位移损伤剂量法评估空间GaAs/Ge太阳电池辐照损伤过程

吴宜勇; 岳龙; 胡建民; 蓝慕杰; 肖景东; 杨德庄; 何世禹; 张忠卫; 王训春; 钱勇; 陈鸣波

doi:10.7498/aps.60.098110

摘要

本文针对GaAs/Ge太阳电池,利用位移损伤剂量法研究了其在轨服役条件下的性能退化行为.首先在地面模拟辐照环境中,试验获得了在不同能量的电子和质子辐照下的电池性能随辐照注量的退化行为.基于上述实验结果以及计算获得的带电粒子在电池中的非电离能量损失(NIEL)获得了不同能量电子辐照位移损伤的等效指数n为1.7,电子损伤剂量转化为质子损伤剂量等效系数为5.2,并进一步建立了电池性能随位移损伤剂量的退化方程.利用该方法对国产GaAs/Ge太阳电池在500,22000和36000 km轨道带电粒子辐

关键词:

Abstract

In this paper,the degradation of irradiated GaAs/Ge single junction (SJ) solar cells is evaluated under the orbital environments using the displacement damage dose method. Firstly the electric-property changes of the SJ solar cells are experimentally obtained with the fluencies of electrons and protons of various energies under ground-based irradiation simulators. Based on the experimenal results and the calculated non-ionization energy losses (NIELs) of the electrons and protons in GaAs, the equivalent exponent n is obtained to be 1.7 for various electron energies,while the equivalent coefficient Rep for electron displacement damage converted into that of protons is 5.2. Furthermore, a degradation formula of the electrical property of the domestic SJ solar cell is established as a function of displacement damage dose during the particle irradiation. Using the displacement damage technique, the orbital evolution of the electric property degradation of the domestic SJ cell is predicted in this paper. In the meantime, the shielding effects of the cover glass with different thicknesses are also evaluated.

Keywords:

作者及机构信息

(1)哈尔滨工业大学材料科学与工程学院,哈尔滨 150001; (2)哈尔滨工业大学航天学院,哈尔滨 150001; (3)哈尔滨师范大学物理与电子工程学院,哈尔滨 150025; (4)上海空间电源研究所,上海 200233

基金项目: 国家自然科学基金(批准号:11075043)资助的课题.

Authors and contacts

(1)Harbin Institute of Technology,School of Astronautics, Harbin 150001, China; (2)Harbin Institute of Technology,School of Material Science and Engineering,Harbin 150001, China; (3)Harbin Normal University,School of Physics and Electronic Engineering,Harbin 150001, China; (4)Shanghai Institute of Space Power-sources, Shanghai 200233, China

参考文献

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[2]	de Angelis N, Bourgoin J C, Takamoto T, Khan A, Yamaguchi M 2001 Sol.Energy Mater. Sol. Cells 66 495
[3]	Haapamaa J, Pessa M, Roche G La 2001 Sol.Energy Mater.Sol.Cells 66 573
[4]	Li B, Xiang X B, You Z P, Xu Y, Fei X Y, Liao X B 1996 Sol. Energy Mater. Sol. Cells 44 63
[5]	Bougoin J C, de Angelis N 2001 Sol. Energy Mater. Sol. Cells 66 467
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[24]	Summers G P, Messenger S R, Burke E A, Xapsos M A, Walters R J 1997 Progr. Photovoltaics Res. Applicat. 5 407
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[27]	Feynman J, Spitale G, Wang J, Gabriel S 1993 J. Geophys. Res. 98 281
[28]	Mayer P, Ramaty R, Webber W R 1974 Phys. Today 27 23
[29]	Takamoto T, Okazaki H, Takamura H, Ohmori M, Ura M, Yamaguchi M 1990 Indium Phosphide and Related Materials, 1990. Second International Conference Denver Apr 23—25 1990 p62—65

施引文献

[1]	Anspaugh B E 1996 GaAs Solar Cell Radiation Handbook (Pasadena:JPL Publication) p 1—2
[2]	de Angelis N, Bourgoin J C, Takamoto T, Khan A, Yamaguchi M 2001 Sol.Energy Mater. Sol. Cells 66 495
[3]	Haapamaa J, Pessa M, Roche G La 2001 Sol.Energy Mater.Sol.Cells 66 573
[4]	Li B, Xiang X B, You Z P, Xu Y, Fei X Y, Liao X B 1996 Sol. Energy Mater. Sol. Cells 44 63
[5]	Bougoin J C, de Angelis N 2001 Sol. Energy Mater. Sol. Cells 66 467
[6]	Zhang Z W,Lu J F,Chi W Y,Wang L X,Cheng M B 2003 Aerospace Shanghai 3 33 (in Chinese)[张忠卫、陆剑锋、池卫英、王亮兴、陈鸣波 2003上海航天 3 33]
[7]	Chen T J 1997 Semicond. Optoelectronics 18 56(in Chinese) [陈庭金 1997 半导体光电 18 56]
[8]	Shi X Z,Li S Q,Yan H P,Ding D H 1995 Semicond. Optoelectronics 16 313(in Chinese)[施小忠、李世清、鄢和平、丁棣华 1995半导体光电 16 313]
[9]	Wang R,Zhang X H,Guo Z L 2003 Nucl. Techni. 26(6) 1(in Chinese)[王荣、张新辉、郭增良 2003核技术 26(6) 1]
[10]	Sheila G, Bailey, Dennis J, Flood 1998 Progr. Photovoltaics Res. Applicat 6 1
[11]	Robert Y, Loo G, Sanjiv K, Sheng S L 1990 IEEE Trans. Electr. Dev. 37 485
[12]	Ewan J, Kamath G S, Knechtli R C 1975 Proceedings of the 11th IEEE Photovoltaic Specialists Conference New York May 6—8 p509
[13]	Michel R, Philippe A 1985 J. Appl. Phys. 57 5192
[14]	Hu J M, Wu Y Y, Zhang Z W, Yang D Z, He S Y 2008 Nucl. Instrum. Methods Phys. Res. B 266 267
[15]	Hu J M, Wu Y Y, Yang D Z, He S Y 2008 Nucl. Instrum. Methods Phys. Res. B 266 3577
[16]	Zhao H J, He S Y, Sun Y Z, Sun Q, Xiao Z B, Lv W, Huang C Y, Xiao J D, Wu Y Y 2009 Acta. Phys. Sin. 58 404 (in Chinese)[赵慧杰、何世禹、孙彦铮、孙强、肖志斌、吕伟、黄才勇、肖景东、吴宜勇 2009 物理学报 58 404]
[17]	Summers G P,Messenger S A, Walters R J, Burke E A 2001 Progr. Photovoltaics Res. Applicat. 9 103
[18]	Chen P X 2005 Radiation effects on semiconductor devices and integrated circuits (Beijing:Natioal Defence Industry Press) p28—37(in Chinese)[陈盘训2005半导体器件和集成电路的辐射效应(北京:国防工业出版社) 第28—37页]
[19]	Cao J Z 1993 Radiation effects in material of semiconductor (Beijing:Science Press) p 25—43(in Chinese)[曹建中 1993 半导体材料的辐照效应 (北京:科学出版社)第25—43 页]
[20]	Messenger S R, Burke E A, Morton T L, Summers G P, Walters R J, Warner J H 2003 3rd World Conference on Photovoltaic Energy Conversion Osaka, Japan May 11—18, 2003 p716—719
[21]	Morton T L, Chock R, Long K J, Bailey S, Messenger S R, Walters R J, Summers G P 1999 Progr. Photovoltaics Res. Applicat. 7 228
[22]	Anspaugh B E 1991 Proceedings of the 22nd IEEE Photovoltaic Spacialist Conference Las Vegas,1991 p1593—1598
[23]	Summers G P, Messenger S R, Burke E A,Xapsos M A,Walters R J 1997 Appl. Phys. Lett. 71 832
[24]	Summers G P, Messenger S R, Burke E A, Xapsos M A, Walters R J 1997 Progr. Photovoltaics Res. Applicat. 5 407
[25]	Sawyer D M, Vette J I 1976 NSSDC/ WDC-A-R&S 76-06
[26]	Vette J I 1991 NSSDC/WDC-A-R&S 91-24
[27]	Feynman J, Spitale G, Wang J, Gabriel S 1993 J. Geophys. Res. 98 281
[28]	Mayer P, Ramaty R, Webber W R 1974 Phys. Today 27 23
[29]	Takamoto T, Okazaki H, Takamura H, Ohmori M, Ura M, Yamaguchi M 1990 Indium Phosphide and Related Materials, 1990. Second International Conference Denver Apr 23—25 1990 p62—65

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