衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响

冯秋菊; 许瑞卓; 郭慧颖; 徐坤; 李荣; 陶鹏程; 梁红伟; 刘佳媛; 梅艺赢

doi:10.7498/aps.63.168101

摘要

采用化学气相沉积方法，在无催化剂的条件下，通过改变衬底位置在Si（100）衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉. 测试结果表明，当衬底位于反应源上方1.5 cm处时，所制备的样品为钉状结构，而当衬底位于反应源下方1 cm处时样品为线状结构. 对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究. 此外，在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰. 还对磷掺杂ZnO纳米结构/n-Si异质结I-V 曲线进行了测试，结果表明，该器件具有良好的整流特性，纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.

关键词:

Abstract

One-dimensional phosphorus doped ZnO nanowires and nanonails are prepared on Si substrate without employing any metal catalyst by chemical vapor deposition method. Field-emission scanning electron microscopy shows that the samples located downstream 1.5 cm away from the source material are of nanowire structure and located 1 cm above source materials of nanonail structure, and the growth mechanisms of phosphorus doped ZnO nanostructures with different morphologies are discussed. The photoluminescence properties of phosphorus doped ZnO nanowires and nanonails are studied at a temperature of 10 K. The phosphorus related acceptor emissions are observed. Furthermore, the current-voltage (I-V) measurement based on the ZnO nanostructures/Si heterojunctions shows a typical semiconductor rectification characteristic with positive open electric fields being 4.8 and 3.2 V, respectively.

Keywords:

作者及机构信息

1.
辽宁师范大学物理与电子技术学院, 大连 116029;

2.
大连民族学院理学院预科部, 大连 116600;

3.
大连理工大学物理与光电工程学院, 大连 116024

基金项目: 国家自然科学基金（批准号：10804040，11004020）、辽宁省博士科研启动基金（批准号：20101061）、大连市自然科学基金（批准号：2010J21DW020）和中国科学院空间激光通信及检验技术重点实验室开放基金（批准号：KJJG10-1）资助的课题.

Authors and contacts

1.
School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China;

2.
Preparatory Department, School of Science, Dalian Nationalities University, Dalian 116600, China;

3.
School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 10804040, 11004020), the Doctoral Scientific Research Starting Foundation of Liaoning Province, China (Grant No. 20101061), the Natureal Science Foundation of Dalian, China (Grant No. 2010J21DW020), and the Open Foundation of Key Laboratory of Space Laser Communication and Testing Technology of Chinese Academy of Sciences, China (Grant No. KJJG10-1).

参考文献

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[2]	Feng Q J, Jiang J Y, Tang K, L J Y, Liu Y, Li R, Guo H Y, Xu K, Song Z, Li M K 2013 Acta Phys. Sin. 62 057802 (in Chinese) [冯秋菊, 蒋俊岩, 唐凯, 吕佳音, 刘洋, 李荣, 郭慧颖, 徐坤, 宋哲, 李梦轲 2013 物理学报 62 057802]
[3]	Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 052901]
[4]	Xiang B, Wang P W, Zhang X Z, Dayeh S A, Aplin D P R, Soci C, Yu D P, Wang D L 2007 Nano Lett. 7 323
[5]	Yuan G D, Zhang W J, Jie J S, Fan X, Zapien J A, Leung Y H, Luo L B, Wang P F, Lee C S, Lee S T 2008 Nano Lett. 8 2591
[6]	Liu W, Xiu F X, Sun K, Xie Y H, Wang K L, Wang Y, Zou J, Yang Z, Liu J L 2010 J. Am. Chem. Soc. 132 2498
[7]	Umar A, Hahn Y B 2006 Appl. Phys. Lett. 88 173120
[8]	Li W J, Shi E W, Zhong W Z, Yin Z W 1999 J. Cryst. Growth 203 186
[9]	Fan D H, Zhang R, Wang X H 2010 Physica E 42 2081
[10]	Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liu J L 2005 Appl. Phys. Lett. 87 252102
[11]	Geng C, Jiang Y, Yao Y, Meng X, Zapien J A, Lee C S, Lifshitz Y, Lee S T 2004 Adv. Funct. Mater. 14 589
[12]	Feng Q J, Hu L Z, Liang H W, Feng Y, Wang J, Sun J C, Zhao J Z, Li M K, Dong L 2010 Appl. Surf. Sci. 257 1084
[13]	Shan C X, Liu Z, Hark S K 2008 Appl. Phys. Lett. 92 073103
[14]	Zang C Y, Zang C H, Wang B, Jia Z X, Yue S R, Li Y S, Yang H Q, Zhang Y S 2011 Physica B 406 3479
[15]	Li J C, Li Y F, Yao B, Xu Y, Long S W, Liu L, Zhang Z Z, Zhang L G, Zhao H F, Shen D Z 2013 J. Chem. Phys. 138 034704
[16]	Cao B Q, Lorenz M, Rahm A, von Wenckstern H, Czekalla C, Lenzner J, Benndorf G, Grundmann M 2007 Nanotechnology 18 455707

施引文献

[1]	Chen X M, Gao X Y, Zhang S, Liu H T 2013 Acta Phys. Sin. 62 049102 (in Chinese) [陈先梅, 郜小勇, 张飒, 刘红涛 2013 物理学报 62 049102]
[2]	Feng Q J, Jiang J Y, Tang K, L J Y, Liu Y, Li R, Guo H Y, Xu K, Song Z, Li M K 2013 Acta Phys. Sin. 62 057802 (in Chinese) [冯秋菊, 蒋俊岩, 唐凯, 吕佳音, 刘洋, 李荣, 郭慧颖, 徐坤, 宋哲, 李梦轲 2013 物理学报 62 057802]
[3]	Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 052901]
[4]	Xiang B, Wang P W, Zhang X Z, Dayeh S A, Aplin D P R, Soci C, Yu D P, Wang D L 2007 Nano Lett. 7 323
[5]	Yuan G D, Zhang W J, Jie J S, Fan X, Zapien J A, Leung Y H, Luo L B, Wang P F, Lee C S, Lee S T 2008 Nano Lett. 8 2591
[6]	Liu W, Xiu F X, Sun K, Xie Y H, Wang K L, Wang Y, Zou J, Yang Z, Liu J L 2010 J. Am. Chem. Soc. 132 2498
[7]	Umar A, Hahn Y B 2006 Appl. Phys. Lett. 88 173120
[8]	Li W J, Shi E W, Zhong W Z, Yin Z W 1999 J. Cryst. Growth 203 186
[9]	Fan D H, Zhang R, Wang X H 2010 Physica E 42 2081
[10]	Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liu J L 2005 Appl. Phys. Lett. 87 252102
[11]	Geng C, Jiang Y, Yao Y, Meng X, Zapien J A, Lee C S, Lifshitz Y, Lee S T 2004 Adv. Funct. Mater. 14 589
[12]	Feng Q J, Hu L Z, Liang H W, Feng Y, Wang J, Sun J C, Zhao J Z, Li M K, Dong L 2010 Appl. Surf. Sci. 257 1084
[13]	Shan C X, Liu Z, Hark S K 2008 Appl. Phys. Lett. 92 073103
[14]	Zang C Y, Zang C H, Wang B, Jia Z X, Yue S R, Li Y S, Yang H Q, Zhang Y S 2011 Physica B 406 3479
[15]	Li J C, Li Y F, Yao B, Xu Y, Long S W, Liu L, Zhang Z Z, Zhang L G, Zhao H F, Shen D Z 2013 J. Chem. Phys. 138 034704
[16]	Cao B Q, Lorenz M, Rahm A, von Wenckstern H, Czekalla C, Lenzner J, Benndorf G, Grundmann M 2007 Nanotechnology 18 455707

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