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非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

王利 张晓丹 杨旭 魏长春 张德坤 王广才 孙建 赵颖

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非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究

王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖

Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell

Wang Li, Zhang Xiao-Dan, Yang Xu, Wei Chang-Chun, Zhang De-Kun, Wang Guang-Cai, Sun Jan, Zhao Ying
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  • 采用重掺杂的p型微晶硅来改善前电极掺硼氧化锌 (ZnO:B) 和窗口层p型非晶硅碳 (p-a-SiC) 之间的非欧姆接触特性. 通过优化插入层p型微晶硅的沉积参数 (氢稀释比H2/SiH4、硼掺杂比B2H6/SiH4) 获得了较薄厚度下 (20 nm) 暗电导率高达4.2 S/cm的p型微晶硅材料. 在本征层厚度约为150 nm, 仅采用Al背反射电极的情况下,获得了效率6.37%的非晶硅顶电池(Voc=911 mV, FF=71.7%, Jsc=9.73 mA/cm2), 开路电压Voc和填充因子FF均较无插入层的电池有大幅提升.
    Highly conductive p-type microcrystalline silicon thin layer is inserted between the front layer (ZnO:B) and the window layer(p-a-SiC) in a p-i-n amorphous silicon solar cell, and the inserted layer is found to be able to eliminate the non-ohmic contact, which is caused by the difference in the work function between the ZnO:B and p-a-SiC. The properties of the p-type microcrystalline silicon are studied by varying layer thickness, hydrogen dilution ratio and B2H6/SiH4 ratio. The optimized p-type microcrystalline silicon film can have a dark conductivity as large as 4.2 S/cm at a thickeness of 20 nm. The p-i-n type amorphous silicon solar cell with the p-type microcrystalline silicon is shown to have a good open circuit voltage and fill factor compared with without the p-type microcrystalline silicon layer.
    • 基金项目: 国家重点基础研究发展计划 (批准号: 2011CBA00706, 2011CBA00707)、国家自然科学基金(批准号: 60976051) 和教育部新世纪人才项目 (批准号: NCET-08-0295) 资助的课题.
    • Funds: Project supported by the National Basic Research Program of China(Grant Nos. 2011CBA00706, 2011CBA00707), the National Natural Science Foundation of China(Grant No. 60976051), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0295).
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    Bailat J, Domine D, Schluchter R, Steinhauser J, Fay S, Freitas F 2000 31th IEEE Semiconductor Interface Specialists Conference (SISC) Sa Diego, USA, December 7-9, 2000 p1533

    [12]

    Zhu F, Zeng K, Hu J, Shen L, Zhang K 2005 Mater. Res. Soc. Symp. Proc. 872 211

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    Koval R J, Chen C, Ferreira G M, Ferlauto A S 2002 Appl. Phys. Lett. 81 1258

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    Kondo M, Fukawa M, Guo L, Matsuda A 2002 J. Non Cryst. Solids 302 108

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    [16]

    Shah A 2003 Thin Film Silicon Solar Cells (1st Edn.) (Switzerland: CRC Press) p311

    [17]

    Ballif C, Meillaud F, Feltrin A, Billet A 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p941

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    Kobayashi T, Kawagishi T, Fukumuro N 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p984

  • [1]

    Aberle A G 2009 Thin solids Films 517 4706

    [2]

    Green M A, Emery K, King D L, Hisikawa Y, Warta W 2006 Prog. Photovoltaics 14 45

    [3]

    Benagli S, Borrello D, Sauvain E V, Meier J 2009 Proceedings of the 24th EU PVSE C Hamburg, Germany, September 21-24, 2009 p293

    [4]

    Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011Chin. Phys. B 20 108801

    [5]

    Ding L, Boccard M, Bugnon G, Benkhaira M, Nicolay S, Despeisse M, Meillaud F, Ballif C 2012 Sol. Energy Mater. Sol. Cells 98 331

    [6]

    Meillaud F, Feltrin A, Despeisse M, Haug F J, Dominé D, Python M, Soderstrom T, Cuony P, Boccard M, Nicolay S, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 127

    [7]

    Wanka H N, Schubert M B, Lotter E 1996 Sol. Energy Mater. Sol. Cells 41 519

    [8]

    Yamamoto K, Yoshida H, Kokame K 2003 Proc. 3rd World Conf. on Photovoltaic Energy Conversion Osaka, Japan, May 17-20, 2003 S2O-B9-03

    [9]

    Kroll U, Torres P, Meier J, Selvan J 2011 26th European Photovoltaic Solar Energy Conference and Exhibiton Hamburg, Germany, September 5-8, 2011 p2287

    [10]

    Yunaz I A, Kasashima S, Inthisang S 2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Philadelphia, USA, June 7-12, 2009 p001592

    [11]

    Bailat J, Domine D, Schluchter R, Steinhauser J, Fay S, Freitas F 2000 31th IEEE Semiconductor Interface Specialists Conference (SISC) Sa Diego, USA, December 7-9, 2000 p1533

    [12]

    Zhu F, Zeng K, Hu J, Shen L, Zhang K 2005 Mater. Res. Soc. Symp. Proc. 872 211

    [13]

    Koval R J, Chen C, Ferreira G M, Ferlauto A S 2002 Appl. Phys. Lett. 81 1258

    [14]

    Kondo M, Fukawa M, Guo L, Matsuda A 2002 J. Non Cryst. Solids 302 108

    [15]

    Rath J K, Schropp R E I 1998 Solar Energy Materials and Solar Cells 53 189

    [16]

    Shah A 2003 Thin Film Silicon Solar Cells (1st Edn.) (Switzerland: CRC Press) p311

    [17]

    Ballif C, Meillaud F, Feltrin A, Billet A 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p941

    [18]

    Kobayashi T, Kawagishi T, Fukumuro N 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p984

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出版历程
  • 收稿日期:  2012-09-18
  • 修回日期:  2012-10-31
  • 刊出日期:  2013-03-05

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