量子阱数量变化对双波长LED作用的研究

张运炎; 范广涵

doi:10.7498/aps.60.078504

摘要

采用软件理论分析的方法分析了InGaN/GaN量子阱数量变化对双波长发光二极管发光光谱、内量子效率、电子空穴浓度分布、溢出电流等产生的影响.分析结果表明,量子阱数量的增加会引起载流子分配不均的现象,所以量子阱数量的增加并不能有效地提升载流子复合率、内量子效率和发光强度,还会引起开启电压升高的现象,影响能量转化效率.此外,不同发光波长的量子阱数量的增加会引起发光光谱强度的变化.

关键词:

A two-dimensional simulation of electrical and optical characteristics of the dual-wavelength LED with different numbers of quantum wells is conducted with APSYS software. The results show that the increase of the number of quantum wells will cause uneven distribution of hole concentrations. Therefore, the increase in the number of quantum wells cannot effectively enhance carrier recombination rate, internal quantum efficiency and luminous intensity. Furthermore, it will lead to the rising of threshold voltage and affect the energy conversion efficiency.

Keywords:

作者及机构信息

1.
华南师范大学光电子材料与技术研究所,广州 510631

基金项目: 2009年省部产学研结合引导项目(批准号:2009B090300338),粤港关键领域重点突破项目(批准号:2007A010501008),教育部博士点基金(批准号: 350163)和2010年省部产学研结合引导项目(批准号: 2010B090400192)资助的课题.

Authors and contacts

1.
Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631,Chian

参考文献

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[2]	Chen C H, Chang S J, Su Y K, Sheu J K, Chen J F, Kuo C H, Lin Y C 2002 IEEE Photon. Technol. Lett. 14 2532
[3]	Li Y, Zheng R S, Feng Y C, Liu S H, Niu H B 2006 Chin. Phys. 15 702
[4]	Shao J P, Hu H, Guo W P, Wang L, Luo Y, Sun C Z, Hao Z B 2005 Acta Phys. Sin. 54 3905(in Chinese)[邵嘉平、胡卉、郭文平、汪莱、罗毅、孙长征、郝智彪 2005 物理学报 54 3905]
[5]	Zheng D S, Qian K Y, Luo Y 2005 Semiconductor Optoelectronics 26 87
[6]	Shen G D, Zhang N G, Liu J P, Niu N H, Li T, Xing Y H, Lin Q M, Guo X 2007 Semiconductor Optoelectronics 28 349
[7]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[8]	Qi Y D, Liang H, Tang W, Lu Z D, Kei May Lau 2004 Journal of Crystal Growth 272 333
[9]	Damilano B, Grandjean N, Pernot C, Massies J 2001 J. Appl. Phys. 40 918
[10]	Li Y L, Gessmann T H 2003 J. Appl. Phys. 94 2167
[11]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[12]	Chen H S, Yeh D M, Lu C F 2006 IEEE Photon. Technol. Lett. 18 1430
[13]	Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[14]	Chuang S L, Chang C S 1997 Semicond. Sci. and Technol. 12 252
[15]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[16]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[17]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[18]	Fiorentini V, Bernardini F, Ambacher O 2002 App. Phys. Lett. 80 1204

施引文献

[1]	Sheu J K, Chang S J, Kuo C H, Su Y K, Wu L W, Lin Y C, Lai W C, Tsai J M, Chi G C, Wu R K 2003 IEEE Photon. Technol. Lett. 15 18
[2]	Chen C H, Chang S J, Su Y K, Sheu J K, Chen J F, Kuo C H, Lin Y C 2002 IEEE Photon. Technol. Lett. 14 2532
[3]	Li Y, Zheng R S, Feng Y C, Liu S H, Niu H B 2006 Chin. Phys. 15 702
[4]	Shao J P, Hu H, Guo W P, Wang L, Luo Y, Sun C Z, Hao Z B 2005 Acta Phys. Sin. 54 3905(in Chinese)[邵嘉平、胡卉、郭文平、汪莱、罗毅、孙长征、郝智彪 2005 物理学报 54 3905]
[5]	Zheng D S, Qian K Y, Luo Y 2005 Semiconductor Optoelectronics 26 87
[6]	Shen G D, Zhang N G, Liu J P, Niu N H, Li T, Xing Y H, Lin Q M, Guo X 2007 Semiconductor Optoelectronics 28 349
[7]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[8]	Qi Y D, Liang H, Tang W, Lu Z D, Kei May Lau 2004 Journal of Crystal Growth 272 333
[9]	Damilano B, Grandjean N, Pernot C, Massies J 2001 J. Appl. Phys. 40 918
[10]	Li Y L, Gessmann T H 2003 J. Appl. Phys. 94 2167
[11]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[12]	Chen H S, Yeh D M, Lu C F 2006 IEEE Photon. Technol. Lett. 18 1430
[13]	Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[14]	Chuang S L, Chang C S 1997 Semicond. Sci. and Technol. 12 252
[15]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[16]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[17]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[18]	Fiorentini V, Bernardini F, Ambacher O 2002 App. Phys. Lett. 80 1204

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