非晶钛酸锶钡薄膜的金属有机分解法制备及其光学性能

彭静; 徐智谋; 王双保; 董泽华

doi:10.7498/aps.60.057702

摘要

本文采用2-辛酸钡(Ba(C8H15O2)2)和3-甲基丁基醋酸盐(CH3COOC2H4CH(CH3)2-)为基的特殊前驱体溶液,在硅和石英基片上低温制备Ba0.7Sr0.3TiO3 (BST0.7)薄膜.性能测试结果表明,厚度约为214 nm的非晶BST0.7薄膜的光学带隙能和折射率分别为4.27 eV和n=1.94.薄膜在可见光和近红外区域的消光系数远远低于多晶BST薄膜,约为10-3数量级.激发波长为450 nm时,在室温环境下非晶BST0.7薄膜在波长520—610 nm处发出强烈的可见光,峰值为540—570 nm,而结晶态的BST0.7薄膜则无发光现象.

关键词:

Abstract

With the development of Si-based optical integrated circuit, much attention has been paid to the crystalline and amorphous (BaxSr1-x)TiO3(BST) films due to its good optical properties. In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown on the fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure from barium 2-caprylate Ba(C8H15O2)2 and 3-methylbutyl acetate CH3COOC2H4CH(CH3)2-based special precursors. The optical constants of amorphous BST0.7 thin films including refractive index, extinction coefficient and optical band gap energies were presented. Photoluminescence spectra of BST0.7 films were also observed. The calculated extinction coefficient of 214-nm-thick amorphous BST0.7 thin films in visible and near-infrared region was of the order of 10-3, which is much lower than that of polycrystalline BST thin films. The optical band gap energy and refractive index n were estimated to be about 4.27 eV and n=1.94, respectively. Intensive photoluminescence at room temperature was achieved in the 520 to 610 nm wavelength range with a strong visible peak at 540—570 nm when excited by 450 nm laser light. No photoluminescence was observed in crystalline BST0.7 thin films.

Keywords:

作者及机构信息

(1)华中科技大学化学与化工学院,武汉 430074; (2)武汉光电国家实验室,武汉 430074;华中科技大学光电子科学与工程学院,武汉 430074; (3)武汉科技大学理学院,武汉 430081

基金项目: 国家自然科学基金(批准号:60607006,61076402),教育部留学回国基金(批准号:20081667),湖北省自然科学基金(批准号:2007ABA058)资助的课题.

Authors and contacts

(1)College of Sciences, Wuhan University of Science and Technology, Wuhan 430081, China; (2)School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China; (3)Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China; College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

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[31]	Tchelbou F, Ryu H S, Hong C K, Park W S, Balk S 1997 Thin Solid Films 299 14
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施引文献

[1]	Kip D 1998 Appl. Phys. B 67 131
[2]	Liu Y, Nagra A S, Erker E G, Periiaswamy P, Taylor T R, Speck J, York R A 2000 IEEE Microw. Guided Wave Lett. 10 448
[3]	Rao J B L, Patel D P, Krichevsky V 1999 IEEE Trans. Antennas Propog. 47 458
[4]	Noren B, 2004 Microw. J. 47 210
[5]	Sekhar M C 2004 Mod. J. Phys. B 8 2153
[6]	Kozyrev A, Ivanov A, Keis V, Khazov M, Osadchy V, Samoilova T, Soldatenkov O, Pavlov A, Koepf G, Mueller C, Galt D, Rivkin T 1998 IEEE MTT-S Int. Microw. Symp. Dig. 2 985
[7]	Kim D Y, Moon S E, Kim E K, Korean J 2003 Phys. Soc. 42 1347
[8]	Kim D Y, Moon S E, Kim E K, Lee S J, Choi J J, Kim H E 2003 Appl. Phys. Lett. 82 1455
[9]	Xu Z M, Yuichiro Tanushi, Masato Suzuki, Shin Yokoyama 2006 Appl. Phys. Lett. 88 161107
[10]	Auciello O, Saha S, Kaufman D Y 2004 J. Electroceram. 12 119
[11]	Saha S, Krupanidhi S B 2000 J. Appl. Phys. 87 849
[12]	Wang D Y, Mak C L, Wong K H 2004 Ceram. Int. 30 1745
[13]	Thielsch R, Kaemmer K, Holzapfel B 1997 Thin Solid Films 301 203
[14]	Regnery S, Ehrhart P, Szot K 2003 Integr. Ferroelectr. 57 1175
[15]	Roy S C, Sharma G L, Bhatnagar M C 2004 Appl. Surf. Sci. 236 306
[16]	Chen S Y, Wang H W, Huang L C 2002 Mater. Chem. Phys. 77 632
[17]	Tahan D M, Safari A, Klein L C 1996 J. Am. Ceram. Soc. 6 1593
[18]	Jana P, Pandey R K 1997 Intergr. Ferroelec. 17 153
[19]	Neumayer D A, Duncombe P R, Laibowitz R B, Grill A 1997 Intergr. Ferroelec. 18 297
[20]	Zhu W, Tan O K, Deng J, Oh J T 2000 J. Mater. Res. 15 1291
[21]	Kim T G, Oh J, Kim Y, Moon T, Hong K S, Parky B 2003 Jpn. J. Appl.Phys. 42 1315
[22]	Melo D M A, Cesar A, Martinelli A E, Silva Z R, Leite E R, Longo E, Pizanni P S 2004 J. Solid State Chem. 177 670
[23]	Pontes F M, Leite E R, Pontes D S L, Longo E 2002 J. Appl. Phys. 91 5972
[24]	Manifacier J C, Gasiot J, Fillard J P 1976 J. Phys. E, Sci. Instrum. 9 1002
[25]	Swanepoel R 1983 J. Phys. E, Sci. Instrum. 16 1214
[26]	Panda B, Dhar A, Nigam G D, Bhattacharya D, Ray S K 1998 Thin Solid Films 332 46
[27]	Bao D, Yao X, Wakiya N, Shinozaki K, Mizutani N 2001 Appl. Phys. Lett. 79 3767
[28]	Tauc J C 1974 Amorphous and Liquid Semiconductor (New York:Plenum Press)
[29]	Tauc J C 1972 Optical Properties of Solids (North-Holland:Amsterdam)
[30]	Wang Y P, Tseng T Y 1999 J. Mater. Sci. 34 4573
[31]	Tchelbou F, Ryu H S, Hong C K, Park W S, Balk S 1997 Thin Solid Films 299 14
[32]	Xu Z M, Suzuki M, Yokoyama S 2005 Jpn. J. Appl. Phys. 44 8507
[33]	Hodes G, Yaron A A, Decker F, Motisuka P 1987 Phys. Rev. B 36 4215
[34]	Chopra K L, Paulson P D, Dutta V 2004 Prog. Photovolt. Res. Appl. 12 69

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