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质子辐照导致科学级电荷耦合器件电离效应和位移效应分析

文林 李豫东 郭旗 任迪远 汪波 玛丽娅

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质子辐照导致科学级电荷耦合器件电离效应和位移效应分析

文林, 李豫东, 郭旗, 任迪远, 汪波, 玛丽娅

Analysis of ionizing and department damage mechanism in proton-irradiation-induced scientific charge-coupled device

Wen Lin, Li Yu-Dong, Guo Qi, Ren Di-Yuan, Wang Bo, Maria
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  • 针对卫星轨道上的空间环境辐射引起电子元器件参数退化问题, 为了研究光电器件空间辐射效应、损伤机理以及参数退化规律, 对某国产埋沟科学级电荷耦合器件(charge-coupled devices, CCD)进行了10 MeV质子辐照试验、退火试验及辐射效应理论模型研究. 试验过程中重点考察了器件的暗信号和电荷转移效率特性的变化. 试验结果表明, 器件的主要性能参数随着质子辐照注量的增大明显退化, 在退火过程中这些参数均有不同程度的恢复. 通过对CCD敏感参数退化规律及其与器件工艺、结构的相关性进行分析, 并根据半导体器件辐射效应理论, 推导了器件敏感参数随质子辐照注量变化的理论模型, 得到了暗信号及电荷转移效率随辐照注量退化的半经验公式. 上述工作可为深入开展CCD抗辐射性能预测、抗辐射工艺改进与结构优化提供重要参考.
    A sort of homemade buried scientific charge-coupled device (CCD) is injected by 10 MeV protons, and measurements are carried out primarily on change of dark signal, charge transfer efficiency. Results show that parameters of CCD presented significantly decrease. Post-irradiation annealing is implemented and the results revel that CCD parameters recover to different extents. In this paper, analysed are the mechanism for the decrease of CCD parameters, and their dependences on process and structure in manufacture. The results above will provide helpful reference in characterization evaluation and technique development of future CCD.
    • 基金项目: 国家自然科学基金(批准号: 11005152)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11005152).
    [1]

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    [2]

    Meidinger N, Struder L, Holl P, Soltau H, Zanthier C V 1996 Nucl. Instrum. Methods Phys. Res. A 377 298

    [3]

    Bebek C J, Groom D E, Holland S E, Karcher A, Kolbe W F, Palaio N P, Turko B T, Wang G 2004 Astropartical, Partical and Space Physics, Detectors and Medical Physics Applications 608B

    [4]

    Jin J, Wang X Q, Lin S, Song N F 2012 Chin. Phys. B 21 094220

    [5]

    Liu C M, Li X J, Geng H B, Rui E M, Guo L X, Yang J Q 2012 Chin. Phys. B 21 104211

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    Hopkinson G R, Dale C J, Marshall P W 1996 IEEE Trans. Nucl. Sci. 43 614

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    Wang Z J, Liu Y N, Chen W, Tang B Q, Xiao Z G, Liu M B, Huang S Y, Zhang Y 2010 J. Tsinghua Univ. (Science and Technology) 50 1484 (in Chinese) [王祖军, 刘以农, 陈伟, 唐本奇, 肖志刚, 刘敏波, 黄绍艳, 张勇 2010 清华大学学报 (自然科学版) 50 1484]

    [8]

    Li P W, Guo Q, Ren D Y, Yu Y, Wang Y Y, Gao B 2010 Atom. Energy Sci. Technol. 44 124 (in Chinese) [李鹏伟, 郭旗, 任迪远, 于跃, 王义元, 高博 2010 原子能科学技术 44 124]

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    Li P W, Guo Q, Ren D Y, Yu Y, Lan B, Li M S 2010 Atom. Energy Sci. Technol. 44 603 (in Chinese) [李鹏伟, 郭旗, 任迪远, 于跃, 兰博, 李茂顺 2010 原子能科学技术 44 603]

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    Schrimpf R D, Fleedwood D M 2004 Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices (Singapore: World Scientific Publishing Co. Pte. Ltd.) pp135-144

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    Killiany J M 1978 IEEE Trans. Nucl. Sci. 1 353

    [12]

    Sun P, Du L, Chen W H, He L, Zhang X F 2012 Acta Phys. Sin. 61 107803 (in Chinese) [孙鹏, 杜磊, 陈文豪, 何亮, 张晓芳 2012 物理学报 61 107803]

    [13]

    Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华, 杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 物理学报 58 4090]

    [14]

    Hopkinson G R, Mohammadzadeh 2004 Int. J. High Speed Electron. Syst. 14 419

    [15]

    Wood S 1981 IEEE Trans. Nucl. Sci. 28 4107

    [16]

    Mohsen A M, Tompsett M F 1974 IEEE Tran. Electron Dev. 21 701

    [17]

    Bi J S, Han Z S, Zhang E X, McCurdy M, Reed R A, Schrimpf R D, Fleetwood D M, Alles M L, Weller R A, Linten D, Jurczak M, Fantini A 2013 IEEE Tran. Electron Dev. 60 4540

    [18]

    Greenlee J D, Shank J C, Compagnoni J L, Tellekamp M B, Zhang E X, Bi J S, Fleetwood D M, Alles M L, Schrimpf R D, Doolittle W A 1974 IEEE Tran. Electron Dev. 60 4555

  • [1]

    Chugg A M, Jones R, Moutrie M J, Truscott P R 2004 IEEE Trans. Nucl. Sci. 51 3579

    [2]

    Meidinger N, Struder L, Holl P, Soltau H, Zanthier C V 1996 Nucl. Instrum. Methods Phys. Res. A 377 298

    [3]

    Bebek C J, Groom D E, Holland S E, Karcher A, Kolbe W F, Palaio N P, Turko B T, Wang G 2004 Astropartical, Partical and Space Physics, Detectors and Medical Physics Applications 608B

    [4]

    Jin J, Wang X Q, Lin S, Song N F 2012 Chin. Phys. B 21 094220

    [5]

    Liu C M, Li X J, Geng H B, Rui E M, Guo L X, Yang J Q 2012 Chin. Phys. B 21 104211

    [6]

    Hopkinson G R, Dale C J, Marshall P W 1996 IEEE Trans. Nucl. Sci. 43 614

    [7]

    Wang Z J, Liu Y N, Chen W, Tang B Q, Xiao Z G, Liu M B, Huang S Y, Zhang Y 2010 J. Tsinghua Univ. (Science and Technology) 50 1484 (in Chinese) [王祖军, 刘以农, 陈伟, 唐本奇, 肖志刚, 刘敏波, 黄绍艳, 张勇 2010 清华大学学报 (自然科学版) 50 1484]

    [8]

    Li P W, Guo Q, Ren D Y, Yu Y, Wang Y Y, Gao B 2010 Atom. Energy Sci. Technol. 44 124 (in Chinese) [李鹏伟, 郭旗, 任迪远, 于跃, 王义元, 高博 2010 原子能科学技术 44 124]

    [9]

    Li P W, Guo Q, Ren D Y, Yu Y, Lan B, Li M S 2010 Atom. Energy Sci. Technol. 44 603 (in Chinese) [李鹏伟, 郭旗, 任迪远, 于跃, 兰博, 李茂顺 2010 原子能科学技术 44 603]

    [10]

    Schrimpf R D, Fleedwood D M 2004 Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices (Singapore: World Scientific Publishing Co. Pte. Ltd.) pp135-144

    [11]

    Killiany J M 1978 IEEE Trans. Nucl. Sci. 1 353

    [12]

    Sun P, Du L, Chen W H, He L, Zhang X F 2012 Acta Phys. Sin. 61 107803 (in Chinese) [孙鹏, 杜磊, 陈文豪, 何亮, 张晓芳 2012 物理学报 61 107803]

    [13]

    Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华, 杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 物理学报 58 4090]

    [14]

    Hopkinson G R, Mohammadzadeh 2004 Int. J. High Speed Electron. Syst. 14 419

    [15]

    Wood S 1981 IEEE Trans. Nucl. Sci. 28 4107

    [16]

    Mohsen A M, Tompsett M F 1974 IEEE Tran. Electron Dev. 21 701

    [17]

    Bi J S, Han Z S, Zhang E X, McCurdy M, Reed R A, Schrimpf R D, Fleetwood D M, Alles M L, Weller R A, Linten D, Jurczak M, Fantini A 2013 IEEE Tran. Electron Dev. 60 4540

    [18]

    Greenlee J D, Shank J C, Compagnoni J L, Tellekamp M B, Zhang E X, Bi J S, Fleetwood D M, Alles M L, Schrimpf R D, Doolittle W A 1974 IEEE Tran. Electron Dev. 60 4555

计量
  • 文章访问数:  5764
  • PDF下载量:  516
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-06-26
  • 修回日期:  2014-07-25
  • 刊出日期:  2015-01-05

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