搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

缺陷分布对Ag-SiO2薄膜电阻翻转效应的影响

张培健 孟洋 刘紫玉 潘新宇 梁学锦 陈东敏 赵宏武

引用本文:
Citation:

缺陷分布对Ag-SiO2薄膜电阻翻转效应的影响

张培健, 孟洋, 刘紫玉, 潘新宇, 梁学锦, 陈东敏, 赵宏武

Influences of dislocation distribution on the resistive switching effect of Ag-SiO2 thin films

Zhang Pei-Jian, Meng Yang, Liu Zi-Yu, Pan Xin-Yu, Liang Xue-Jin, Chen Dong-Min, Zhao Hong-Wu
PDF
导出引用
  • 通过改变制备条件,研究了Ag-SiO2薄膜中的缺陷对电阻翻转效应的影响.对比不同的热处理实验条件, 发现在120 ℃退火的样品经forming过程后具有稳定的电阻转变特性;另一方面, 在Ar/O2混合气氛下生长的SiO2具有比在纯Ar下生长的样品更加稳定、重复的电阻转变特性. 通过实验分析,表明热处理、电场作用和样品制备气氛可以改变、调节样品中的缺陷分布 (Ag填隙原子和氧空位缺陷),从而导致Ag-SiO2中基于缺陷的导电通道结构的形成和湮灭, 提出了提高电阻翻转稳定性的必要条件.
    Influences of dislocation distribution on the resistive switching effect of Ag doped SiO2 thin film are investigated under different sample preparation conditions. Stable resistance switching characteristics are observed for the samples annealed at 120 ℃ and prepared in Ar/O2 mixed atmosphere. It is shown that annealing process, electric field formation and atmosphere of preparation can change the intensity and the distribution of the dislocations (Ag interstitial atoms and oxygen vacancies) in the Ag-SiO2 structure, which leads to the resistive switching effect based on the formation and annihilation of the conducting filaments.
    • 基金项目: 国家重点基础研究发展规划项目(批准号: 2007CB925002和2009CB930803) 和中国科学院知识创新工程项目(批准号: KJCX2-YW-W24)资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2007CB925002, 2009CB930803) and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W24).
    [1]

    Liu S Q, Wu N J, Ignatiev A 2000 Appl. Phys. Lett. 76 2749

    [2]

    Zhuang W W, Pan W, Ulrich B D, Lee J J, Stecker J, Burmaster A, Evans D R, Hsul S T, Tajiri M, Shimaoka A, Inoue K, Naka T, Awaya N, Sakiyama K, Wang Y, Liu S Q, Wu N J, Ignatiev A 2002 IEEE. IEDM p193

    [3]

    Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K 2006 Appl. Phys. Lett. 88 202102

    [4]

    Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R, Williams R S 2008 Nat. Nanotech. 3 429

    [5]

    Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304

    [6]

    Guan W H, Long S B, Jia R, Liu M 2007 Appl. Phys. Lett. 91 062111

    [7]

    Seo J W, Park J W, Lim K S, Yang J H , Kang S J 2008 Appl. Phys. Lett. 93 223505

    [8]

    Chen A, Haddad S, Wu Y C, Lan Z, Fang T N, Kaza S 2007 Appl. Phys. Lett. 91 123517

    [9]

    Dong R, Lee D S, Xiang W F, Oh S J, Seong D J, Heo S H, Choi H J, Kwon M J, Seo S N, Pyun M B, Hasan M, Hwang H 2007 Appl. Phys. Lett. 90 042107

    [10]

    Shang D S, Sun J R, Shi L, Shen B G 2008 Appl. Phys. Lett. 93 102106

    [11]

    Shang D S, Sun J R, Shi L, Wang Z H, Shen B G 2008 Appl. Phys. Lett. 93 172119

    [12]

    Rossel C, Meijer G I, Bremaud D, Widmer D 2001 J. Appl. Phys. 90 2892

    [13]

    Gang J L, Li S L, Meng Y, Liao Z L, Liang X J, Chen D M 2009 Acta Phys. Sin. 58 5730 (in Chinese) [刚建雷, 黎松林, 孟洋, 廖昭亮, 梁学锦, 陈东敏 2009 物理学报 58 5730]

    [14]

    Waser R, Aono M 2007 Nat. Mater. 6 833

    [15]

    Sawa A 2008 Mater. Today 11 28

    [16]

    Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M, Hwang C S 2010 Nat. Nanotech. 5 148

    [17]

    Janousch M, Meijer G I, Staub U, Delley B, Karg S F, Andreasson B P 2007 Adv. Mat. 19 2232

    [18]

    Tsubouchi K, Ohkubo I, Kumigashira H, Oshima M, Matsumoto Yitaka K, Ohnishi T, Lippmaa M, Koinuma H 2007 Adv. Mater. 19 1711

    [19]

    Shibuya K, Dittmann R, Mi S B, Waser R 2010 Adv. Mat. 22 411

    [20]

    Viana C E, Morimoto N I, Bonnaud 2000 Microelectronics Reliability 40 613

    [21]

    Kim E, Soejima N, Watanabe Y, Ishiko M, Kachi T 2010 Jpn. J. Appl. Phys. 49 04DF08

    [22]

    Santamaria J, Iborra E, Quesada F S, Diaz G G, Vidal M R 1986 Thin Solid Films 139 201

    [23]

    Schindler C, Thermadam S C P, Waser R, Kozicki M N 2007 IEEE Trans. Electron Dev. 54 2762

    [24]

    Schindler C, Weides M, Kozicki M N, Waser R 2008 Appl. Phys. Lett. 92 122910

    [25]

    Sarkar D K, Cloutier F, El Khakani M A 2005 J. Appl. Phys. 97 084302

    [26]

    Nason T C, Yang G R, Park K H, Lu T M 1991 J. Appl. Phys. 70 1392

    [27]

    Mcbrayer J D, Swanson R M, Sigmon T W 1986 J. Electrochem. Soc. A 133 1242

    [28]

    McBrayer J D, Swanson R M, Sigmon T W, Bravman J 1983 Appl. Phys. Lett. 43 653

    [29]

    Simmons J G, Verderber R R 1967 Proc. Roy. Soc. A 301 77

    [30]

    Hsiung C P, Liao H W, Gan J Y, Wu T B, Hwang J C, Chen F, Tsai M J 2010 ACS Nano 4 5414

    [31]

    Guoa X, Schindler C, Menzel S, Waser R 2007 Appl. Phys. Lett. 91 133513

    [32]

    Rozenberg M J, Inoue I H, Sánchez M J 2006 Appl. Phys. Lett. 88 033510

    [33]

    Rozenberg M J, Inoue I H, Sánchez M J 2004 Phys. Rev. Lett. 92 178302

    [34]

    Eftekhari G 1995 Phys. Stat. Sol. A 151 129

  • [1]

    Liu S Q, Wu N J, Ignatiev A 2000 Appl. Phys. Lett. 76 2749

    [2]

    Zhuang W W, Pan W, Ulrich B D, Lee J J, Stecker J, Burmaster A, Evans D R, Hsul S T, Tajiri M, Shimaoka A, Inoue K, Naka T, Awaya N, Sakiyama K, Wang Y, Liu S Q, Wu N J, Ignatiev A 2002 IEEE. IEDM p193

    [3]

    Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K 2006 Appl. Phys. Lett. 88 202102

    [4]

    Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R, Williams R S 2008 Nat. Nanotech. 3 429

    [5]

    Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304

    [6]

    Guan W H, Long S B, Jia R, Liu M 2007 Appl. Phys. Lett. 91 062111

    [7]

    Seo J W, Park J W, Lim K S, Yang J H , Kang S J 2008 Appl. Phys. Lett. 93 223505

    [8]

    Chen A, Haddad S, Wu Y C, Lan Z, Fang T N, Kaza S 2007 Appl. Phys. Lett. 91 123517

    [9]

    Dong R, Lee D S, Xiang W F, Oh S J, Seong D J, Heo S H, Choi H J, Kwon M J, Seo S N, Pyun M B, Hasan M, Hwang H 2007 Appl. Phys. Lett. 90 042107

    [10]

    Shang D S, Sun J R, Shi L, Shen B G 2008 Appl. Phys. Lett. 93 102106

    [11]

    Shang D S, Sun J R, Shi L, Wang Z H, Shen B G 2008 Appl. Phys. Lett. 93 172119

    [12]

    Rossel C, Meijer G I, Bremaud D, Widmer D 2001 J. Appl. Phys. 90 2892

    [13]

    Gang J L, Li S L, Meng Y, Liao Z L, Liang X J, Chen D M 2009 Acta Phys. Sin. 58 5730 (in Chinese) [刚建雷, 黎松林, 孟洋, 廖昭亮, 梁学锦, 陈东敏 2009 物理学报 58 5730]

    [14]

    Waser R, Aono M 2007 Nat. Mater. 6 833

    [15]

    Sawa A 2008 Mater. Today 11 28

    [16]

    Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M, Hwang C S 2010 Nat. Nanotech. 5 148

    [17]

    Janousch M, Meijer G I, Staub U, Delley B, Karg S F, Andreasson B P 2007 Adv. Mat. 19 2232

    [18]

    Tsubouchi K, Ohkubo I, Kumigashira H, Oshima M, Matsumoto Yitaka K, Ohnishi T, Lippmaa M, Koinuma H 2007 Adv. Mater. 19 1711

    [19]

    Shibuya K, Dittmann R, Mi S B, Waser R 2010 Adv. Mat. 22 411

    [20]

    Viana C E, Morimoto N I, Bonnaud 2000 Microelectronics Reliability 40 613

    [21]

    Kim E, Soejima N, Watanabe Y, Ishiko M, Kachi T 2010 Jpn. J. Appl. Phys. 49 04DF08

    [22]

    Santamaria J, Iborra E, Quesada F S, Diaz G G, Vidal M R 1986 Thin Solid Films 139 201

    [23]

    Schindler C, Thermadam S C P, Waser R, Kozicki M N 2007 IEEE Trans. Electron Dev. 54 2762

    [24]

    Schindler C, Weides M, Kozicki M N, Waser R 2008 Appl. Phys. Lett. 92 122910

    [25]

    Sarkar D K, Cloutier F, El Khakani M A 2005 J. Appl. Phys. 97 084302

    [26]

    Nason T C, Yang G R, Park K H, Lu T M 1991 J. Appl. Phys. 70 1392

    [27]

    Mcbrayer J D, Swanson R M, Sigmon T W 1986 J. Electrochem. Soc. A 133 1242

    [28]

    McBrayer J D, Swanson R M, Sigmon T W, Bravman J 1983 Appl. Phys. Lett. 43 653

    [29]

    Simmons J G, Verderber R R 1967 Proc. Roy. Soc. A 301 77

    [30]

    Hsiung C P, Liao H W, Gan J Y, Wu T B, Hwang J C, Chen F, Tsai M J 2010 ACS Nano 4 5414

    [31]

    Guoa X, Schindler C, Menzel S, Waser R 2007 Appl. Phys. Lett. 91 133513

    [32]

    Rozenberg M J, Inoue I H, Sánchez M J 2006 Appl. Phys. Lett. 88 033510

    [33]

    Rozenberg M J, Inoue I H, Sánchez M J 2004 Phys. Rev. Lett. 92 178302

    [34]

    Eftekhari G 1995 Phys. Stat. Sol. A 151 129

  • [1] 何安, 薛存. 缺陷调控临界温度梯度超导膜的磁通整流反转效应. 物理学报, 2022, 71(2): 027401. doi: 10.7498/aps.71.20211157
    [2] 曹振, 郝大鹏, 唐刚, 寻之朋, 夏辉. 团簇状缺陷对纤维束断裂过程的影响. 物理学报, 2021, 70(20): 204602. doi: 10.7498/aps.70.20210310
    [3] 刘文姝, 高润亮, 冯红梅, 刘悦悦, 黄怡, 王建波, 刘青芳. 真空磁场热处理温度对不同厚度的Ni88Cu12薄膜畴结构及磁性的影响. 物理学报, 2020, 69(9): 097401. doi: 10.7498/aps.69.20191942
    [4] 刘昊华, 王少华, 李波波, 李桦林. 缺陷致非线性电路孤子非对称传输. 物理学报, 2017, 66(10): 100502. doi: 10.7498/aps.66.100502
    [5] 张秀芝, 王凯悦, 李志宏, 朱玉梅, 田玉明, 柴跃生. 氮对金刚石缺陷发光的影响. 物理学报, 2015, 64(24): 247802. doi: 10.7498/aps.64.247802
    [6] 曲艳东, 孔祥清, 李晓杰, 闫鸿浩. 热处理对爆轰合成的纳米TiO2混晶的结构相变的影响. 物理学报, 2014, 63(3): 037301. doi: 10.7498/aps.63.037301
    [7] 车驰, 柳青峰, 马晶, 周彦平. 位移效应对量子点激光器的性能影响. 物理学报, 2013, 62(9): 094219. doi: 10.7498/aps.62.094219
    [8] 张明兰, 杨瑞霞, 李卓昕, 曹兴忠, 王宝义, 王晓晖. GaN厚膜中的质子辐照诱生缺陷研究. 物理学报, 2013, 62(11): 117103. doi: 10.7498/aps.62.117103
    [9] 贾晓琴, 何智兵, 牛忠彩, 何小珊, 韦建军, 李蕊, 杜凯. 热处理对制备辉光放电聚合物薄膜结构及光学性能的影响. 物理学报, 2013, 62(5): 056804. doi: 10.7498/aps.62.056804
    [10] 王爱迪, 刘紫玉, 张培健, 孟洋, 李栋, 赵宏武. Au/SrTiO3/Au界面电阻翻转效应的低频噪声分析. 物理学报, 2013, 62(19): 197201. doi: 10.7498/aps.62.197201
    [11] 赵学童, 李建英, 贾然, 李盛涛. 直流老化及热处理对ZnO压敏陶瓷缺陷结构的影响. 物理学报, 2013, 62(7): 077701. doi: 10.7498/aps.62.077701
    [12] 蔡雅楠, 崔灿, 沈洪磊, 梁大宇, 李培刚, 唐为华. 热处理对富硅氧化硅薄膜中硅纳米晶形成的影响. 物理学报, 2012, 61(15): 157804. doi: 10.7498/aps.61.157804
    [13] 王鑫华, 庞磊, 陈晓娟, 袁婷婷, 罗卫军, 郑英奎, 魏珂, 刘新宇. GaN HEMT栅边缘电容用于缺陷的研究. 物理学报, 2011, 60(9): 097101. doi: 10.7498/aps.60.097101
    [14] 於黄忠, 周晓明, 邓俊裕. 热处理对不同溶剂制备的共混体系太阳电池性能影响. 物理学报, 2011, 60(7): 077206. doi: 10.7498/aps.60.077206
    [15] 李盛涛, 成鹏飞, 赵雷, 李建英. ZnO压敏陶瓷中缺陷的介电谱研究. 物理学报, 2009, 58(1): 523-528. doi: 10.7498/aps.58.523
    [16] 夏志林, 邵建达, 范正修. 薄膜体内缺陷对损伤概率的影响. 物理学报, 2007, 56(1): 400-406. doi: 10.7498/aps.56.400
    [17] 李万万, 孙 康. Cd0.9Zn0.1Te晶体的Cd气氛扩散热处理研究. 物理学报, 2007, 56(11): 6514-6520. doi: 10.7498/aps.56.6514
    [18] 李万万, 孙 康. Cd1-xZnxTe晶体的In气氛扩散热处理研究. 物理学报, 2006, 55(4): 1921-1929. doi: 10.7498/aps.55.1921
    [19] 李鹏飞, 颜晓红, 王如志. 缺陷对准周期磁超晶格输运性质的影响. 物理学报, 2002, 51(9): 2139-2143. doi: 10.7498/aps.51.2139
    [20] 汤学峰, 顾 牡, 童宏勇, 梁 玲, 姚明珍, 陈玲燕, 廖晶莹, 沈炳浮, 曲向东, 殷之文, 徐炜新, 王景成. 掺镧PbWO4闪烁晶体的缺陷研究. 物理学报, 2000, 49(10): 2007-2010. doi: 10.7498/aps.49.2007
计量
  • 文章访问数:  5595
  • PDF下载量:  728
  • 被引次数: 0
出版历程
  • 收稿日期:  2011-07-19
  • 修回日期:  2012-05-28
  • 刊出日期:  2012-05-05

/

返回文章
返回