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声子散射对碳纳米管场效应管(carbon nanotube field effect transistor, CNTFET)的特性有着不可忽略的影响. 传统研究方法基于弹道输运模型来分析发生声子散射时各参数对器件特性的影响, 进而建立CNTFET声子散射模型.为了降低模型复杂度, 提高仿真计算的速度, 本文深入研究了CNTFET的声子散射影响, 对手性、温度和能量三个参数的变化进行了仿真, 分析了参数对器件特性的影响. 采用线性近似拟合的方式建立了一种新的CNTFET声子散射模型.通过分析散射下电流的变化, 验证了该模型的正确性和有效性.与半经典散射模型相比, 该模型由于不需要进行积分计算, 计算过程较为简单, 降低了运算量.Phonon scattering has a non-negligible influence on the characteristics of carbon nanotube field effect transistor (CNTFET). Using the ballistic transport model, the device parameters under phonon scattering are analyzed, and then the CNTFET phonon scattering model is established. To reduce the complexity of this model so that simulation speed can be improved, the effects of phonon scattering is studied through analyzing chirality, temperature and energy, and therefore a new CNTFET phonon scattering model is established with linear approximation. By analyzing the scattering current changes, correctness and validity of the model are demonstrated. The proposed model is easier for calculation and has less computational complexity compared with semi-classical scattering model.
[1] Tans S J, Verschueren A R M, Dekker C 1998 Nature 393 49
[2] Zhou H L, Chi Y Q, Zhang M X, Fang L 2010 Acta Phys. Sin. 59 8104 (in Chinese) [周海亮, 池雅庆, 张民选, 方粮2010 物理学报 59 8104]
[3] Li P J, Zhang W J, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 1054 (in Chinese) [李萍剑, 张文静, 张琦锋, 吴锦雷 2007 物理学报 56 1054]
[4] Deng J, Wong H S P 2007 IEEE Trans. Electron Dev. 54 3186
[5] Zhou X J, Park J Y, Huang S M, Liu J, McEuen P L 2005 Phys. Rev. Lett. 95 146805
[6] Dresselhaus M S, Eklund P C 2000 Adv. Phys. 49 705
[7] Fregonese S, Goguet J, Maneux C, Zimmer T 2009 IEEE Trans. Electron Dev. 56 1184
[8] Guo J, Lundstrom M S 2005 Appl. Phys. Lett. 86 193103
[9] Honincthun H C, Retailleau S G 2005 Appl. Phys. Lett. 87 1112
[10] Koswatta S O, Hasan S, Lundstrom M S, Anantram M P, Nikonov D E 2007 IEEE Trans. Electron Dev. 54 2339
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[1] Tans S J, Verschueren A R M, Dekker C 1998 Nature 393 49
[2] Zhou H L, Chi Y Q, Zhang M X, Fang L 2010 Acta Phys. Sin. 59 8104 (in Chinese) [周海亮, 池雅庆, 张民选, 方粮2010 物理学报 59 8104]
[3] Li P J, Zhang W J, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 1054 (in Chinese) [李萍剑, 张文静, 张琦锋, 吴锦雷 2007 物理学报 56 1054]
[4] Deng J, Wong H S P 2007 IEEE Trans. Electron Dev. 54 3186
[5] Zhou X J, Park J Y, Huang S M, Liu J, McEuen P L 2005 Phys. Rev. Lett. 95 146805
[6] Dresselhaus M S, Eklund P C 2000 Adv. Phys. 49 705
[7] Fregonese S, Goguet J, Maneux C, Zimmer T 2009 IEEE Trans. Electron Dev. 56 1184
[8] Guo J, Lundstrom M S 2005 Appl. Phys. Lett. 86 193103
[9] Honincthun H C, Retailleau S G 2005 Appl. Phys. Lett. 87 1112
[10] Koswatta S O, Hasan S, Lundstrom M S, Anantram M P, Nikonov D E 2007 IEEE Trans. Electron Dev. 54 2339
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