z C, Dong Y Q 1995 Electronic emission and photocathode ( Beijing: Beijing Institue of Technology Press) p310 ( in Chinese) [刘元震、王仲春、董亚强 1995 电子发射与光电阴极 (北京: 北京理工大学出版社) 第310页]

  • [1]

    Uchiiyama S, Takagi Y, Niigaki M, Kan H 2005 Appl. Phys. Lett. 86 103511

    [2]

    Siegmund O,Vallerga J, McPhate J,Malloy J,Tremsin A, Martin A,Ulmer M, Wessels B 2006 Nucl. Instrum. Meth. A 567 89

    [3]

    Leopold D J, Buckley J H,Rebillot P 2005 J. Appl. Phys. 98 043525

    [4]

    Siegmund O, Tremsin A ,Vallerga J, McPhatea J, Hull J, Malloy J, Dabiran A 2008 Proc. SPIE 7021 70211B-1

    [5]

    Siegmund O H W, Tremsin A S, Martin A, Malloy J, Ulmer M, Wessels B 2003 Proc. SPIE 5164 134

    [6]

    Ulmer M P, Wessels B W, Han B, Gregie J, Tremsin A,Siegmund O H W 2003 Proc. SPIE 5164 144

    [7]

    Stock J, Hilton G, Norton T, Woodgate B, Aslam S, Ulmer M 2005 Proc. SPIE 5898 58980F-1

    [8]

    Mizuno I, Nihashi T, Nagai T, Niigaki M, Shimizu Y, Shimano K, Katoh K, Ihara T, Okano K, Matsumoto M, Tachino M 2008 Proc. SPIE 6945 69451N

    [9]

    Fuke S, Sumiy M, Nihashi T, Hagino M, Matsumoto M, Kamo Y, Sato M, Ohtsuka K 2008 Proc. SPIE 6894 68941F-1

    [10]

    Liliental-Weber Z, Jasinski J, Zakharov D N 2004 Opto- Electron. Rev. 12 339

    [11]

    Liang C G, Zhang J 1999 Chin. J.Semi. 20 89 (in Chinese) [梁春广、张 冀 1999 半导体学报 20 89]

    [12]

    Feng Q, Hao Y, Zhang X J, Liu Y L 2004 Acta Phys.Sin. 53 626 (in Chinese) [冯 倩、郝 跃、张晓菊、刘玉龙 2004 物理学报 53 626]

    [13]

    Hu Y F, Beling C D 2005 Chin.Phys. 14 2293

    [14]

    Peng D S, Feng Y C, Wang W X, Liu X F, Shi W, Niu H B 2006 Acta Phys. Sin. 55 3606 (in Chinese) [彭冬生、冯玉春、王文欣、刘晓峰、施 炜、牛憨笨 2006 物理学报 55 3606]

    [15]

    Dikme Y, Gemmern P van,Chai B, Hill D, Szymakowski A, Kalisch H,Heuken M, Jansen R H 2005 Phys. Stat. Sol. (c) 2 2161

    [16]

    Duan S K, Teng X G, Han P D, Lu D C 1998 J. Cryst. Growth 195 304

    [17]

    Doolittle William A, Kang Sangbeom, Brown April 2000 Solid-State Electron. 44 229

    [18]

    Nakamura S 1991 Jpn. J. Appl. Phys. 30 1705

    [19]

    Zou Ju, Liu C X, Zhou S M,Wang J, Zhou J H, Huang T H,Han P, Xie Z L, Zhang R 2006 Chin. Phys. 15 2706

    [20]

    Vispute R D, Talyansky V, Trajanovic Z, Choopun S, Downes M, Sharma R P,Venkatesan T,Woods M C, Lareau R T, Jones K A, Iliadis A A 1997 Appl. Phys. Lett. 70 2735

    [21]

    Sun X W, Xiao R F, Kwok H. S 1998 J. Appl. Phys. 84 5776

    [22]

    Horie M, Ishihara Y, Uamamoto J, Kurimoto M,Takano Tand, Kawanishi H 2002 Phys. Stat. Sol.(a) 192 151

    [23]

    Wu Y X,Zhu J J, Chen G F, Zhang S M, Jiang D S, Liu Z S,Zhao D G, Wang H, Wang Y T, Yang H 2010 Chin. Phys. B 19 036801

    [24]

    Liu Z, Wang X L, Wang J X, Hu G X, Guo L C, Li J M 2007 Chin. Phys. 16 1467

    [25]

    Ding Z B, Yao S D, Wang K, Cheng K 2006 Acta Phys.Sin. 55 2977( in Chinese) [丁志博、姚淑德、王 坤、 程 凯 2006 物理学报 55 2977]

    [26]

    Huang S R, Chen Z 2007 Acta Phys. Sin. 56 4596 (in Chinese) [黄生荣、陈 朝 2007 物理学报 56 4596]

    [27]

    Yang Z, Chang B K, Zou J J, Qiao J L, Gao P, Zeng Y P, Li H 2007 Appl. Opt. 46 7035

    [28]

    Du X Q, Chang B K, Zou J J, Li M 2005 Acta Opt. Sin. 25 1411 (in Chinese) [杜晓晴、常本康、邹继军、李 敏 2005 光学学报 25 1411]

    [29]

    Zhang Y J, Chang B K, Yang Z, Niu J, Xiong Y J, Shi F, Guo H, Zeng Y P 2009 Appl. Opt. 48 1715

    [30]

    Niu J, Yang Z, Chang B K 2009 Chin. Phys. Lett. 26 104202

    [31]

    Niu J, Zhang Y J, Chang B K, Yang Z, XiongY J 2009 Appl. Opt. 48 5445

    [32]

    Zhang Y J, Chang BK, Yang Z,Niu J, Zou J J 2009 Chin. Phys. B 18 4541

    [33]

    Korotkov R Y, Gregie J M, Wessels B W 2002 Opto-Electron. Rev. 10 243

    [34]

    Kipshidze G, Kuryatkov V, Borisov B, Kudryavtsev Yu, Asomoza R, Nikishin S, Temkin H 2002 Appl. Phys. Lett. 80 2910

    [35]

    Pankove J. I, Torvik J. T, Qiu C. H, Grzegory I,Porowski S,Quigley P,Martin B 1999 Appl Phys. Lett. 74 416

    [36]

    Korotkov R Y, Gregie J M, Wessels B W 2001 Appl. Phys. Lett. 78 222

    [37]

    Ploog K ,Brandt O 1998 J. Vac. Sci. Technol. A 16 1609

    [38]

    Wang H B, Liu J P, Niu N H, Shen G D, Zhang S M 2007 J. Cryst. Growth 304 7

    [39]

    Xing Y H, Han J, Liu J P, Niu N H, Deng J, Li T, Shen G D 2008 Vacuum 82 1

    [40]

    Wegscheider M, Simbrunner C, Li T, Jakie R, Navarro-Quezada A, Quast M, Sitter H, Bonanni A 2008 Appl. Surf. Sci. 255 731

    [41]

    Li T, Wang H B,Liu J P, Niu N H, Zhang N G, Xing Y H, Han J, Liu Y, Gao G,Shen G D 2007 Acta Phys. Sin. 56 1036 (in Chinese) [李 彤、王怀兵、刘建平、牛南辉、张念国、邢艳辉、韩 军、刘 莹、高 国、沈光地 2007 物理学报 56 1036]

    [42]

    Zhang J C, Hao Y, Li P X, Fan L, Feng Q 2004 Acta Phys. Sin. 53 1243 (in Chinese) [张进城、郝 跃、李培咸、范 隆、冯 倩 2004 物理学报 53 1243]

    [43]

    Du X Q 2010 Optics and Optoelectronic Technology 8 76 ( in Chinese) [杜晓晴 2010 光学与光电技术 8 76]

    [44]

    Bandic Z Z, Bridger P M, Piquette E C, McGill T C 1998 Appl. Phys. Lett. 73 3276

    [45]

    Kumakura K, Makimoto T, Kobayashi N, Hashizume T, Fukui T, Hasegawa H 2005 Appl. Phys. Lett. 86 052105

    [46]

    Machuca F, Sun Y, Liu Z, Ioakeimidi K, Pianetta P, Pease R F W 2000 J. Vac. Sci. Technol. B 18 3042

    [47]

    Zhou M, Zhao D G 2008 Acta Phys. Sin. 57 4570 (in Chinese) [周 梅、赵德刚 2008 物理学报 57 4570]

    [48]

    Zhou M, Zhao D G 2009 Acta Phys. Sin. 58 7255 (in Chinese) [周 梅、赵德刚 2009 物理学报 58 7255]

    [49]

    Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2002 J. Vac. Sci. Technol. A 20 1784

    [50]

    Smith L L, King S W, Nemanich R J, Davis R. F 1996 J. Electron. Mater. 25 805

    [51]

    Tracy K M, Mecouch W J, Davis R F 2003 J. Appl. Phys. 94 3163

    [52]

    Hunt R W,Vanzettia L, Castroa T, Chen K M, Sorb L, Cohen P I,Gladfelter W, Van Hove J M, Kuznia J N, Asif Khan M, Franciosi A 1993 Physica B 185 415

    [53]

    Lai Y H, Yeh C T, Hwang J M, Hwang H L, Chen C T,Hung W H 2001 J. Phys. Chem. B 105 10029

    [54]

    Fisher D G 1974 IEEE Trans. Electron Devices 21 541

    [55]

    Stocker B J 1975 Surf. Sci. 47 501

    [56]

    Du X Q 2010 Acta Opt. Sin. 37 385 ( in Chinese) [杜晓晴 2010 光学学报 37 385]

    [57]

    Mulhollan G A, Bierman J C U. S. Patent 2009/0322222A1

    [58]

    Zou J J, Chang B K, Du X Q, Chen H L, Wang H, Gao P 2006 Acta Photon. Sin. 35 1493( in Chinese) [邹继军、常本康、杜晓晴、陈怀林、王 惠、高 频 2006 光子学报 35 1493]

    [59]

    Yang Z, Niu J, Qian Y S, Chang B K, Shi F, Zhang Y J, Qiao J L, Xiong Y J, Gao P 2009 Chin. J. Vac. Sci. Technol. 29 669 (in Chinese) [杨 智、牛 军、钱芸生、常本康、石 峰、张益军、乔建良、熊雅娟、高 频 2009 真空科学与技术学报 29 669]

    [60]

    Machuca F 2003 Ph. D. Dissertation ( Stanford:Stanford University) p83

    [61]

    Wu C I ,Kahn A 2000 Appl. Surf. Sci. 162 250

    [62]

    Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 855 (in Chinese) [乔建良、常本康、杜晓晴、牛 军、 邹继军 2010 物理学报 59 855] [63] Madelung O 1991 Data in Science and Technology: Semiconductors-Group Ⅳ Elements and Ⅲ-Ⅴ Compounds (Berlin:Springer)p5—150

    [63]

    Wang R Z, Wang B, Wang H, Zhou H, Huang A P,Zhu M K,Yan H, Yan X H 2002 Appl. Phys. Lett. 81 2782

    [64]

    LiuY Z, Wang Z C, Dong Y Q 1995 Electronic emission and photocathode ( Beijing: Beijing Institue of Technology Press) p310 ( in Chinese) [刘元震、王仲春、董亚强 1995 电子发射与光电阴极 (北京: 北京理工大学出版社) 第310页]

  • [1] 李旭东, 姜增公, 顾强, 张猛, 林国强, 赵明华, 郭力. 基于制备成功率和量子效率提升的Te断续、Cs持续沉积制备Cs-Te光阴极. 物理学报, 2022, 71(17): 178501. doi: 10.7498/aps.71.20220818
    [2] 王国建, 刘燕文, 李芬, 田宏, 朱虹, 李云, 赵恒邦, 王小霞, 张志强. 离子束表面处理对光电阴极发射的影响. 物理学报, 2021, 70(21): 218503. doi: 10.7498/aps.70.20210587
    [3] 乔建良, 徐源, 高有堂, 牛军, 常本康. 反射式变掺杂负电子亲和势GaN光电阴极量子效率研究. 物理学报, 2017, 66(6): 067903. doi: 10.7498/aps.66.067903
    [4] 於黄忠. 有机共混结构叠层太阳电池的研究进展. 物理学报, 2013, 62(2): 027201. doi: 10.7498/aps.62.027201
    [5] 蔡志鹏, 杨文正, 唐伟东, 侯洵. 大梯度指数掺杂透射式GaAs光电阴极响应特性的理论分析. 物理学报, 2012, 61(18): 187901. doi: 10.7498/aps.61.187901
    [6] 杨永富, 富容国, 张益军, 王晓晖, 邹继军. GaN光电阴极表面势垒对电子逸出几率的影响. 物理学报, 2012, 61(6): 068501. doi: 10.7498/aps.61.068501
    [7] 杨永富, 富容国, 马力, 王晓晖, 张益军. 反射式GaN光电阴极表面势垒对量子效率衰减的影响. 物理学报, 2012, 61(12): 128504. doi: 10.7498/aps.61.128504
    [8] 王晓晖, 常本康, 钱芸生, 高频, 张益军, 郭向阳, 杜晓晴. 梯度掺杂与均匀掺杂GaN光电阴极的对比研究. 物理学报, 2011, 60(4): 047901. doi: 10.7498/aps.60.047901
    [9] 张益军, 牛军, 赵静, 邹继军, 常本康. 指数掺杂结构对透射式GaAs光电阴极量子效率的影响研究. 物理学报, 2011, 60(6): 067301. doi: 10.7498/aps.60.067301
    [10] 赵静, 张益军, 常本康, 熊雅娟, 张俊举, 石峰, 程宏昌, 崔东旭. 高性能透射式GaAs光电阴极量子效率拟合与结构研究. 物理学报, 2011, 60(10): 107802. doi: 10.7498/aps.60.107802
    [11] 王晓晖, 常本康, 钱芸生, 高频, 张益军, 乔建良, 杜晓晴. 透射式负电子亲和势GaN光电阴极的光谱响应研究. 物理学报, 2011, 60(5): 057902. doi: 10.7498/aps.60.057902
    [12] 郭向阳, 常本康, 王晓晖, 张益军, 杨铭. 反射式负电子亲和势GaN光电阴极的光电发射及稳定性研究. 物理学报, 2011, 60(5): 058101. doi: 10.7498/aps.60.058101
    [13] 乔建良, 常本康, 钱芸生, 杜晓晴, 王晓晖, 郭向阳. 反射式NEA GaN光电阴极量子效率恢复研究. 物理学报, 2011, 60(1): 017903. doi: 10.7498/aps.60.017903
    [14] 乔建良, 常本康, 钱芸生, 杜晓晴, 张益军, 高频, 王晓晖, 郭向阳, 牛军, 高有堂. 负电子亲和势GaN光电阴极光谱响应特性研究. 物理学报, 2010, 59(5): 3577-3582. doi: 10.7498/aps.59.3577
    [15] 乔建良, 常本康, 杜晓晴, 牛军, 邹继军. 反射式负电子亲和势GaN光电阴极量子效率衰减机理研究. 物理学报, 2010, 59(4): 2855-2859. doi: 10.7498/aps.59.2855
    [16] 牛军, 杨智, 常本康, 乔建良, 张益军. 反射式变掺杂GaAs光电阴极量子效率模型研究. 物理学报, 2009, 58(7): 5002-5006. doi: 10.7498/aps.58.5002
    [17] 杜晓晴, 常本康. 负电子亲和势光电阴极量子效率公式的修正. 物理学报, 2009, 58(12): 8643-8650. doi: 10.7498/aps.58.8643
    [18] 乔建良, 田思, 常本康, 杜晓晴, 高频. 负电子亲和势GaN光电阴极激活机理研究. 物理学报, 2009, 58(8): 5847-5851. doi: 10.7498/aps.58.5847
    [19] 邹继军, 常本康, 杨 智, 高 频, 乔建良, 曾一平. GaAs光电阴极在不同强度光照下的稳定性. 物理学报, 2007, 56(10): 6109-6113. doi: 10.7498/aps.56.6109
    [20] 邹继军, 常本康, 杨 智. 指数掺杂GaAs光电阴极量子效率的理论计算. 物理学报, 2007, 56(5): 2992-2997. doi: 10.7498/aps.56.2992
计量
  • 文章访问数:  9462
  • PDF下载量:  926
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-05-22
  • 修回日期:  2010-07-09
  • 刊出日期:  2011-03-15

/

返回文章
返回