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红光量子点掺杂PVK体系的发光特性研究

刘志民 赵谡玲 徐征 高松 杨一帆

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红光量子点掺杂PVK体系的发光特性研究

刘志民, 赵谡玲, 徐征, 高松, 杨一帆

Luminescence characteristics of PVK doped with red-emitting quantum dots

Liu Zhi-Min, Zhao Su-Ling, Xu Zheng, Gao Song, Yang Yi-Fan
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  • 无热处理制备了红光CdSe/ZnS量子点掺杂PVK的ITO/PVK:QDs/Alq3/Al结构电致发光器件. 测试器件的发光光谱和电学特性等,研究了掺杂浓度(质量分数)对体系发光特性的影响,将非掺杂与掺杂体系做了比较,提出了优化掺杂体系的一些可行方案. 量子点掺杂浓度较低时,主要为Alq3的发光;掺杂浓度为20%时,Alq3的发光得到抑制,红光发射最佳;继续增大掺杂浓度,QDs发光峰发生微弱红移,器件性能变差. 与非掺杂体系相比,掺杂浓度合适的PVK:QDs体系大大提高了器件的稳定性.
    Multilayer electroluminescent devices with a system in which red-emitting quantum dots doped PVK serves as the active layer is fabricated through non-treatment process, the device structure being ITO/PVK:QDs/Alq3/Al. Measuring the emission spectra and electrical characteristics of the devices we study the effect of different QDs doping concentration (mass fraction), and propose some possible solutions to optimize the PVK:QDs system after taking pure QDs for comparison. Experimental results show that changing QDs doping concentration would bring significant impact on the electroluminescence (EL) spectra, current density, brightness, and the stability of devices. When QDs doping concentration is low, we will mainly see the light of Alq3; when QDs doping concentration is 20%, saturated pure red light emission is observed and it is brighter than other devices. However, when the doping concentration is high, a slight red shift occurs in the EL spectra, and the performance of the device gets worse. With a suitable doping concentration, the PVK:QDs may increase the stability of devices.
    • 基金项目: 国家重点基础研究发展计划(973计划)(批准号:2010CB327704)、国家自然科学基金(批准号:51272022)、国家高技术研究发展计划(863计划)(批准号:2013AA032205)、教育部新世纪优秀人才支持计划(批准号:NCET-10-0220)、高等学校博士学科点专项科研基金(批准号:20120009130005,20130009130001)和中央高校基本科研业务费专项资金(批准号:2012JBZ001)资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (Grant No. 2010CB327704), the National Natural Science Foundation of China (Grant No. 51272022), the National High Technology Research and Development Program of China (Grant No. 2013AA032205), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0220), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant Nos. 20120009130005, 20130009130001), and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2012JBZ001).
    [1]

    Colvin V L, Schlamp M C, Alivisatos A 1994 Nature 370 354

    [2]

    Steckel J S, Snee P, Coe-Sullivan S, Zimmer J P, Halpert J E, Anikeeva P, Kim L A, Bulovi V, Bawendi M G 2006 Angew. Chem. Int. Ed. 45 5796

    [3]

    Steckel J S, Zimmer J P, Coe-Sullivan S, Stott N E, Bulovi V, Bawendi M G 2004 Angew. Chem. Int. Ed. 43 2154

    [4]

    O’Connor E, O’Riordan A, Doyle H, Moynihan S, Cuddihy A, Redmond G 2005 Appl. Phys. Lett. 86 201114

    [5]

    Steckel J S, Coe-Sullivan S, Bulovi V, Bawendi M G 2003 Adv. Mater. 15 1862

    [6]

    Bakueva L, Musikhin S, Hines M A, Chang T-WF, Tzolov M, Scholes G D, Sargent E H 2003 Appl. Phys. Lett. 82 2895

    [7]

    Murray C B, Kagan C R, Bawendi M G 1995 Science 270 1335

    [8]

    Lin X M, Jaeger H M, Sorensen C M, Klabunde K J 2001 J. Phys. Chem. B 105 3353

    [9]

    Santhanam V, Andres R P 2004 Nano Lett. 4 41

    [10]

    Dabbousi B O, Murray C B, Rubner M F, Bawendi M G 1994 Chem. Mater. 6 216

    [11]

    Collier C P, Saykally R J, Shiang J J, Henrichs S E, Heath J R 1997 Science 277 1978

    [12]

    Kong Y C, Zhou D Y, Lan Q, Liu J L, Miao Z H, Feng S L, Niu Z C 2003 Chin. Phys. 12 97

    [13]

    Sun Q J, Wang Y A, Li L S, Wang D Y, Zhu T, Xu J, Yang C H, Li Y F 2007 Nat. Photonics 1 717

    [14]

    Gordan K C, Walsh P J, McGale E M 2004 Curr. Appl. Phys. 4 331

    [15]

    Anikeeva P O, Halpert J E, Bawendi M G, Bulovi V 2009 Nano Lett. 9 2532

    [16]

    Wu C C, Wu C I, Sturm J C, Kahn A 1997 Appl. Phys. Lett. 70 1348

    [17]

    Chen W B, Xu Z X, Li K, Chui S Y, Roy V A L, Lai P T, Che C M 2012 Chin. Phys. B 21 78401

    [18]

    Coe-Sullivan S, Steckel J S, Woo W K, Bawendi M G, Bulovi V 2005 Adv. Funct. Mater. 15 1117

    [19]

    Chen B J, Liu S Y 1997 Synth. Met. 91 169

    [20]

    Zhu H N, Xu Z, Zhao S L, Zhang F J, Kong C, Yan G, Gong W 2010 Acta Phys. Sin. 59 8093 (in Chinese)[朱海娜, 徐征, 赵谡玲, 张福俊, 孔超, 闫光, 龚伟 2010 物理学报 59 8093]

    [21]

    Dong W F, Yang Q Q, Li J, Wang Q M, Cui Q, Zhou J M, Huang Q 1996 Chin. Phys. 5 456

    [22]

    Dabbousi B O, Bawendi M G, Onitsuka O, Rubner M F 1995 Appl. Phys. Lett. 66 1316

    [23]

    Nie H, Zhang B, Tang X Z 2007 Chin. Phys. 16 730

  • [1]

    Colvin V L, Schlamp M C, Alivisatos A 1994 Nature 370 354

    [2]

    Steckel J S, Snee P, Coe-Sullivan S, Zimmer J P, Halpert J E, Anikeeva P, Kim L A, Bulovi V, Bawendi M G 2006 Angew. Chem. Int. Ed. 45 5796

    [3]

    Steckel J S, Zimmer J P, Coe-Sullivan S, Stott N E, Bulovi V, Bawendi M G 2004 Angew. Chem. Int. Ed. 43 2154

    [4]

    O’Connor E, O’Riordan A, Doyle H, Moynihan S, Cuddihy A, Redmond G 2005 Appl. Phys. Lett. 86 201114

    [5]

    Steckel J S, Coe-Sullivan S, Bulovi V, Bawendi M G 2003 Adv. Mater. 15 1862

    [6]

    Bakueva L, Musikhin S, Hines M A, Chang T-WF, Tzolov M, Scholes G D, Sargent E H 2003 Appl. Phys. Lett. 82 2895

    [7]

    Murray C B, Kagan C R, Bawendi M G 1995 Science 270 1335

    [8]

    Lin X M, Jaeger H M, Sorensen C M, Klabunde K J 2001 J. Phys. Chem. B 105 3353

    [9]

    Santhanam V, Andres R P 2004 Nano Lett. 4 41

    [10]

    Dabbousi B O, Murray C B, Rubner M F, Bawendi M G 1994 Chem. Mater. 6 216

    [11]

    Collier C P, Saykally R J, Shiang J J, Henrichs S E, Heath J R 1997 Science 277 1978

    [12]

    Kong Y C, Zhou D Y, Lan Q, Liu J L, Miao Z H, Feng S L, Niu Z C 2003 Chin. Phys. 12 97

    [13]

    Sun Q J, Wang Y A, Li L S, Wang D Y, Zhu T, Xu J, Yang C H, Li Y F 2007 Nat. Photonics 1 717

    [14]

    Gordan K C, Walsh P J, McGale E M 2004 Curr. Appl. Phys. 4 331

    [15]

    Anikeeva P O, Halpert J E, Bawendi M G, Bulovi V 2009 Nano Lett. 9 2532

    [16]

    Wu C C, Wu C I, Sturm J C, Kahn A 1997 Appl. Phys. Lett. 70 1348

    [17]

    Chen W B, Xu Z X, Li K, Chui S Y, Roy V A L, Lai P T, Che C M 2012 Chin. Phys. B 21 78401

    [18]

    Coe-Sullivan S, Steckel J S, Woo W K, Bawendi M G, Bulovi V 2005 Adv. Funct. Mater. 15 1117

    [19]

    Chen B J, Liu S Y 1997 Synth. Met. 91 169

    [20]

    Zhu H N, Xu Z, Zhao S L, Zhang F J, Kong C, Yan G, Gong W 2010 Acta Phys. Sin. 59 8093 (in Chinese)[朱海娜, 徐征, 赵谡玲, 张福俊, 孔超, 闫光, 龚伟 2010 物理学报 59 8093]

    [21]

    Dong W F, Yang Q Q, Li J, Wang Q M, Cui Q, Zhou J M, Huang Q 1996 Chin. Phys. 5 456

    [22]

    Dabbousi B O, Bawendi M G, Onitsuka O, Rubner M F 1995 Appl. Phys. Lett. 66 1316

    [23]

    Nie H, Zhang B, Tang X Z 2007 Chin. Phys. 16 730

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出版历程
  • 收稿日期:  2013-12-20
  • 修回日期:  2014-01-20
  • 刊出日期:  2014-05-05

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