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采用等离子体辉光放电聚合技术,在不同四甲基硅烷(TMS)流量条件下制备了硅掺杂辉光放电聚合物(Si-GDP)薄膜,采用傅里叶变换红外光谱、X射线光电子能谱和热重(TG)分析技术分析了不同TMS流量对Si-GDP薄膜结构与热稳定性的影响.结果表明:随着TMS流量在00.06 cm3/min范围变化,Si-GDP薄膜中Si的原子含量CSi为016.62%;含Si红外吸收峰的相对强度随TMS流量的增加而明显增大;Si-GDP薄膜的TG分析显示,温度在300 ℃时,随TMS流量的增加,Si-GDP薄膜的失重减少,热稳定性增强.
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关键词:
- 硅掺杂辉光放电聚合物薄膜 /
- X射线光电子能谱 /
- 热稳定性
The Si-doped glow discharge polymer (Si-GDP) films are deposited by glow discharge polymerization technology at different tetramethylsilane (TMS) flows. The chemical structure, the composition and the thermal stabilities of Si-GDP films are analyzed by the Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and thermal gravimetric analysis. The results show that the Si content increases from 0 to 16.62%, when the flow of TMS changes from 0 to 0.06 cm3/min. The relative content of SiC, SiH, SiO, SiCH3 increases with TMS flow rate increaseing. As TMS flow increases, the thermal stability of Si-GDP film becomes good.[1] Nikroo A, Steinman D A 1999 Fusion Technol. 35 212
[2] Hoppe M L 2000 Fusion Technol. 38 42
[3] [4] [5] Hoppe M L 2000 General Atomics Report (San Diego: General Atomics) GA-A23356
[6] [7] Hoppe M L, Steinman Sr, Steinman D A 2007 General Atomics Report (San Diego: General Atomics) GA-A25664
[8] [9] Ray S C, Bao C W, Tsai H M, Chiou J W, Jan J C 2004 Appl. Phys. Lett. 85 4022
[10] Demichelis F, Pirri C F, Tresso E, Stapinski T 1992 J. Appl. Phys. 71 5641
[11] [12] [13] Anma H, Toki J, Ikeda T, Hatanaka Y 2000 Vacuum 59 665
[14] [15] Wu W J, Hon M H 1999 Surf. Coat. Technol. 111 134
[16] [17] Katayama Y, Usami K, Shimada T 1981 Philos. Mag. B 43 283
[18] Demichelis F, Crovini G, Pirri C F, Tresso E 1993 Philos. Mag. B 68 329
[19] [20] [21] Liu B, Tang W J, Song Z X, Chen Y S, Xu K W 2009 Acta Phys. Sin. 58 2042 (in Chinese) [刘 波、唐文进、宋忠孝、陈亚芍、徐可为 2009 物理学报 58 2042]
[22] Bounouh Y, Thye M L, Dehbi-Alaoui A, Matthews A, Stoquert J P 1995 Phys. Rev. B 51 9597
[23] [24] Zhang B L, He Z B, Wu W D, Liu X H, Yang X D 2009 Acta Phys. Sin. 58 6436 (in Chinese) [张宝玲、何智兵、吴卫东、刘兴华、杨向东 2009 物理学报 58 6436]
[25] [26] [27] Moulder J F,Stickle W F,Sobol P E,Bomben K D 1992 Handbook of X-ray Photoelectron Spectroscopy (Eden Prairle: Perkin-Elmer) p221
[28] Zhao D C, Ren N, Ma Z J, Qiu J W, Xiao G J, Wu S H 2008 Acta Phys. Sin. 57 1935 (in Chinese) [赵栋才、任 妮、马占吉、邱家稳、肖更竭、武生虎 2008 物理学报 57 1935]
[29] -
[1] Nikroo A, Steinman D A 1999 Fusion Technol. 35 212
[2] Hoppe M L 2000 Fusion Technol. 38 42
[3] [4] [5] Hoppe M L 2000 General Atomics Report (San Diego: General Atomics) GA-A23356
[6] [7] Hoppe M L, Steinman Sr, Steinman D A 2007 General Atomics Report (San Diego: General Atomics) GA-A25664
[8] [9] Ray S C, Bao C W, Tsai H M, Chiou J W, Jan J C 2004 Appl. Phys. Lett. 85 4022
[10] Demichelis F, Pirri C F, Tresso E, Stapinski T 1992 J. Appl. Phys. 71 5641
[11] [12] [13] Anma H, Toki J, Ikeda T, Hatanaka Y 2000 Vacuum 59 665
[14] [15] Wu W J, Hon M H 1999 Surf. Coat. Technol. 111 134
[16] [17] Katayama Y, Usami K, Shimada T 1981 Philos. Mag. B 43 283
[18] Demichelis F, Crovini G, Pirri C F, Tresso E 1993 Philos. Mag. B 68 329
[19] [20] [21] Liu B, Tang W J, Song Z X, Chen Y S, Xu K W 2009 Acta Phys. Sin. 58 2042 (in Chinese) [刘 波、唐文进、宋忠孝、陈亚芍、徐可为 2009 物理学报 58 2042]
[22] Bounouh Y, Thye M L, Dehbi-Alaoui A, Matthews A, Stoquert J P 1995 Phys. Rev. B 51 9597
[23] [24] Zhang B L, He Z B, Wu W D, Liu X H, Yang X D 2009 Acta Phys. Sin. 58 6436 (in Chinese) [张宝玲、何智兵、吴卫东、刘兴华、杨向东 2009 物理学报 58 6436]
[25] [26] [27] Moulder J F,Stickle W F,Sobol P E,Bomben K D 1992 Handbook of X-ray Photoelectron Spectroscopy (Eden Prairle: Perkin-Elmer) p221
[28] Zhao D C, Ren N, Ma Z J, Qiu J W, Xiao G J, Wu S H 2008 Acta Phys. Sin. 57 1935 (in Chinese) [赵栋才、任 妮、马占吉、邱家稳、肖更竭、武生虎 2008 物理学报 57 1935]
[29]
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