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逾渗网格模型是当前忆阻器件机理分析研究领域的热点之一, 但现有模型缺乏对初态设定的讨论. 本文对逾渗网格模型进行了简化, 并基于此, 通过电压激励步进的方式, 研究了不同初态对单极性忆阻开关元件中逾渗导电通道形成的影响, 分析了形成通道的动态过程以及相应的物理意义, 验证了忆阻开关元件高低阻态的阻值实际表现为高斯分布而非理想双值稳态; 而不同初态条件下, 忆阻开关元件导电通道的形状存在着不同的"树形"结构, 进而影响着其阻值的分布. 研究成果有助于进一步揭示忆阻器尚未明确的导电机理, 为今后对具体不同类型的忆阻元件的初态分析提供指导性作用.Due to its fitting the resistive switching behavior of memristor well, the percolation network model has recently attracted attention in the memristive mechanism field. However, the current 2D percolation network model lacks the pristine states analysis. In this paper, the original model is simplified to study the effects of pristine state on the forming process of conductive percolation channel with the increase of applied voltage. Intuitively, such a percolation network model not only demonstrates the dynamic process of local conducting channels formed in the physical meaning, which verifies that the resistance distribution of the memristor switching is not ideally bistable but can be fitted by Gauss curve; also it contributes to deciphering the unknown conductive mechanisms of memristor with the various types of percolation channel.
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Keywords:
- memristor /
- resistive switching /
- percolation model /
- pristine state analysis
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[1] Yang J J, Inoue I H, Mikolajick T, Hwang C S 2012 MRS Bulletin 37 131
[2] Sawa A 2008 Materials Today 11 28
[3] Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 物理学报 61 217306]
[4] Chua L O 2011 J. Appl. Phys. A 102 765
[5] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[6] Bao B C, Hu W, Xu J P, Liu Z, Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡文, 许建平, 刘中, 邹凌 2011 物理学报 60 120502]
[7] Pershin Y V, Ventra M Di 2012 Proceedings of the IEEE 100 2071
[8] Strukov D B, Alibart F, Williams R S 2012 Appl. Phys. A 106
[9] Fursina A, Sofin R, Shvets I, Natelson D 2009 Phys. Rev. B 79 24
[10] Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M, Hwang C S 2010 Nature Nanotech 5 148
[11] Yang Y C, Gao P, Gaba S, Chang T, Pan X Q, Lu W 2012 Nat. Commun. 3 732
[12] Kim K M, Choi B J, Lee M H, Kim G H, Song S J, Seok J Y, Yoon J H, Han S, Hwang C S 2011 Nanotechnology 22 254010
[13] Yang J J, Strachan J P, Miao F, Zhang M X, Pickett M D, Yi W, Ohlberg D, Medeiros-Ribeiro G, Williams R S 2011 Appl. Phys. A 102 785
[14] Chae S C, Lee J S, Kim S, Lee S B, Chang S H, Liu C, Kahng B, Shin H, Kim D W, Jung C U, Seo S, Lee M J, Noh T W 2008 Adv. Mater. 20 1154
[15] Liu C, Chae S C, Lee J S, Chang S H, Lee S B, Kim D W, Jung C U, Seo S, Ahn S E, Kahng B, Noh T W 2009 J. Phys. D: Appl. Phys. 42 015506
[16] Lee S B, Lee J S, Chang S H, Yoo H K, Kang B S, Kahng B, Lee M J, Kim C J, Noh T W 2011 Appl. Phys. Lett. 98 033502
[17] Shihong M W, Prodromakis T, Salaoru I, Toumazou C, ArXiv: 1206.2746v1 [cond-mat]
[18] Miao F, Yi W, Goldfarb I, Yang J, Zhang M X, Pickett M D, Strachan J P, Medeiros-Ribeiro G, Williams R S 2012 ACS Nano. 6 2312
[19] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[20] Peng H Y, Li Y F, Lin W N, Wang Y Z, Gao X Y, Wu T 2012 Sci. Rep. 2 442
[21] Inoue I H, Yasuda S, Akinaga H, Takagi H, ArXiv: 0702564v1 [cond-mat]
[22] Xu Z T, Jin K J, Gu L, Jin Y L, Ge C, Wang C, Guo H Z, Lu H B, Zhao R Q, Yang G Z 2012 Small. 8 1279
[23] Guo X, Silva S R P, Ishii T 2008 Appl. Phys. Lett. 93 042105
[24] Zezelj M, Stankovi'c I 2012 ArXiv: 1206.0939v2 [cond-mat]
[25] Niemeyer L, Pietronero L, Wiesmann H J 1984 Phys. Rev. Lett. 52 1033
[26] Li J, Ray B, Alam M A, Ostling M 2012 Phys. Rev. E 85 021109
[27] Rozen J, Lopez R, Haglund R F, Feldman L C 2006 Appl. Phys. Lett. 88 081902
[28] Cheianov V V, Fal'koV I, Altshuler B L, Aleiner I L 2007 Phys. Rev. Lett. 99 176801
[29] Zhu X J, Su W J, Liu Y W, Hu B L, Pan L, Lu W, Zhang J D, Li R W 2012 Adv. Mater. 24 3941
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