基于Mueller矩阵椭偏仪的纳米压印模板与光刻胶光栅结构准确测量

陈修国; 刘世元; 张传维; 吴懿平; 马智超; 孙堂友; 徐智谋

doi:10.7498/aps.63.180701

摘要

在纳米压印工艺中，对模板和压印结构的几何参数进行快速、低成本、非破坏性地准确测量具有非常重要的意义. 与传统光谱椭偏仪只能改变波长和入射角2个测量条件并且在每一组测量条件下只能获得振幅比和相位差2个测量参数相比，Mueller矩阵椭偏仪可以改变波长、入射角和方位角3个测量条件，而且在每一组测量条件下都可以获得一个4×4阶Mueller矩阵共16个参数，因此可以获得更为丰富的测量信息. 通过选择合适的测量条件配置，充分利用Mueller矩阵中的测量信息，有望实现更为准确的纳米结构测量. 基于此，本文利用自主研制的Mueller矩阵椭偏仪对硅基光栅模板和纳米压印光刻胶光栅结构进行了测量. 实验结果表明，通过对Mueller矩阵椭偏仪进行测量条件优化配置，并且在光学特性建模时考虑测量过程中出现的退偏效应，可以实现压印工艺中纳米结构线宽、线高、侧壁角以及残胶厚度等几何参数更为准确的测量，同时对于纳米压印光刻胶光栅结构还可以直接得到光斑照射区域内残胶厚度的不均匀性参数.

关键词:

Abstract

In order to control nanoimprint lithography (NIL) processes for achieving good fidelity, the fast, low-cost, non-destructive and accurate measurement of geometric parameters of templates and imprinted grating structures is of great importance. Compared with conventional ellipsometric scatterometry, which only obtains two ellipsometric angles and has 2 changeable measurement conditions, i.e., the wavelength and the incidence angle, Mueller matrix ellipsometry (MME) can provide up to 16 quantities of a 4×4 Mueller matrix in each measurement with 3 changeable measurement conditions, i.e., the wavelength, the incidence angle and the azimuthal angle. Therefore, MME can acquire much more useful information about the sample. It is expected that much more accurate measurements of nanostructures can be achieved by choosing proper measurement configurations and completely using the rich information hidden in the measured Mueller matrices. Accordingly, the templates and imprinted grating structures in NIL processes are measured using an in-house developed Mueller matrix ellipsometer. We experimentally demonstrate that more accurate quantification of geometric parameters, such as line width, line height, sidewall angle and residual layer thickness, can be achieved by performing MME measurements in the optimal configuration and meanwhile by incorporating depolarization effects into the optical model. Moreover, as for the imprinted grating structures, the residual layer thickness variation over the illumination spot can also be directly determined by MME. The comparison between MME-extracted template and imprinted resist profiles also indicates an excellent fidelity of the nanoimprint pattern transfer process.

Keywords:

作者及机构信息

1.
华中科技大学, 数字制造装备与技术国家重点实验室, 武汉 430074;

2.
华中科技大学材料科学与工程学院, 武汉 430074;

3.
华中科技大学光学与电子信息学院, 武汉 430074

基金项目: 国家自然科学基金（批准号：91023032，51005091）、国家重大科学仪器设备开发专项（批准号：2011YQ160002）和教育部长江学者和创新团队发展计划资助的课题.

Authors and contacts

1.
State Key Laboratory for Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;

2.
College of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;

3.
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 91023032, 51005091), the National Instrument Development Specific Project of China (Grant No. 2011YQ160002), and the Program for Changjiang Scholars and Innovative Research Team in University of China.

参考文献

[1]	Chou S Y, Krauss P R, Renstrom P J 1996 Science 272 85
[2]	Chou S Y, Krauss P R, Zhang W, Guo L, Zhuang L 1997 J. Vac. Sci. Technol. B 15 2897
[3]	Fuard D, Perret C, Farys V, Gourgon C, Schiavone P 2005 J. Vac. Sci. Technol. B 23 3069
[4]	Patrick H J, Germer T A, Ding Y F, Ro H W, Richter L J, Soles C L 2008 Appl. Phys. Lett. 93 233015
[5]	Yu Z N, Hwu J, Liu Y D, Su Z P, Yang H, Wang H Y, Hu W, Xu Y, Kurataka N, Hsu Y, Lee S, Gauzner G, Lee K, Kuo D 2010 J. Vac. Sci. Technol. B 28 C6M130
[6]	Ma Z C, Xu Z M, Peng J, Sun T Y, Chen X G, Zhao W N, Liu S S, Wu X H, Zou C, Liu S Y 2014 Acta Phys. Sin. 63 039101(in Chinese)[马智超, 徐智谋, 彭静, 孙堂友, 陈修国, 赵文宁, 刘思思, 武兴会, 邹超, 刘世元 2014 物理学报 63 039101]
[7]	Azzam R M A, Bashara N M 1977 Ellipsometry and Polarized Light (Amsterdam: North-Holland)
[8]	Chen L Y, Hou X Y, Huang D M, Zhang F L, Feng X W, Yang M, Su Y, Qian Y H, Wang X 1994 Chin. Phys. 3 595
[9]	Zhang X J, Ma H L, Li Y X, Wang Q P, Ma J, Zong F J, Xiao H D 2006 Chin. Phys. 15 2385
[10]	Zhang T, Yin J, Ding L H, Zhang W F 2013 Chin. Phys. B 22 117801
[11]	Huang H T, Kong W, Terry Jr F L 2001 Appl. Phys. Lett. 78 3983
[12]	Niu X, Jakatdar N, Bao J W, Spanos C J 2001 IEEE Trans. Semicond. Manuf. 14 97
[13]	Silver R, Germer T, Attota R, Barnes B M, Bundary B, Allgair J, Marx E, Jun J 2007 Proc. SPIE 6518 65180U
[14]	Novikova T, De Martino A, Hatit S B, Drévillon B 2006 Appl. Opt. 45 3688
[15]	Li J, Hwu J J, Liu Y D, Rabello S, Liu Z, Hu J T 2010 J. Micro Nanolith. MEMS MOEMS 9 041305
[16]	Chen X G, Liu S Y, Zhang C W, Jiang H 2013 J. Micro Nanolith. MEMS MOEMS 12 033013
[17]	Chen X G, Zhang C W, Liu S Y 2013 Appl. Phys. Lett. 103 151605
[18]	Chen X G, Liu S Y, Zhang C W, Jiang H, Ma Z C, Sun T Y, Xu Z M 2014 Opt. Express 22 15165
[19]	Collins R W, Koh J 1999 J. Opt. Soc. Am. A 16 1997
[20]	Liu S Y, Chen X G, Zhang C W 2014 ECS Trans. 60 237
[21]	Fujiwara H 2007 Spectroscopic Ellipsometry: Principles and Applications (New York: Wiley)
[22]	Liu S Y 2014 J. Mech. Eng. 50 1(in Chinese)[刘世元 2014 机械工程学报 50 1]
[23]	Moharam M G, Grann E B, Pommet D A, Gaylord T K 1995 J. Opt. Soc. Am. A 12 1068
[24]	Li L F 1997 J. Opt. Soc. Am. A 14 2758
[25]	Liu S Y, Ma Y, Chen X G, Zhang C W 2012 Opt. Eng. 51 081504
[26]	Chen X G 2013 Ph. D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese)[陈修国 2013 博士学位论文 (武汉: 华中科技大学)]
[27]	Gil J J, Bernabeu E 1986 Opt. Acta 33 185
[28]	van de Hulst H C 1957 Light Scattering by Small Particles (New York: Wiley)
[29]	Zhang C W, Liu S Y, Shi T L, Tang Z R 2009 J. Opt. Soc. Am. A 26 2327
[30]	Chen X G, Liu S Y, Zhang C W, Zhu J L 2013 Measurement 46 2638
[31]	Chen X G, Liu S Y, Zhang C W, Jiang H 2013 Appl. Opt. 52 6727
[32]	Zhang Z, Xu Z M, Sun T Y, He J, Xu H F, Zhang X M, Liu S Y 2013 Acta Phys. Sin. 62 168102(in Chinese)[张铮, 徐智谋, 孙堂友, 何健, 徐海峰, 张学明, 刘世元 2013 物理学报 62 168102]
[33]	Peng J, Xu Z M, Wu X F, Sun T Y 2013 Acta Phys. Sin. 62 036104(in Chinese)[彭静, 徐智谋, 吴小峰, 孙堂友 2013 物理学报 62 036104]
[34]	Herzinger C M, Johs B, McGahan W A, Woollam J A, Paulson W 1998 J. Appl. Phys. 83 3323
[35]	Forouhi A R, Bloomer I 1988 Phys. Rev. B 38 1865
[36]	Pochi Y 2005 Optical Waves in Layered Media (New York: Wiley)
[37]	Chen X G, Liu S Y, Gu H G, Zhang C W 2014 Thin Solid Films, doi: 10.1016/j.tsf.2014.01.049

施引文献

[1]	Chou S Y, Krauss P R, Renstrom P J 1996 Science 272 85
[2]	Chou S Y, Krauss P R, Zhang W, Guo L, Zhuang L 1997 J. Vac. Sci. Technol. B 15 2897
[3]	Fuard D, Perret C, Farys V, Gourgon C, Schiavone P 2005 J. Vac. Sci. Technol. B 23 3069
[4]	Patrick H J, Germer T A, Ding Y F, Ro H W, Richter L J, Soles C L 2008 Appl. Phys. Lett. 93 233015
[5]	Yu Z N, Hwu J, Liu Y D, Su Z P, Yang H, Wang H Y, Hu W, Xu Y, Kurataka N, Hsu Y, Lee S, Gauzner G, Lee K, Kuo D 2010 J. Vac. Sci. Technol. B 28 C6M130
[6]	Ma Z C, Xu Z M, Peng J, Sun T Y, Chen X G, Zhao W N, Liu S S, Wu X H, Zou C, Liu S Y 2014 Acta Phys. Sin. 63 039101(in Chinese)[马智超, 徐智谋, 彭静, 孙堂友, 陈修国, 赵文宁, 刘思思, 武兴会, 邹超, 刘世元 2014 物理学报 63 039101]
[7]	Azzam R M A, Bashara N M 1977 Ellipsometry and Polarized Light (Amsterdam: North-Holland)
[8]	Chen L Y, Hou X Y, Huang D M, Zhang F L, Feng X W, Yang M, Su Y, Qian Y H, Wang X 1994 Chin. Phys. 3 595
[9]	Zhang X J, Ma H L, Li Y X, Wang Q P, Ma J, Zong F J, Xiao H D 2006 Chin. Phys. 15 2385
[10]	Zhang T, Yin J, Ding L H, Zhang W F 2013 Chin. Phys. B 22 117801
[11]	Huang H T, Kong W, Terry Jr F L 2001 Appl. Phys. Lett. 78 3983
[12]	Niu X, Jakatdar N, Bao J W, Spanos C J 2001 IEEE Trans. Semicond. Manuf. 14 97
[13]	Silver R, Germer T, Attota R, Barnes B M, Bundary B, Allgair J, Marx E, Jun J 2007 Proc. SPIE 6518 65180U
[14]	Novikova T, De Martino A, Hatit S B, Drévillon B 2006 Appl. Opt. 45 3688
[15]	Li J, Hwu J J, Liu Y D, Rabello S, Liu Z, Hu J T 2010 J. Micro Nanolith. MEMS MOEMS 9 041305
[16]	Chen X G, Liu S Y, Zhang C W, Jiang H 2013 J. Micro Nanolith. MEMS MOEMS 12 033013
[17]	Chen X G, Zhang C W, Liu S Y 2013 Appl. Phys. Lett. 103 151605
[18]	Chen X G, Liu S Y, Zhang C W, Jiang H, Ma Z C, Sun T Y, Xu Z M 2014 Opt. Express 22 15165
[19]	Collins R W, Koh J 1999 J. Opt. Soc. Am. A 16 1997
[20]	Liu S Y, Chen X G, Zhang C W 2014 ECS Trans. 60 237
[21]	Fujiwara H 2007 Spectroscopic Ellipsometry: Principles and Applications (New York: Wiley)
[22]	Liu S Y 2014 J. Mech. Eng. 50 1(in Chinese)[刘世元 2014 机械工程学报 50 1]
[23]	Moharam M G, Grann E B, Pommet D A, Gaylord T K 1995 J. Opt. Soc. Am. A 12 1068
[24]	Li L F 1997 J. Opt. Soc. Am. A 14 2758
[25]	Liu S Y, Ma Y, Chen X G, Zhang C W 2012 Opt. Eng. 51 081504
[26]	Chen X G 2013 Ph. D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese)[陈修国 2013 博士学位论文 (武汉: 华中科技大学)]
[27]	Gil J J, Bernabeu E 1986 Opt. Acta 33 185
[28]	van de Hulst H C 1957 Light Scattering by Small Particles (New York: Wiley)
[29]	Zhang C W, Liu S Y, Shi T L, Tang Z R 2009 J. Opt. Soc. Am. A 26 2327
[30]	Chen X G, Liu S Y, Zhang C W, Zhu J L 2013 Measurement 46 2638
[31]	Chen X G, Liu S Y, Zhang C W, Jiang H 2013 Appl. Opt. 52 6727
[32]	Zhang Z, Xu Z M, Sun T Y, He J, Xu H F, Zhang X M, Liu S Y 2013 Acta Phys. Sin. 62 168102(in Chinese)[张铮, 徐智谋, 孙堂友, 何健, 徐海峰, 张学明, 刘世元 2013 物理学报 62 168102]
[33]	Peng J, Xu Z M, Wu X F, Sun T Y 2013 Acta Phys. Sin. 62 036104(in Chinese)[彭静, 徐智谋, 吴小峰, 孙堂友 2013 物理学报 62 036104]
[34]	Herzinger C M, Johs B, McGahan W A, Woollam J A, Paulson W 1998 J. Appl. Phys. 83 3323
[35]	Forouhi A R, Bloomer I 1988 Phys. Rev. B 38 1865
[36]	Pochi Y 2005 Optical Waves in Layered Media (New York: Wiley)
[37]	Chen X G, Liu S Y, Gu H G, Zhang C W 2014 Thin Solid Films, doi: 10.1016/j.tsf.2014.01.049

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