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高能电子照射绝缘样品的泄漏电流特性

李维勤 刘丁 张海波

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高能电子照射绝缘样品的泄漏电流特性

李维勤, 刘丁, 张海波

Leakage current characteristics of the insulating sample under high-energy electron irradiation

Li Wei-Qin, Liu Ding, Zhang Hai-Bo
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  • 建立了考虑电子散射、输运、俘获和自洽场的数值计算模型, 研究了高能电子束照射下绝缘厚样品的泄漏电流特性, 并采用一个实验平台测量了泄漏电流. 结果表明: 在电子束持续照射下, 电子总产额会下降; 由于电子在样品内部的输运, 样品近表面呈现微弱的正带电, 在样品内部呈现较强的负带电; 样品内部电子会向下输运形成电子束感生电流, 长时间照射下会形成泄漏电流; 随着照射, 泄漏电流逐渐增大并趋于稳定值; 泄漏电流随样品厚度的增大而减小, 随电子束能量、电子束电流的增大而增大.
    The leakage current characteristics of an insulating sample under high-energy electron beam irradiation are simulated by a numerical model with taking into account the electron scattering, transport, trapping and self-consistent field.The leakage current is measured by using a detection platform. Results show that under the continuous electron beam irradiation, the total electron yield decreases evidently; because of electron transport, the sample near the surface is positively charged weakly and its interior is negatively charged strongly; some electrons are transported downward, forming the electron beam induced current and the leakage current under the long time irradiation. Under the irradiation, the leakage current increases to a stable level gradually. The leakage current decreases with the increase of sample thickness, but it increases with beam energy and current.
    • 基金项目: 国家自然科学基金(批准号:11175140)和陕西省自然科学基金项目(批准号:2013JM8001)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11175140), and the Scientific Research Program Funded by Shaanxi Province, China (Grant No. 2013JM8001).
    [1]

    Abe H, Babin S, Borisov S, Hamaguchi A, Kadowaki M, Miyano Y, Yamazaki Y 2009 J. Vac. Sci. Technol. B 27 1039

    [2]

    Joo J, Chow B Y, Jacobson J M 2006 Nano Lett. 6 2021

    [3]

    Paulmier T, Dirassen B, Payan D, Eesbeek M V 2009 IEEE Trans. Dielect. Elect. El. In. 16 682

    [4]

    Huang J G, Han J W 2010 Acta Phys. Sin. 59 2907 (in Chinese) [黄建国, 韩建伟 2010 物理学报 59 2907]

    [5]

    Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 物理学报 58 684]

    [6]

    Sessler G M, Figueiredo M T, Ferreira G F L 2004 IEEE Trans. Dielect. El. In. 11 192

    [7]

    O'Shea A, Wallace J, Hummel M Strauss L H, Kidd T E 2013 Micron 52-53 57

    [8]

    Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128

    [9]

    Zhang X, Liu B W, Zhao Y, Li C B, Xia Y 2013 Chin. Phys. B 22 127303

    [10]

    Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58

    [11]

    Cornet N, Goeuriot D 2008 J. Appl. Phys. 103 064110

    [12]

    Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901

    [13]

    Taylor D M, Mehdi Q H 1979 J. Phys. D 12 2253

    [14]

    Li W Q, Zhang H B 2010 Micron 41 416

    [15]

    Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostat. 67 695

    [16]

    Rau E I 2008 Appl. Surf. Sci. 254 2110

    [17]

    Li W Q, Mu K, Xia R H 2011 Micron 42 443

    [18]

    Wang C H, Li W Q, Zhang H B 2014 Acta Electr. Sin. 42 144 (in Chinese) [汪春华, 李维勤, 张海波 2014 电子学报 42 144]

    [19]

    Li W Q, Zhang H B, Lu J 2012 Acta Phys. Sin. 61 027302 (in Chinese) [李维勤, 张海波, 鲁君 2012 物理学报 61 027302]

    [20]

    Joy D C 1995 Monte-Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press)

    [21]

    Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901

    [22]

    Mao S F, Ding Z J 2010 Surf. Interf. Anal. 42 1096

    [23]

    Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310

    [24]

    Desalvot A, Rosa R 1987 J. Phys. D 20 790

    [25]

    Penn D R 1987 Phys. Rev. B 35 482

    [26]

    Dapor M, Calliari L, Filippi M 2008 Surf. Interf. Anal. 40 683

    [27]

    Touzin M, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Fitting H J 2006 J. Appl. Phys. 99 114110

  • [1]

    Abe H, Babin S, Borisov S, Hamaguchi A, Kadowaki M, Miyano Y, Yamazaki Y 2009 J. Vac. Sci. Technol. B 27 1039

    [2]

    Joo J, Chow B Y, Jacobson J M 2006 Nano Lett. 6 2021

    [3]

    Paulmier T, Dirassen B, Payan D, Eesbeek M V 2009 IEEE Trans. Dielect. Elect. El. In. 16 682

    [4]

    Huang J G, Han J W 2010 Acta Phys. Sin. 59 2907 (in Chinese) [黄建国, 韩建伟 2010 物理学报 59 2907]

    [5]

    Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 物理学报 58 684]

    [6]

    Sessler G M, Figueiredo M T, Ferreira G F L 2004 IEEE Trans. Dielect. El. In. 11 192

    [7]

    O'Shea A, Wallace J, Hummel M Strauss L H, Kidd T E 2013 Micron 52-53 57

    [8]

    Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128

    [9]

    Zhang X, Liu B W, Zhao Y, Li C B, Xia Y 2013 Chin. Phys. B 22 127303

    [10]

    Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58

    [11]

    Cornet N, Goeuriot D 2008 J. Appl. Phys. 103 064110

    [12]

    Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901

    [13]

    Taylor D M, Mehdi Q H 1979 J. Phys. D 12 2253

    [14]

    Li W Q, Zhang H B 2010 Micron 41 416

    [15]

    Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostat. 67 695

    [16]

    Rau E I 2008 Appl. Surf. Sci. 254 2110

    [17]

    Li W Q, Mu K, Xia R H 2011 Micron 42 443

    [18]

    Wang C H, Li W Q, Zhang H B 2014 Acta Electr. Sin. 42 144 (in Chinese) [汪春华, 李维勤, 张海波 2014 电子学报 42 144]

    [19]

    Li W Q, Zhang H B, Lu J 2012 Acta Phys. Sin. 61 027302 (in Chinese) [李维勤, 张海波, 鲁君 2012 物理学报 61 027302]

    [20]

    Joy D C 1995 Monte-Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press)

    [21]

    Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901

    [22]

    Mao S F, Ding Z J 2010 Surf. Interf. Anal. 42 1096

    [23]

    Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310

    [24]

    Desalvot A, Rosa R 1987 J. Phys. D 20 790

    [25]

    Penn D R 1987 Phys. Rev. B 35 482

    [26]

    Dapor M, Calliari L, Filippi M 2008 Surf. Interf. Anal. 40 683

    [27]

    Touzin M, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Fitting H J 2006 J. Appl. Phys. 99 114110

计量
  • 文章访问数:  4225
  • PDF下载量:  457
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-06-04
  • 修回日期:  2014-07-08
  • 刊出日期:  2014-11-05

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