搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

羟基碳纳米管吸附SF6放电分解组分的DFT计算

张晓星 孟凡生 唐炬 杨冰

引用本文:
Citation:

羟基碳纳米管吸附SF6放电分解组分的DFT计算

张晓星, 孟凡生, 唐炬, 杨冰

DFT calculations on the adsorption of component SF6 decomposed under partial discharge onto carbon nanotubes modified by -OH

Zhang Xiao-Xing, Meng Fan-Sheng, Tang Ju, Yang Bing
PDF
导出引用
  • 本文根据密度泛函理论(density functional theory , DFT), 采用MS分子动力学仿真软件对羟基修饰的单壁碳纳米管(SWNT-OH) 吸附SF6局部放电分解的四种主要组分SOF2, SO2F2, SO2和CF4进行了详细的理论计算, 通过分析气体分子和SWNT-OH的前线轨道, 吸附过程中吸附能、电荷转移量和电子态密度的情况, 以及吸附前后SWNT-OH能隙的变化, 评判了SWNT-OH对气体分子的敏感性和选择性, 给出了SWNT-OH是否可以制备气体传感器检测SF6局部放电分解组分的理论依据.
    Partial discharge (PD) in gas insulated switchgear (GIS) is one of important factors causing accidents. The PD can lead to the decomposition of SF6, generating different gas components. To detect and analyze the decomposed characteristic components of SF6 under PD is significant for fault diagnosis of GIS. However, how to detect the characteristic components from mixed gas components is a main puzzler. In this paper, the molecular dynamics simulation software of MS is used to calculate accurately the process of single-wall carbon nannobutes modified by hydroxide radical (SWNT-OH) adsorbing the main components of SF6 decomposed under PD. The main components contain SOF2, SO2F2, SO2 and CF4. By analyzing the frontier orbital of gas molecules and SWNT-OH, as well as adsorption energy, charge transfer and the electronic density of states in the adsorption process, and the values of energy gap after SWNT-OH adsorbing the gas molecules, the sensitivity and the selectivity of SWNT-OH on gas molecules are evaluated and the theoretical basis on whether the SWNTOH can be prepared as gas sensors to detect the components of SF6 decomposed under PD is presented.
    • 基金项目: 国家重点基础研究发展计划(973计划)(批准号: 2009CB724506)资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (Grant No. 2009CB724506).
    [1]

    Sun C X, Xu G F, Tang J, Dai H J, Zhu W 2005 Proc. CSEE 25 100 (in Chinese) [孙才新, 许高峰, 唐炬, 待海军, 朱伟 2005 中国电机工程学报 25 100]

    [2]

    Tang J, Zhou Q, Xu Z R, Liu M J, Sun C S 2005 Proc. CSEE 25 1006 (in Chinese) [唐炬, 周倩, 许中荣, 刘明军, 孙才新 2005 中国电机工程学报 25 106]

    [3]

    Beyer C, Jenett H, Kfockow D 2000 IEEE Trans. Electr. Insul. 7 234

    [4]

    Zhang Z Q, Lian H S 2001 Electric Power 34 77 (in Chinese) [张仲旗, 连鸿松 2001 中国电力 34 77

    [5]

    Piemontesi M, Niemeyer L 1996 Conference Record of the 1996 IEEE International Symposium on Electrical Insulation Quebec Canada, June 16-19, 828

    [6]

    Chu F Y 1986 IEEE Trans. Dielect. Electr. Insul. 21 693

    [7]

    Luo L S, Yao W J, Wang J, Li C R, Zheng S S, Wu X B, Mao T 2010 Power System Technology 34 225 (in Chinese) [骆立实, 姚文军, 王军, 李成榕, 郑书生, 邬晓波, 毛婷 2010 电网技术 34 225]

    [8]

    IEC. Guidelines for the checking and treatment of sulfur hexafluoride (SF6) taken from electrical equipment and specification for its re-use 2004

    [9]

    Zhang X X, Yao Y, Tang J, Sun C X, Wan L Y 2008 High Voltage Engineering 34 664 (in Chinese) [张晓星, 姚尧, 唐炬 2008 高电压技术 34 664]

    [10]

    Hergli R, Casanovas J, Derdouri A 1988 IEEE Trans. Electr. Insul. 23 451

    [11]

    Kurte R, Heise H M, Klockow D 2001 J. Mol. Struct. 565 505

    [12]

    Kong J, Franklin N R, Zhou C, Dai H 2000 Science 287 622

    [13]

    Collins P G, Bradley K, Ishigami M 2000 Science 287 1801

    [14]

    Qi P, Vermesh O, Grecu M 2003 Nano Letters 3 347

    [15]

    Modi A, Koratkar N, Lass E 2003 Nature 424 171

    [16]

    Zhang Y, Liu J H, Li X 2006 Sensors and Actuators A 128 278

    [17]

    Zhang Y, Liu J H, Li X 2005 Sensors and Actuators A 125 15

    [18]

    Li X, Liu J H, Zhang Y 2009 Chinese J. Sci. Instrum. 24 4952 (in Chinese) [李昕, 刘君华, 张勇 2003 仪器仪表学报 24 4952]

    [19]

    Hui G H, Wu L L, Pan M 2006 Chinese J. Anal. Chem. 34 1813 (in Chinese) [惠国华, 吴莉莉, 潘敏 2006 分析化学 34 1813]

    [20]

    Fan B B, Wang L L, Wen H J, Guan L, Wang H L, Zhang R 2001 Acta Phys. Sin. 60 012101 (in Chinese) [范冰冰, 王利娜, 温合静, 关莉, 王海龙 张锐 2011 物理学报 60 012101]

    [21]

    Zhang H, Xiao M Z, Zhang G Y, Lu G X, Zhu S L 2011 Acta Phys. Sin. 60 026103 (in Chinese) [张辉, 肖明珠, 张国英, 路广霞, 朱圣龙 2011 物理学报 60 026103]

    [22]

    Wei Y, Hu H F, Wang Z Y, Cheng C P, Chen N T, Xie N 2011 Acta Phys. Sin. 60 027307 (in Chinese) [魏燕, 胡慧芳, 王志勇, 程彩萍, 陈南庭, 谢能 2011 物理学报 60 027307]

    [23]

    Perdew J, Burke K, Emzerhof M 1996 Phys. Rev. Lett. 77 3865

    [24]

    Zhao Q, Nardell M B, Lu W 2005 Nano Lett. 5 847

    [25]

    Shang W, Wang W J, Wang S 2010 J. Chin. Chem. Soc. 68 2389 (in Chinese) [尚威, 王文举, 王嵩 2010 化学学报 68 2389]

  • [1]

    Sun C X, Xu G F, Tang J, Dai H J, Zhu W 2005 Proc. CSEE 25 100 (in Chinese) [孙才新, 许高峰, 唐炬, 待海军, 朱伟 2005 中国电机工程学报 25 100]

    [2]

    Tang J, Zhou Q, Xu Z R, Liu M J, Sun C S 2005 Proc. CSEE 25 1006 (in Chinese) [唐炬, 周倩, 许中荣, 刘明军, 孙才新 2005 中国电机工程学报 25 106]

    [3]

    Beyer C, Jenett H, Kfockow D 2000 IEEE Trans. Electr. Insul. 7 234

    [4]

    Zhang Z Q, Lian H S 2001 Electric Power 34 77 (in Chinese) [张仲旗, 连鸿松 2001 中国电力 34 77

    [5]

    Piemontesi M, Niemeyer L 1996 Conference Record of the 1996 IEEE International Symposium on Electrical Insulation Quebec Canada, June 16-19, 828

    [6]

    Chu F Y 1986 IEEE Trans. Dielect. Electr. Insul. 21 693

    [7]

    Luo L S, Yao W J, Wang J, Li C R, Zheng S S, Wu X B, Mao T 2010 Power System Technology 34 225 (in Chinese) [骆立实, 姚文军, 王军, 李成榕, 郑书生, 邬晓波, 毛婷 2010 电网技术 34 225]

    [8]

    IEC. Guidelines for the checking and treatment of sulfur hexafluoride (SF6) taken from electrical equipment and specification for its re-use 2004

    [9]

    Zhang X X, Yao Y, Tang J, Sun C X, Wan L Y 2008 High Voltage Engineering 34 664 (in Chinese) [张晓星, 姚尧, 唐炬 2008 高电压技术 34 664]

    [10]

    Hergli R, Casanovas J, Derdouri A 1988 IEEE Trans. Electr. Insul. 23 451

    [11]

    Kurte R, Heise H M, Klockow D 2001 J. Mol. Struct. 565 505

    [12]

    Kong J, Franklin N R, Zhou C, Dai H 2000 Science 287 622

    [13]

    Collins P G, Bradley K, Ishigami M 2000 Science 287 1801

    [14]

    Qi P, Vermesh O, Grecu M 2003 Nano Letters 3 347

    [15]

    Modi A, Koratkar N, Lass E 2003 Nature 424 171

    [16]

    Zhang Y, Liu J H, Li X 2006 Sensors and Actuators A 128 278

    [17]

    Zhang Y, Liu J H, Li X 2005 Sensors and Actuators A 125 15

    [18]

    Li X, Liu J H, Zhang Y 2009 Chinese J. Sci. Instrum. 24 4952 (in Chinese) [李昕, 刘君华, 张勇 2003 仪器仪表学报 24 4952]

    [19]

    Hui G H, Wu L L, Pan M 2006 Chinese J. Anal. Chem. 34 1813 (in Chinese) [惠国华, 吴莉莉, 潘敏 2006 分析化学 34 1813]

    [20]

    Fan B B, Wang L L, Wen H J, Guan L, Wang H L, Zhang R 2001 Acta Phys. Sin. 60 012101 (in Chinese) [范冰冰, 王利娜, 温合静, 关莉, 王海龙 张锐 2011 物理学报 60 012101]

    [21]

    Zhang H, Xiao M Z, Zhang G Y, Lu G X, Zhu S L 2011 Acta Phys. Sin. 60 026103 (in Chinese) [张辉, 肖明珠, 张国英, 路广霞, 朱圣龙 2011 物理学报 60 026103]

    [22]

    Wei Y, Hu H F, Wang Z Y, Cheng C P, Chen N T, Xie N 2011 Acta Phys. Sin. 60 027307 (in Chinese) [魏燕, 胡慧芳, 王志勇, 程彩萍, 陈南庭, 谢能 2011 物理学报 60 027307]

    [23]

    Perdew J, Burke K, Emzerhof M 1996 Phys. Rev. Lett. 77 3865

    [24]

    Zhao Q, Nardell M B, Lu W 2005 Nano Lett. 5 847

    [25]

    Shang W, Wang W J, Wang S 2010 J. Chin. Chem. Soc. 68 2389 (in Chinese) [尚威, 王文举, 王嵩 2010 化学学报 68 2389]

  • [1] 董逸蒙, 孙永娇, 侯煜晨, 王炳亮, 陆志远, 张文栋, 胡杰. SnO2/ZnS异质结气体传感器的制备及其室温NO2敏感特性. 物理学报, 2023, 72(16): 160701. doi: 10.7498/aps.72.20230735
    [2] 丁怡, 盛雷梅. 扭转单壁碳纳米管的第一性原理研究. 物理学报, 2023, 72(19): 197302. doi: 10.7498/aps.72.20230566
    [3] 张如轩, 宗肖航, 于婷婷, 葛一璇, 胡适, 梁文杰. 基于纳米传感器矩阵的混合气体组分探测与识别. 物理学报, 2022, 71(18): 180702. doi: 10.7498/aps.71.20220955
    [4] 孙志伟, 何燕, 唐元政. 单壁碳纳米管受限空间内水的分布. 物理学报, 2021, 70(6): 060201. doi: 10.7498/aps.70.20201523
    [5] 王玉龙, 张晓虹, 李丽丽, 高俊国, 郭宁, 程成. 基于超声波声压衰减效应的局部放电源定位与强度标定. 物理学报, 2021, 70(9): 095209. doi: 10.7498/aps.70.20201727
    [6] 令维军, 夏涛, 董忠, 左银艳, 李可, 刘勍, 路飞平, 赵小龙, 王勇刚. 基于单壁碳纳米管调Q锁模低阈值Tm,Ho:LiLuF4激光器. 物理学报, 2018, 67(1): 014201. doi: 10.7498/aps.67.20171748
    [7] 孙小亮, 陈长虹, 孟德佳, 冯士高, 于洪浩. 复合金属光栅模式分离与高性能气体传感器应用. 物理学报, 2015, 64(14): 147302. doi: 10.7498/aps.64.147302
    [8] 董信征, 于振华, 田金荣, 李彦林, 窦志远, 胡梦婷, 宋晏蓉. 147 fs碳纳米管倏逝场锁模全光纤掺铒光纤激光器. 物理学报, 2014, 63(3): 034202. doi: 10.7498/aps.63.034202
    [9] 王莎莎, 潘玉寨, 高仁喜, 祝秀芬, 苏晓慧, 曲士良. 碳纳米管锁模双包层光纤激光器的实验研究. 物理学报, 2013, 62(2): 024209. doi: 10.7498/aps.62.024209
    [10] 李论雄, 苏江滨, 吴燕, 朱贤方, 王占国. 电子束诱导单壁碳纳米管不稳定的新观察. 物理学报, 2012, 61(3): 036401. doi: 10.7498/aps.61.036401
    [11] 秦玉香, 王飞, 沈万江, 胡明. 氧化钨纳米线-单壁碳纳米管复合型气敏元件的室温NO2敏感性能与机理. 物理学报, 2012, 61(5): 057301. doi: 10.7498/aps.61.057301
    [12] 赵佩, 郑继明, 陈有为, 郭平, 任兆玉. 单壁碳纳米管吸附氧分子的电子输运性质理论研究. 物理学报, 2011, 60(6): 068501. doi: 10.7498/aps.60.068501
    [13] 秦威, 张振华, 刘新海. 卷曲效应对单壁碳纳米管电子结构的影响. 物理学报, 2011, 60(12): 127303. doi: 10.7498/aps.60.127303
    [14] 马燕萍, 尚学府, 顾智企, 李振华, 王 淼, 徐亚伯. 单壁碳纳米管在场发射显示器中的应用研究. 物理学报, 2007, 56(11): 6701-6704. doi: 10.7498/aps.56.6701
    [15] 牛志强, 方 炎. 催化剂组分对制备单壁碳纳米管的影响. 物理学报, 2007, 56(3): 1796-1801. doi: 10.7498/aps.56.1796
    [16] 梁君武, 胡慧芳, 韦建卫, 彭 平. 氧吸附对单壁碳纳米管的电子结构和光学性能的影响. 物理学报, 2005, 54(6): 2877-2882. doi: 10.7498/aps.54.2877
    [17] 欧阳雨, 方 炎. 水对800℃下CH4在Ar气中分解制备单壁碳纳米管的影响. 物理学报, 2005, 54(2): 578-581. doi: 10.7498/aps.54.578
    [18] 陆 地, 颜晓红, 丁建文. 单壁碳纳米管中电子的有效质量. 物理学报, 2004, 53(2): 527-530. doi: 10.7498/aps.53.527
    [19] 赵廷凯, 柳永宁. 温控电弧放电法大量制备单壁碳纳米管. 物理学报, 2004, 53(11): 3961-3965. doi: 10.7498/aps.53.3961
    [20] 孙建平, 张兆祥, 侯士敏, 赵兴钰, 施祖进, 顾镇南, 刘惟敏, 薛增泉. 用场发射显微镜研究单壁碳纳米管场发射. 物理学报, 2001, 50(9): 1805-1809. doi: 10.7498/aps.50.1805
计量
  • 文章访问数:  6646
  • PDF下载量:  634
  • 被引次数: 0
出版历程
  • 收稿日期:  2011-09-17
  • 修回日期:  2011-11-14
  • 刊出日期:  2012-08-05

/

返回文章
返回