具有新型双空穴注入层的有机发光二极管

刘佰全; 兰林锋; 邹建华; 彭俊彪

doi:10.7498/aps.62.087302

摘要

采用新型双空穴注入层N, N, N', N'-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)及器件结构:ITO/MeO-TPD(15 nm)/CuPc(15 nm)/ N, N'-Bis(naphthalen-1-yl)-N, N'-bis(phenyl)benzidine (NPB, 15 nm)/8-hydroxyquinoline (Alq3, 50 nm)/LiF(1 nm)/Al(120 nm), 研制出高效有机发光二极管(器件D), 与其他器件(器件A, 没有空穴注入层的器件; 器件B, MeO-TPD单空穴注入层; 器件C, CuPc单空穴注入层)相比, 其性能得到明显改善. 器件D的起亮电压降至3.2 V, 比器件A, B, C的起亮电压分别降低了2, 0.3, 0.1 V. 器件D在10 V时, 其最大亮度为23893 cd/m2, 最大功率效率为1.91 lm/W, 与器件A, B, C的最大功率效率相比, 分别提高了43% (1.34 lm/W), 22% (1.57 lm/W), 7% (1.79 lm/W). 性能改善的主要原因是由于空穴注入和传输性能得到了改善, 通过单空穴型器件的J-V 曲线对这一现象进行了分析.

关键词:

Abstract

Highly efficient organic light-emitting diode is fabricated with a novel double hole injection layer consisting of MeO-TPD/CuPc. We observe that the insertion of such a double hole injection layer leads to a striking enhancement in the electrical property:higher luminance, power efficiency and lower driving voltage. It has the configuration of ITO/MeO-TPD (15 nm)/CuPc(15 nm)/NPB(15 nm)/Alq3 (50 nm)/LiF(1 nm)/Al(120 nm). Its turn-on voltage is 3.2 V, which is 2, 0.3 and 0.1 V lower than those of the device without hole injection layer (device A) and the devices using MeO-TPD (device B), CuPc (device C) as hole injection layer, respctively. The highest luminance of the novel device reaches 23893 cd/m2 at a drving voltage of 10 V. The maximum power efficiency of the novel decive is 1.91 lm/W, which is 43% (1.34 lm/W), 22% (1.57 lm/W) and 7% (1.79 lm/W) higher than those of devices A, B and C, respectively. The improvement is ascribed to its high hole injection and transport ability. The results are verified by using the J-V curves of "hole-only" devices.

Keywords:

作者及机构信息

1.
华南理工大学高分子光电材料与器件研究所, 广州 510640;

2.
发光材料与器件国家重点实验室, 广州 510640

基金项目: 国家重点基础研究发展计划(批准号:2009CB623604)、国家自然科学基金(批准号:61204087, 51173049, U0634003, 61036007, 60937001)和中央高校基本科研业务费 (批准号:2011ZB0002, 2011ZM0009)资助的课题.

Authors and contacts

1.
Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China;

2.
State Key Laboratory of Luminescent Materials and Devices, Guangzhou 510640, China

Funds: Project supported by the National Basic Research Program Project of China (Grant No. 2009CB623604), the National Natural Science Foundation of China (Grant Nos. 61204087, 51173049, U0634003, 61036007, 60937001), and the Fundamental Research Fund for the Central Universities, China (Grant Nos. 2011ZB0002, 2011ZM0009).

参考文献

[1]	Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Zou J H, Tao H, Wu H B, Peng J B 2009 Acta Phys. Sin. 58 1224 (in Chinese) [邹建华, 陶洪, 吴宏滨, 彭俊彪 2009 物理学报 58 1224]
[3]	Zou J H, Lan L F, Xu R X, Yang W, Peng J B 2010 Acta Phys. Sin. 59 1275 (in Chinese) [邹建华, 兰林锋, 徐瑞霞, 杨伟, 彭俊彪 2010 物理学报 59 1275]
[4]	Li C, Peng J B, Zeng W J 2009 Acta Phys. Sin. 58 1992 (in Chinese) [李春, 彭俊彪, 曾文进 2009 物理学报 58 1992]
[5]	Zou J H, Liu J, Wu H B, Yang W, Peng J B, Cao Y 2009 Org. Electron. 10 843
[6]	Wang X P, Mi B X, Gao Z Q, Guo Q, Huang W 2011 Acta Phys. Sin. 60 087808 (in Chinese) [王旭鹏, 密保秀, 高志强, 郭晴, 黄维 2011 物理学报 60 087808]
[7]	Toshinori M, Yoshiki K, Hideyuki M 2007 Appl. Phys. Lett. 91 253504
[8]	Lee Y H, Kim W J, Kim T Y, Jung J, Lee J Y, Park H D, Kim T W, Hong J W 2007 Current Appl. Phys. 7 409
[9]	Chen S F, Wang C W 2004 Appl. Phys. Lett. 85 765
[10]	Zhang H M, Choy W C H 2008 IEEE Trans. Electron Dev. 55 2517
[11]	Hou J, Wu J, Xie Z, Wang L 2009 Appl. Phys. Lett. 95 203508
[12]	Lin H P, Yu D, Zhang B, X W, Li J, Zhang L, Jiang X Y, Zhang Z L 2010 Solid State Commun. 150 1601
[13]	Qiu C F, Peng H J, Chen H Y, Xie Z L, Wong M, Kwok H S 2004 IEEE Trans. Electron Dev. 51 1207
[14]	Zhao Y B, Chen J S, Chen W, Ma D G 2012 J. Appl. Phys. 111 043716
[15]	Lee H, Lee J, Jeon P, Jeong K, Yi Y, Kim T G, Kim J W, Lee J W 2012 Org. Electron. 13 820
[16]	Zou Y, Deng Z, Lv Z, Chen Z, Xu D, Chen Y, Yin Y, Du H, Wang Y 2010 J. Lumin. 130 959
[17]	Scott J C, Kaufman J H, Brock P J, Dipietro R, Salem J, Goitia J A 1996 J. Appl. Phys. 792745
[18]	Vanslyke S A, Chen C H, Tang C W 1996 Appl. Phys. Lett. 69 2160
[19]	Shi C W, Tang C W 1997 Appl. Phys. Lett. 70 1665
[20]	Adachi C, Nagai K, Tamoto N 1995 Appl. Phys. Lett. 66 2679

施引文献

[1]	Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Zou J H, Tao H, Wu H B, Peng J B 2009 Acta Phys. Sin. 58 1224 (in Chinese) [邹建华, 陶洪, 吴宏滨, 彭俊彪 2009 物理学报 58 1224]
[3]	Zou J H, Lan L F, Xu R X, Yang W, Peng J B 2010 Acta Phys. Sin. 59 1275 (in Chinese) [邹建华, 兰林锋, 徐瑞霞, 杨伟, 彭俊彪 2010 物理学报 59 1275]
[4]	Li C, Peng J B, Zeng W J 2009 Acta Phys. Sin. 58 1992 (in Chinese) [李春, 彭俊彪, 曾文进 2009 物理学报 58 1992]
[5]	Zou J H, Liu J, Wu H B, Yang W, Peng J B, Cao Y 2009 Org. Electron. 10 843
[6]	Wang X P, Mi B X, Gao Z Q, Guo Q, Huang W 2011 Acta Phys. Sin. 60 087808 (in Chinese) [王旭鹏, 密保秀, 高志强, 郭晴, 黄维 2011 物理学报 60 087808]
[7]	Toshinori M, Yoshiki K, Hideyuki M 2007 Appl. Phys. Lett. 91 253504
[8]	Lee Y H, Kim W J, Kim T Y, Jung J, Lee J Y, Park H D, Kim T W, Hong J W 2007 Current Appl. Phys. 7 409
[9]	Chen S F, Wang C W 2004 Appl. Phys. Lett. 85 765
[10]	Zhang H M, Choy W C H 2008 IEEE Trans. Electron Dev. 55 2517
[11]	Hou J, Wu J, Xie Z, Wang L 2009 Appl. Phys. Lett. 95 203508
[12]	Lin H P, Yu D, Zhang B, X W, Li J, Zhang L, Jiang X Y, Zhang Z L 2010 Solid State Commun. 150 1601
[13]	Qiu C F, Peng H J, Chen H Y, Xie Z L, Wong M, Kwok H S 2004 IEEE Trans. Electron Dev. 51 1207
[14]	Zhao Y B, Chen J S, Chen W, Ma D G 2012 J. Appl. Phys. 111 043716
[15]	Lee H, Lee J, Jeon P, Jeong K, Yi Y, Kim T G, Kim J W, Lee J W 2012 Org. Electron. 13 820
[16]	Zou Y, Deng Z, Lv Z, Chen Z, Xu D, Chen Y, Yin Y, Du H, Wang Y 2010 J. Lumin. 130 959
[17]	Scott J C, Kaufman J H, Brock P J, Dipietro R, Salem J, Goitia J A 1996 J. Appl. Phys. 792745
[18]	Vanslyke S A, Chen C H, Tang C W 1996 Appl. Phys. Lett. 69 2160
[19]	Shi C W, Tang C W 1997 Appl. Phys. Lett. 70 1665
[20]	Adachi C, Nagai K, Tamoto N 1995 Appl. Phys. Lett. 66 2679

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