二维辉钼材料及器件研究进展

赖占平

doi:10.7498/aps.62.056801

摘要

经过几十年的发展, 集成电路的特征尺寸将在1015年内达到其物理极限, 替代材料的研究迫在眉睫. 石墨烯曾被寄予厚望, 但由于其缺乏带隙限制了在数字电路领域的应用. 近年来, 单层及多层辉钼材料由于具有优异的半导体性能, 有可能超过石墨烯成为硅的替代者而引起了微纳电子领域的广泛关注. 本文对近二年国际上辉钼半导体器件研制、辉钼半导体材料的性能表征及制备方法研究等方面的进展进行了综述, 并对大面积单层材料的研制提出了值得关注的方向.

关键词:

MoS2 /
辉钼材料 /
纳米材料 /
集成电路

Abstract

After several decade developments the critical dimension of an integrated circuit will reach its limit value in the next 10-15 years, and the substitute materials been to be researched. Graphene has beed considered the most likely candidate, however, pristine graphene does not have a bandgap, a property that is essential for many application, including transistors. The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much attention due to its excellent semiconductor property and potential applications in nanoelectronics. The device preparation, two-dimensional material research and property analysis of MoS2 are summarized and the trend for future research on large sigle-layer MoS2 crystal is presented.

Keywords:

MoS2 /
nanomaterial /
integrated circuit /

作者及机构信息

赖占平

1.
中国电子科技集团公司第四十六研究所, 天津 300220

Authors and contacts

Lai Zhan-Ping

1.
Institute of China Electronics Technology Group Corporation, Tianjin 300220, China

参考文献

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施引文献

[1]	Zhu Z M, Qian L B, Yang Y T 2009 Acta Phys. Sin. 58 2631 (in Chinese) [朱障明, 钱利波, 杨银堂 2009 物理学报 58 2631]
[2]	Zhu M Y, Liu C, Bo W Q,Shu J W, Hu Y M, Jin H M, Wang S W, Li W Y 2012 Acta Phys. Sin. 61 078106 (in Chinese) [朱明原, 刘聪, 薄伟强, 舒佳武, 胡业旻, 金红明, 王世伟, 李卫英 2012 物理学报 61 078106]
[3]	Ni P G 2010 Acta Phys. Sin. 59 340 (in Chinese) [倪培根 2010 物理学报 59 340]
[4]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[5]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V,Firsov A A 2005 Nature 438 197
[6]	Zhang Y, Tan Y W, Stormer H L, Kim P 2005 Nature 438 201
[7]	Du X, Skachko I, Duerr F, Luican A, Andrei E Y 2009 Nature 462 192
[8]	Yao Y, Ye F, Qi X L, Zhang S C, Fang Z 2007 Phys. Rev. B 75 041401(R)
[9]	Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R, Wang F 2009 Nature 459 820
[10]	Castro E V, Novoselov K S, Morozov S V, Peres N M R, Santos J M B L, Nilsson J, Guinea F, Geim A K, Neto A H C 2007 Phys. Rev. Lett. 99 6802
[11]	Li X, Wang X, Zhang L, Lee S, Dai H 2008 Science 319 1229
[12]	Gorjizadeh N, Farajian A A, Esfarjani K, Kawazoe Y 2008 Phys. Rev. B 78 155427
[13]	Berger C, Song Z M, Li T B, Li X B, Ogbazghi A Y, Feng R, Dai Z T, Marchenkov A N, Conrad E H, First P N, Heer W A 2004 J. Phys. Chem. B 108 19912
[14]	Zhou S Y, Gweon G H, Fedorov A V, First P N, Heer W A, Lee D H, Guinea F, Neto A H, CLanzara A 2007 J. Nat. Mat. 6 770
[15]	Lemme M, CEchtermeyer T, JBaus MKurz H 2007 IEEE Electron Device Letters 28 282
[16]	Chen Z H, Lin Y M, Rooks M J, Avouris P 2007 Physica E:Low-Dimensional Systems & Nanostructures 40 228
[17]	Anatoly G, Olga K, Nina L, Vladislav N 2010 MEMSTECH'2010, Polyana-Svalyava (Zakarpattya) UKRAINEApril 20-232010 p111
[18]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
[19]	Ayari A, Cobas E, Ogundadegbe O, Fuhrer M S 2007 J. Appl. Phys. 101 014507
[20]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nature Nanotechnology 6 147
[21]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[22]	Yin Z, Li H, Li H, Jiang L, Shi Y, Sun Y, Lu G, Zhang Q, Chen X, Zhang H 2012 ACS Nano 6 74
[23]	Zhang Y, Ye J, Matsuhashi Y, Iwasa Y 2012 Nano Lett. 12 1136
[24]	Liu H, Ye P D 2012 IEEE Electron Device Letters 33 546
[25]	Late D J, Liu B, Matte H S S R, Dravid V P, Rao C N R 2012 ACS Nano 6 5635
[26]	Qiu H, Pan L, Yao Z, Li J, Shi Y 2012 Phys. Rev. Lett. 100 123104
[27]	Yoon Y, Ganapathi K, Salahuddin S 2011 Nano Lett. 11 3768
[28]	Kaasbjerg K, Thygesen K S, Jacobsen K W 2012 Phys. Rev. B 85 115317
[29]	Scalise E, Houssa M, Pourtois G, Afanas'ev V, Stesmans A 2012 Nano Res. 5 43
[30]	Kadantsev E S, Hawrylak P 2012 Solid State Comm. 152 909
[31]	Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V, Geim A K 2005 PNAS 102 10451
[32]	Benameur M M, Radisavljevic B, Sahoo S, Berger H, Kis A 2011 Nanotechnology 22 125706
[33]	Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M 2011 Nano Lett. 11 5111
[34]	Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C, Galli G, Wang F 2010 Nano Lett. 10 1271
[35]	Li H, Zhang Q, Yap C C R, Tay B K, Edwin T H T, Olivier A, Baillargeat D 2012 Adv. Funct. Mater. 22 1385
[36]	Lee C, Yan H, Brus L E, Heinz T F, Hone J, Ryu S 2010 ACS Nano 4 2695
[37]	Chakraborty B, Bera A, Muthu D V S, Bhowmick S, Waghmare U V, Sood A K 2012 Phys. Rev. B 85 161403(R)
[38]	Brivio J, Alexander D T L, Kis A 2011 Nano Lett. 11 5148
[39]	Bertolazzi S, Brivio J, Kis A 2011 ACS Nano 5 9703
[40]	Castellanos-Gomez A, Poot M, Steele G A, Zant H S J, Agrít N, Rubio-Bollinger G 2012 Nanoscale Research Lett. 7 233
[41]	Li T 2012 Phys.Rev. B 85 235407
[42]	Castellanos-Gomez A, Barkelid M, Goossens A M, Calado V E, Zant H S J, Steele G A 2012 Nano Lett. 12 3187
[43]	Coleman J N, Lotya M, O'Neill A, Bergin S D, King P J, Khan U, Young K, Gaucher A, De S, Smith R J, Shvets I V, Arora S K, Stanton G, Kim H, Lee K, Kim G T, Duesberg G S,Hallam T, Boland J J, Wang J J, Donegan J F, Grunlan J C, Moriarty G, Shmeliov A, Nicholls R J, Perkins J M, Grieveson E M, Theuwissen K, McComb D W, Nellist P D, Nicolosi V 2011 Science 331 568
[44]	Zeng Z Y, Yin Z Y, Huang X, Li H, He Q, Lu G, Boey F, Zhang H 2011 Angew. Chem. Int. Ed. 50 11093
[45]	Liu K K, Zhang W J, Lee Y H, Lin Y C, Chang M T, Su C Y, Chang C S, Li H, Shi Y M, Zhang H, Lai C S, Li L J 2012 Nano Lett. 12 1538
[46]	Zhan Y J, Liu Z, Najmaei S, Ajayan P M, Lou J 2012 Small 7 966
[47]	Kim D, Sun D Z, Lu W H, Cheng Z H, Zhu Y M, Le D, Rahman T S, Bartels L 2011 Langmuir 27 1165
[48]	Lee Y H, Zhang X Q, Zhang W J, Chang M T, Lin C T, Chang K D, Yu Y C, Wang J T W, Chang C S, Li L J, Lin T W 2012 Adv. Mater. 24 2320

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