GaN基高压发光二极管理想因子与单元个数关系研究

白俊雪; 郭伟玲; 孙捷; 樊星; 韩禹; 孙晓; 徐儒; 雷珺

doi:10.7498/aps.64.017303

摘要

理想因子能够反映电流、载流子泄漏以及缺陷导致的非辐射复合等现象. 针对目前报道的GaN基发光二极管的理想因子的问题, 通过对高压发光二极管I-V曲线的拟合计算出了理想因子n的数值, 分别讨论了12 V, 19 V, 51 V 和80 V GaN基高压发光二极管的理想因子与其结构中串联晶粒个数的关系, 分析了理想因子大小与光谱半高宽(FWHM)的变化关系. 另外, 还对电流拥挤效应对理想因子的影响进行了分析. 结果表明: 高压发光二极管理想因子n随串联晶粒个数的增加几乎为线性规律增加, 高压发光二极管理想因子n是由其串联单元理想因子之和构成的. 这对GaN基高压发光二极管理想因子的研究具有参考价值.

关键词:

Abstract

Ideality factor can reflect the current, the carrier leakage, and the phenomenon of non-radiative recombination in light-emitting diode (LED). For the problem of ideality factor from current report about GaN-based LED, the value of ideality factor n is calculated by using the I-V curve fitting of high voltage LED. And the relationship between the ideality factor and the number of units is series in 12, 19, 51 and 80 V GaN-based high-voltage LED are discussed. In addition, the relationship between ideality factor and spectral half width (FWHM) is analyzed, and the impact of current crowding effect on the ideality factor is also studied. Results show that the ideality factor n increases nearly linearly with the number of units in series, indicating that the ideality factor n of high voltage LED is composed of its series units. It is a valuable result for understanding the ideality factor of GaN-based high voltage LED.

Keywords:

作者及机构信息

1.
北京工业大学光电子技术省部共建教育部重点实验室, 北京 100124

基金项目: 国家科技支撑计划(批准号: 2011BAE01B14)资助的课题.

Authors and contacts

1.
Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China

Funds: Project supported by the National Key Technologies R&D Program (Grant No.2011BAE01B14).

参考文献

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施引文献

[1]	Liu J B, Li P X, Hao Y 2005 Chinese Journal of Quantum Electronics 22 673 (in Chinese) [刘坚斌, 李培咸, 郝跃 2005 量子电子学报 22 673]
[2]	Shah J M, Li Y L, Gessmann T, Schubert E F 2003 Journal of Applied Physics 94 2627
[3]	Chitnis A, Kumar A, Shatalov M 2000 Appl. Phys. Lett. 77 3800
[4]	Casey H C, Muth J, Krishnankutty S 1996 Appl. Phys. Lett. 68 2867
[5]	Guo W L, Yan W W, Zhu Y X, Liu J P, Ding Y, Cui D S, Wu G Q 2012 Chin. Phys. B 12 440
[6]	Sah C T, Noyce R, Shockley W 2009 Proceedings of the IRE 45 1957
[7]	Liu W H, Li Y Q, Fang W Q, Zhou M X, Liu H C, Mo C L, Wang L, Jiang F Y 2006 Journal of Functional Materials and Devices 01 45 (in Chinese) [刘卫华, 李有群, 方文卿, 周毛兴, 刘和初, 莫春兰, 王立, 江风益 2006 功能材料与器件学报 01 45]
[8]	Liu S W, Guo X, Ai W W, Song Y P, Gu X L, Zhang L, Shen G D 2006 Semiconductor Opto electronics 03 240
[9]	Perlin P, Osinski M, Eliseev P G 1996 Appl. Phys. Let. 69 1680
[10]	Zhuang W, Wen J, Wen Y M, Li P, Zhu Y 2011 Journal of Ptoelectronics·Laser 09 1290 (in Chinese) [庄伟, 文静, 文玉梅, 李平, 朱永. 2011 光电子·激光 09 1290]
[11]	Malyutenko V K, Bolgov S S 2010 Proc. SPIE 7617
[12]	Wen J, Zhuang W, Wen Y M, Li P, Zhao X M, Ma Y D 2011 Chinese Journal of Luminescence 32 1057 (in Chinese) [文静, 庄伟, 文玉梅, 李平, 赵学梅, 马跃东 2011 发光学报 32 1057]
[13]	Yan, Lu D, Chen H, Zhang D J, Zheng R, You D 2010 Appl. Phys. Lett. 96 083504
[14]	Shen X C 2006 Semiconductor spectra and optical properties (Beijing: Science Press) p277 (in Chinese) [沈学础2006半导体光谱和光学性质(北京: 科学出版社)第277页]

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