搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

磁电异质结及器件应用

杨娜娜 陈轩 汪尧进

引用本文:
Citation:

磁电异质结及器件应用

杨娜娜, 陈轩, 汪尧进

Magnetoelectric heterostructure and device application

Yang Na-Na, Chen Xuan, Wang Yao-Jin
PDF
导出引用
  • 磁电异质结是由铁磁和铁电材料通过连接层耦合而成,其磁电效应来源于铁电相的压电效应和铁磁相的磁致伸缩效应.相对于颗粒混相磁电复合材料,层状磁电异质结材料具有更高的磁电耦合系数和更低的介电损耗,使得其在磁场传感器、能量收集器、天线以及存储器等领域都有着巨大的应用前景.本综述重点总结了磁电异质结材料的发展历程以及相关应用领域的最新进展,最后评述了磁电异质结材料发展的挑战和前景展望.
    The magnetoelectric (ME) heterostructure is composed of ferromagnetic and ferroelectric materials. The heterostructural ME effect originates from piezoelectric effect in the ferroelectric component and magnetostrictive effect in the ferromagnetic component. The magnetoelectric heterostructure has higher magnetoelectric coupling coefficient and lower dielectric loss than the particulate composites, and thus leading to several promising applications such as in the magnetic field sensors, the energy harvesters, antenna and memory devices. In this paper, we review the recent research progress in ME heterostructure for device applications, and present a development course of ME heterostructure. Finally, we also summarize the challenges of developing the ME heterostructure and point out its perspectives.
      通信作者: 汪尧进, yjwang@njust.edu.cn
    • 基金项目: 国家自然科学基金(批准号:51602156,51790492)、江苏省自然科学基金青年项目(批准号:BK20160824)和中央高校基本科研业务费专项资金(批准号:30916011104,30916011208)资助的课题.
      Corresponding author: Wang Yao-Jin, yjwang@njust.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51602156, 51790492), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160824), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 30916011104, 30916011208).
    [1]

    Dong S, Liu J M 2010 Physics 39 714 (in Chinese) [董帅, 刘俊明 2010 物理 39 714]

    [2]

    Li X G, Xu X Q, Qian T 2005 J. Sichuan Univ. (Nat. Sci. Ed.) 42 43 (in Chinese) [李晓光, 许雪芹, 钱天 2005 四川大学学报(自然科学版) 42 43]

    [3]

    Dong S, Xiang H J 2014 Physics 43 173 (in Chinese) [董帅, 向红军 2014 物理 43 173]

    [4]

    Yu P, Zhang J X 2013 Prog. Phys. 33 369 (in Chinese) [于浦, 张金星 2013 物理学进展 33 369]

    [5]

    Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101

    [6]

    Jin J Z, Lu S G, Chanthad C, Zhang Q M, Hague M A, Wang Q 2011 Adv. Mater. 23 3853

    [7]

    van Run A M J G, Terrell D R, Scholing J H 1974 J. Mater. Sci. 9 1710

    [8]

    Benveniste Y 1995 Phys. Rev. B 51 16424

    [9]

    Nan C W 1994 Phys. Rev. B 50 6082

    [10]

    Srinivasan G, Rasmussen E T, Gallegos J, Srinivasan R, Bokhan Y I, Laletin V M 2001 Phys. Rev. B 64 214408

    [11]

    Zhou J P, Shi Z, Liu G, He H C, Nan C W 2006 Acta Phys. Sin. 55 3766 (in Chinese) [周剑平, 施展, 刘刚, 何泓材, 南策文 2006 物理学报 55 3766]

    [12]

    Fiebig M 2005 J. Phys. D: Appl. Phys. 38 R123

    [13]

    Priya S, Islam R, Dong S X, Viehland D 2007 J. Electroceram. 19 147

    [14]

    Ryu J, Carazo A V, Uchino K, Kim H E 2001 Jpn. J. Appl. Phys. Part 1 40 4948

    [15]

    Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceram. 8 107

    [16]

    Wang Y J, Gray D, Berry D, Gao J Q, Li M H, Li J F, Viehland D 2011 Adv. Mater. 23 4111

    [17]

    Zhang Y, Gao Y J, Hu C, Tan X Y, Qiu D, Zhang T T, Zhu Y D, Li M Y 2016 Acta Phys. Sin. 65 167501 (in Chinese) [张源, 高雁军, 胡诚, 谭兴毅, 邱达, 张婷婷, 朱永丹, 李美亚 2016 物理学报 65 167501]

    [18]

    Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海, 文玉梅, 李平, 卞雷祥 2008 物理学报 57 7292]

    [19]

    Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053905

    [20]

    Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053904

    [21]

    Li M H, Berry D, Das J, Gray D, Li J F, Viehland D 2011 J. Am. Ceram. Soc. 94 3738

    [22]

    Gao J Q, Das J, Xing Z P, Li J F, Viehland D 2010 J. Appl. Phys. 108 084509

    [23]

    Liu G, Nan C W, Cai N, Lin Y H 2004 J. Appl. Phys. 95 2660

    [24]

    Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 094409

    [25]

    Dong S X, Li J F, Viehland D 2004 IEEE Trans. Ultrason. Ferr. 51 794

    [26]

    Wang Y J, Hasanyan D, Li M H, Gao J Q, Li J F, Viehland D 2013 IEEE Trans. Ultrason. Ferr. 60 1227

    [27]

    Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrason. Ferr. 50 1253

    [28]

    Wang Y J, Hasanyan D, Li J F, Viehland D, Luo H S 2012 Appl. Phys. Lett. 100 202903

    [29]

    Hasanyan D, Gao J, Wang Y, Viswan R, Li M, Shen Y, Li J, Viehland D 2012 J. Appl. Phys. 112 013908

    [30]

    Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 96 3382

    [31]

    Gao J Q, Shen Y, Wang Y J, Finkel P, Li J F, Viehland D 2011 IEEE Trans. Ultrason. Ferr. 58 1545

    [32]

    Petrov V M, Srinivasan G, Bichurin M I, Galkina T A 2009 J. Appl. Phys. 105 063911

    [33]

    Wang Y J, Or S W, Chan H L W, Zhao X Y, Luo H S 2008 J. Appl. Phys. 103 124511

    [34]

    Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 5305

    [35]

    Jia Y M, Luo H S, Zhao X Y, Wang F F 2008 Adv. Mater. 20 4776

    [36]

    Zhai J Y, Dong S X, Xing Z P, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 083507

    [37]

    Wang Y J, Gray D, Berry D, Gao J Q, Li J F, Viehland D, Luo H S 2011 Phys. Status Solidi R 5 232

    [38]

    Jiao J 2013 Ph. D. Dissertation (Shanghai: University of Chinese Academy of Sciences) (in Chinese) [焦杰 2013 博士学位论文 (上海:中国科学院大学)]

    [39]

    Chu Z, Shi H, Shi W, Liu G, Wu J, Yang J, Dong S 2017 Adv. Mater. 29 1606022

    [40]

    Dong S X, Zhai J, Bai F, Li J F, Viehland D 2005 Appl. Phys. Lett. 87 062502

    [41]

    Bichurin M I, Petrov R V, Petrov V M 2013 Appl. Phys. Lett. 103 092902

    [42]

    Liu G X, Zhang C L, Dong S X 2014 J. Appl. Phys. 116 074104

    [43]

    Palneedi H, Maurya D, Kim G Y, Priya S, Kang S J L, Kim K H, Choi S Y, Ryu J 2015 Appl. Phys. Lett. 107 012904

    [44]

    Palneedi H, Maurya D, Geng L D, Song H C, Hwang G T, Peddigari M, Annapureddy V, Song K, Oh Y S, Yang S C, Wang Y U, Priya S, Ryu J 2018 ACS Appl. Mater. Inte. 10 11018

    [45]

    Palneedi H, Maurya D, Kim G Y, Annapureddy V, Noh M S, Kang C Y, Kim J W, Choi J J, Choi S Y, Chung S Y, Kang S L, Priya S, Ryu J 2017 Adv. Mater. 29 1605688

    [46]

    Ramesh R, Spaldin N A 2007 Nat. Mater. 6 21

    [47]

    Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062

    [48]

    Wan H, Xie L Q, Wu X Z, Liu X C 2005 Acta Phys. Sin. 54 3872 (in Chinese) [万红, 谢立强, 吴学忠, 刘希从 2005 物理学报 54 3872]

    [49]

    He H C, Lin Y H, Nan C W 2008 Chin. Sci. Bull. 53 1136 (in Chinese) [何泓材, 林元华, 南策文 2008 科学通报 53 1136]

    [50]

    Zheng R K, Li X G 2013 Prog. Phys. 33 359 (in Chinese) [郑仁奎, 李晓光 2013 物理学进展 33 359]

    [51]

    He H C, Wang J, Zhou B P, Nan C W 2007 Adv. Funct. Mater. 17 1333

    [52]

    He H C, Zhou J P, Wang J, Nan C W 2006 Appl. Phys. Lett. 89 052904

    [53]

    Deng C Y, Zhang Y, Ma J, Lin Y H, Nan C W 2007 J. Appl. Phys. 102 074114

    [54]

    Zhou J P, He H C, Zhang Y, Deng C Y, Shi Z, Nan C W 2007 Appl. Phys. A: Mater. 89 553

    [55]

    Marauska S, Jahns R, Greve H, Quandt E, Knchel R, Wagner B 2012 J. Micromech. Microeng. 22 065024

    [56]

    Marauska S, Jahns R, Kirchhof C, Claus M, Quandt E, Knoechel R, Wagner B 2013 Sensor. Actuat. A: Phys. 189 321

    [57]

    Jahns R, Zabel S, Marauska S, Gojdka B, Wagner B, Knchel R, Adelung R, Faupel F 2014 Appl. Phys. Lett. 105 052414

    [58]

    Greve H, Woltermann E, Jahns R, Marauska S, Wagner B, Knoechel R, Wuttig M, Quandt E 2010 Appl. Phys. Lett. 97 152503

    [59]

    Lage E, Kirchhof C, Hrkac V, Kienle L, Jahns R, Knoechel R, Quandt E, Meyners D 2012 Nat. Mater. 11 523

    [60]

    Wang Y J, Li J F, Viehland D 2014 Mater. Today 17 269

    [61]

    Wang Y J, Gao J Q, Li M H, Shen Y, Hasanyan D, Li J F, Viehland D 2014 Philos. Trans. A: Math. Phys. Eng. Sci. 372 20120455

    [62]

    Palneedi H, Annapureddy V, Priya S, Ryu J 2016 Actuators 5 9

    [63]

    Chu Z, PourhosseiniAsl M, Dong S 2018 J. Phys. D: Appl. Phys. 51 243001

    [64]

    Gao J Q, Wang Y J, Li M H, Shen Y, Li J F, Viehland D 2012 Mater. Lett. 85 84

    [65]

    Wang Y J, Gray D, Berry D, Li M H, Gao J Q, Li J F, Viehland D 2012 J. Alloy. Compd. 513 242

    [66]

    Wang Y J, Gray D, Gao J Q, Berry D, Li M H, Li J F, Viehland D, Luo H S 2012 J. Alloy. Compd. 519 1

    [67]

    Das J, Gao J, Xing Z, Li J F, Viehland D 2009 Appl. Phys. Lett. 95 092501

    [68]

    Wang Y J, Gray D, Berry D, Li J F, Viehland D 2012 IEEE Trans. Ultrason. Ferr. 59 859

    [69]

    Gao J Q, Gray D, Shen Y, Li J F, Viehland D 2011 Appl. Phys. Lett. 99 153502

    [70]

    Wang Y J, Li M H, Hasanyan D, Gao J Q, Li J F, Viehland D 2012 Appl. Phys. Lett. 101 092905

    [71]

    Yang Y D, Gao J Q, Wang Z G, Li M H, Li J F, Das J, Viehland D 2011 Mater. Res. Bull. 46 266

    [72]

    Li M H, Wang Z G, Wang Y J, Li J F, Viehland D 2013 Appl. Phys. Lett. 102 082404

    [73]

    Luo H S, Jiao J, Li X B, Zhao X Y, Xu Q, Yue Q W 2014 Mod. Phys. 26 36 (in Chinese) [罗豪甦, 焦杰, 李晓兵, 赵祥永, 许晴, 岳晴雯 2014 现代物理知识 26 36]

    [74]

    Li M H, Gao J Q, Wang Y J, Gray D, Li J F, Viehland D 2012 J. Appl. Phys. 111 104504

    [75]

    Xing Z P, Zhai J Y, Gao J Q, Li J F, Viehland D 2009 IEEE Electr. Device Lett. 30 445

    [76]

    Zhuang X, Sing M L C, Cordier C, Saez S, Dolabdjian C, Shen L, Li J F, Li M, Viehland D 2011 IEEE Sens. J. 11 2266

    [77]

    Jahns R, Greve H, Woltermann E, Quandt E, Knchel R 2012 Sensor. Actuat. A: Phys. 183 16

    [78]

    Liu Y T, Jiao J, Ma J S, Ren B, Li L Y, Zhao X Y, Luo H S, Shi L 2013 Appl. Phys. Lett. 103 212902

    [79]

    Salzer S, Hft M, Knchel R, Hayes P, Yarar E, Piorra A, Quandt E 2015 Proc. Eng. 120 940

    [80]

    Hayes P, Salzer S, Reermann J, Yarar E, Rbisch V, Piorra A, Meyners D, Hft M, Knchel R, Schmidt G, Quandt E 2016 Appl. Phys. Lett. 108 182902

    [81]

    Zhuang X, Lam Chok Sing M, Dolabdjian C 2013 IEEE Trans. Magn. 49 120

    [82]

    Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 88 082907

    [83]

    Nan T X, Hui Y, Rinaldi M, Sun N X 2013 Sci. Rep. 3 1985

    [84]

    Li M H, Matyushov A, Dong C Z, Chen H H, Lin H, Nan T X, Qian Z Y, Rinaldi M, Lin Y H, Sun N X 2017 Appl. Phys. Lett. 110 143510

    [85]

    Chu Z, Shi H, PourhosseiniAsl M J, Wu J, Shi W, Gao X, Yuan X, Dong S 2017 Sci. Rep. 7 8592

    [86]

    Ryu J, Kang J E, Zhou Y, Choi S Y, Yoon W H, Park D S, Choi J J, Hahn B D, Ahn C W, Kim J W, Kim Y D, Priya S, Lee S Y, Jeong S, Jeong D Y 2015 Energ. Environ. Sci. 8 2402

    [87]

    Annapureddy V, Na S M, Hwang G T, Kang M G, Sriramdas R, Palneedi H, Yoon W H, Hahn B D, Kim J W, Ahn C W, Park D S, Choi J J, Jeong D Y, Flatau A B, Peddigari M, Priya S, Kim K H, Ryu J 2018 Energ. Environ. Sci. 11 818

    [88]

    Yao Z, Wang Y E, Keller S, Carman G P 2015 IEEE Trans. Antenn. Propag. 63 3335

    [89]

    Domann J P, Carman G P 2017 J. Appl. Phys. 121 044905

    [90]

    Nan T, Lin H, Gao Y, Matyushov A, Yu G, Chen H, Sun N, Wei S, Wang Z, Li M, Wang X, Belkessam A, Guo R, Chen B, Zhou J, Qian Z, Hui Y, Rinaldi M, McConney M E, Howe B M, Hu Z, Jones J G, Brown G J, Sun N X 2017 Nat. Commun. 8 296

    [91]

    Shen J X, Shang D S, Chai Y S, Wang Y, Cong J Z, Shen S P, Yan L Q, Wang W H, Sun Y 2016 Phys. Rev. Appl. 6 064028

    [92]

    Nan C W 2015 Sci. Sin. Technol. 45 339 (in Chinese) [南策文 2015 中国科学: 技术科学 45 339]

    [93]

    Palneedi H, Yeo H G, Hwang G T, Annapureddy V, Kim J W, Choi J J, Trolier McKinstry S, Ryu J 2017 APL Mater. 5 096111

    [94]

    Zong Y, Zheng T, Martins P, Lanceros Mendez S, Yue Z, Higgins M J 2017 Nat. Commun. 8 38

  • [1]

    Dong S, Liu J M 2010 Physics 39 714 (in Chinese) [董帅, 刘俊明 2010 物理 39 714]

    [2]

    Li X G, Xu X Q, Qian T 2005 J. Sichuan Univ. (Nat. Sci. Ed.) 42 43 (in Chinese) [李晓光, 许雪芹, 钱天 2005 四川大学学报(自然科学版) 42 43]

    [3]

    Dong S, Xiang H J 2014 Physics 43 173 (in Chinese) [董帅, 向红军 2014 物理 43 173]

    [4]

    Yu P, Zhang J X 2013 Prog. Phys. 33 369 (in Chinese) [于浦, 张金星 2013 物理学进展 33 369]

    [5]

    Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101

    [6]

    Jin J Z, Lu S G, Chanthad C, Zhang Q M, Hague M A, Wang Q 2011 Adv. Mater. 23 3853

    [7]

    van Run A M J G, Terrell D R, Scholing J H 1974 J. Mater. Sci. 9 1710

    [8]

    Benveniste Y 1995 Phys. Rev. B 51 16424

    [9]

    Nan C W 1994 Phys. Rev. B 50 6082

    [10]

    Srinivasan G, Rasmussen E T, Gallegos J, Srinivasan R, Bokhan Y I, Laletin V M 2001 Phys. Rev. B 64 214408

    [11]

    Zhou J P, Shi Z, Liu G, He H C, Nan C W 2006 Acta Phys. Sin. 55 3766 (in Chinese) [周剑平, 施展, 刘刚, 何泓材, 南策文 2006 物理学报 55 3766]

    [12]

    Fiebig M 2005 J. Phys. D: Appl. Phys. 38 R123

    [13]

    Priya S, Islam R, Dong S X, Viehland D 2007 J. Electroceram. 19 147

    [14]

    Ryu J, Carazo A V, Uchino K, Kim H E 2001 Jpn. J. Appl. Phys. Part 1 40 4948

    [15]

    Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceram. 8 107

    [16]

    Wang Y J, Gray D, Berry D, Gao J Q, Li M H, Li J F, Viehland D 2011 Adv. Mater. 23 4111

    [17]

    Zhang Y, Gao Y J, Hu C, Tan X Y, Qiu D, Zhang T T, Zhu Y D, Li M Y 2016 Acta Phys. Sin. 65 167501 (in Chinese) [张源, 高雁军, 胡诚, 谭兴毅, 邱达, 张婷婷, 朱永丹, 李美亚 2016 物理学报 65 167501]

    [18]

    Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海, 文玉梅, 李平, 卞雷祥 2008 物理学报 57 7292]

    [19]

    Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053905

    [20]

    Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053904

    [21]

    Li M H, Berry D, Das J, Gray D, Li J F, Viehland D 2011 J. Am. Ceram. Soc. 94 3738

    [22]

    Gao J Q, Das J, Xing Z P, Li J F, Viehland D 2010 J. Appl. Phys. 108 084509

    [23]

    Liu G, Nan C W, Cai N, Lin Y H 2004 J. Appl. Phys. 95 2660

    [24]

    Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 094409

    [25]

    Dong S X, Li J F, Viehland D 2004 IEEE Trans. Ultrason. Ferr. 51 794

    [26]

    Wang Y J, Hasanyan D, Li M H, Gao J Q, Li J F, Viehland D 2013 IEEE Trans. Ultrason. Ferr. 60 1227

    [27]

    Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrason. Ferr. 50 1253

    [28]

    Wang Y J, Hasanyan D, Li J F, Viehland D, Luo H S 2012 Appl. Phys. Lett. 100 202903

    [29]

    Hasanyan D, Gao J, Wang Y, Viswan R, Li M, Shen Y, Li J, Viehland D 2012 J. Appl. Phys. 112 013908

    [30]

    Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 96 3382

    [31]

    Gao J Q, Shen Y, Wang Y J, Finkel P, Li J F, Viehland D 2011 IEEE Trans. Ultrason. Ferr. 58 1545

    [32]

    Petrov V M, Srinivasan G, Bichurin M I, Galkina T A 2009 J. Appl. Phys. 105 063911

    [33]

    Wang Y J, Or S W, Chan H L W, Zhao X Y, Luo H S 2008 J. Appl. Phys. 103 124511

    [34]

    Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 5305

    [35]

    Jia Y M, Luo H S, Zhao X Y, Wang F F 2008 Adv. Mater. 20 4776

    [36]

    Zhai J Y, Dong S X, Xing Z P, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 083507

    [37]

    Wang Y J, Gray D, Berry D, Gao J Q, Li J F, Viehland D, Luo H S 2011 Phys. Status Solidi R 5 232

    [38]

    Jiao J 2013 Ph. D. Dissertation (Shanghai: University of Chinese Academy of Sciences) (in Chinese) [焦杰 2013 博士学位论文 (上海:中国科学院大学)]

    [39]

    Chu Z, Shi H, Shi W, Liu G, Wu J, Yang J, Dong S 2017 Adv. Mater. 29 1606022

    [40]

    Dong S X, Zhai J, Bai F, Li J F, Viehland D 2005 Appl. Phys. Lett. 87 062502

    [41]

    Bichurin M I, Petrov R V, Petrov V M 2013 Appl. Phys. Lett. 103 092902

    [42]

    Liu G X, Zhang C L, Dong S X 2014 J. Appl. Phys. 116 074104

    [43]

    Palneedi H, Maurya D, Kim G Y, Priya S, Kang S J L, Kim K H, Choi S Y, Ryu J 2015 Appl. Phys. Lett. 107 012904

    [44]

    Palneedi H, Maurya D, Geng L D, Song H C, Hwang G T, Peddigari M, Annapureddy V, Song K, Oh Y S, Yang S C, Wang Y U, Priya S, Ryu J 2018 ACS Appl. Mater. Inte. 10 11018

    [45]

    Palneedi H, Maurya D, Kim G Y, Annapureddy V, Noh M S, Kang C Y, Kim J W, Choi J J, Choi S Y, Chung S Y, Kang S L, Priya S, Ryu J 2017 Adv. Mater. 29 1605688

    [46]

    Ramesh R, Spaldin N A 2007 Nat. Mater. 6 21

    [47]

    Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062

    [48]

    Wan H, Xie L Q, Wu X Z, Liu X C 2005 Acta Phys. Sin. 54 3872 (in Chinese) [万红, 谢立强, 吴学忠, 刘希从 2005 物理学报 54 3872]

    [49]

    He H C, Lin Y H, Nan C W 2008 Chin. Sci. Bull. 53 1136 (in Chinese) [何泓材, 林元华, 南策文 2008 科学通报 53 1136]

    [50]

    Zheng R K, Li X G 2013 Prog. Phys. 33 359 (in Chinese) [郑仁奎, 李晓光 2013 物理学进展 33 359]

    [51]

    He H C, Wang J, Zhou B P, Nan C W 2007 Adv. Funct. Mater. 17 1333

    [52]

    He H C, Zhou J P, Wang J, Nan C W 2006 Appl. Phys. Lett. 89 052904

    [53]

    Deng C Y, Zhang Y, Ma J, Lin Y H, Nan C W 2007 J. Appl. Phys. 102 074114

    [54]

    Zhou J P, He H C, Zhang Y, Deng C Y, Shi Z, Nan C W 2007 Appl. Phys. A: Mater. 89 553

    [55]

    Marauska S, Jahns R, Greve H, Quandt E, Knchel R, Wagner B 2012 J. Micromech. Microeng. 22 065024

    [56]

    Marauska S, Jahns R, Kirchhof C, Claus M, Quandt E, Knoechel R, Wagner B 2013 Sensor. Actuat. A: Phys. 189 321

    [57]

    Jahns R, Zabel S, Marauska S, Gojdka B, Wagner B, Knchel R, Adelung R, Faupel F 2014 Appl. Phys. Lett. 105 052414

    [58]

    Greve H, Woltermann E, Jahns R, Marauska S, Wagner B, Knoechel R, Wuttig M, Quandt E 2010 Appl. Phys. Lett. 97 152503

    [59]

    Lage E, Kirchhof C, Hrkac V, Kienle L, Jahns R, Knoechel R, Quandt E, Meyners D 2012 Nat. Mater. 11 523

    [60]

    Wang Y J, Li J F, Viehland D 2014 Mater. Today 17 269

    [61]

    Wang Y J, Gao J Q, Li M H, Shen Y, Hasanyan D, Li J F, Viehland D 2014 Philos. Trans. A: Math. Phys. Eng. Sci. 372 20120455

    [62]

    Palneedi H, Annapureddy V, Priya S, Ryu J 2016 Actuators 5 9

    [63]

    Chu Z, PourhosseiniAsl M, Dong S 2018 J. Phys. D: Appl. Phys. 51 243001

    [64]

    Gao J Q, Wang Y J, Li M H, Shen Y, Li J F, Viehland D 2012 Mater. Lett. 85 84

    [65]

    Wang Y J, Gray D, Berry D, Li M H, Gao J Q, Li J F, Viehland D 2012 J. Alloy. Compd. 513 242

    [66]

    Wang Y J, Gray D, Gao J Q, Berry D, Li M H, Li J F, Viehland D, Luo H S 2012 J. Alloy. Compd. 519 1

    [67]

    Das J, Gao J, Xing Z, Li J F, Viehland D 2009 Appl. Phys. Lett. 95 092501

    [68]

    Wang Y J, Gray D, Berry D, Li J F, Viehland D 2012 IEEE Trans. Ultrason. Ferr. 59 859

    [69]

    Gao J Q, Gray D, Shen Y, Li J F, Viehland D 2011 Appl. Phys. Lett. 99 153502

    [70]

    Wang Y J, Li M H, Hasanyan D, Gao J Q, Li J F, Viehland D 2012 Appl. Phys. Lett. 101 092905

    [71]

    Yang Y D, Gao J Q, Wang Z G, Li M H, Li J F, Das J, Viehland D 2011 Mater. Res. Bull. 46 266

    [72]

    Li M H, Wang Z G, Wang Y J, Li J F, Viehland D 2013 Appl. Phys. Lett. 102 082404

    [73]

    Luo H S, Jiao J, Li X B, Zhao X Y, Xu Q, Yue Q W 2014 Mod. Phys. 26 36 (in Chinese) [罗豪甦, 焦杰, 李晓兵, 赵祥永, 许晴, 岳晴雯 2014 现代物理知识 26 36]

    [74]

    Li M H, Gao J Q, Wang Y J, Gray D, Li J F, Viehland D 2012 J. Appl. Phys. 111 104504

    [75]

    Xing Z P, Zhai J Y, Gao J Q, Li J F, Viehland D 2009 IEEE Electr. Device Lett. 30 445

    [76]

    Zhuang X, Sing M L C, Cordier C, Saez S, Dolabdjian C, Shen L, Li J F, Li M, Viehland D 2011 IEEE Sens. J. 11 2266

    [77]

    Jahns R, Greve H, Woltermann E, Quandt E, Knchel R 2012 Sensor. Actuat. A: Phys. 183 16

    [78]

    Liu Y T, Jiao J, Ma J S, Ren B, Li L Y, Zhao X Y, Luo H S, Shi L 2013 Appl. Phys. Lett. 103 212902

    [79]

    Salzer S, Hft M, Knchel R, Hayes P, Yarar E, Piorra A, Quandt E 2015 Proc. Eng. 120 940

    [80]

    Hayes P, Salzer S, Reermann J, Yarar E, Rbisch V, Piorra A, Meyners D, Hft M, Knchel R, Schmidt G, Quandt E 2016 Appl. Phys. Lett. 108 182902

    [81]

    Zhuang X, Lam Chok Sing M, Dolabdjian C 2013 IEEE Trans. Magn. 49 120

    [82]

    Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 88 082907

    [83]

    Nan T X, Hui Y, Rinaldi M, Sun N X 2013 Sci. Rep. 3 1985

    [84]

    Li M H, Matyushov A, Dong C Z, Chen H H, Lin H, Nan T X, Qian Z Y, Rinaldi M, Lin Y H, Sun N X 2017 Appl. Phys. Lett. 110 143510

    [85]

    Chu Z, Shi H, PourhosseiniAsl M J, Wu J, Shi W, Gao X, Yuan X, Dong S 2017 Sci. Rep. 7 8592

    [86]

    Ryu J, Kang J E, Zhou Y, Choi S Y, Yoon W H, Park D S, Choi J J, Hahn B D, Ahn C W, Kim J W, Kim Y D, Priya S, Lee S Y, Jeong S, Jeong D Y 2015 Energ. Environ. Sci. 8 2402

    [87]

    Annapureddy V, Na S M, Hwang G T, Kang M G, Sriramdas R, Palneedi H, Yoon W H, Hahn B D, Kim J W, Ahn C W, Park D S, Choi J J, Jeong D Y, Flatau A B, Peddigari M, Priya S, Kim K H, Ryu J 2018 Energ. Environ. Sci. 11 818

    [88]

    Yao Z, Wang Y E, Keller S, Carman G P 2015 IEEE Trans. Antenn. Propag. 63 3335

    [89]

    Domann J P, Carman G P 2017 J. Appl. Phys. 121 044905

    [90]

    Nan T, Lin H, Gao Y, Matyushov A, Yu G, Chen H, Sun N, Wei S, Wang Z, Li M, Wang X, Belkessam A, Guo R, Chen B, Zhou J, Qian Z, Hui Y, Rinaldi M, McConney M E, Howe B M, Hu Z, Jones J G, Brown G J, Sun N X 2017 Nat. Commun. 8 296

    [91]

    Shen J X, Shang D S, Chai Y S, Wang Y, Cong J Z, Shen S P, Yan L Q, Wang W H, Sun Y 2016 Phys. Rev. Appl. 6 064028

    [92]

    Nan C W 2015 Sci. Sin. Technol. 45 339 (in Chinese) [南策文 2015 中国科学: 技术科学 45 339]

    [93]

    Palneedi H, Yeo H G, Hwang G T, Annapureddy V, Kim J W, Choi J J, Trolier McKinstry S, Ryu J 2017 APL Mater. 5 096111

    [94]

    Zong Y, Zheng T, Martins P, Lanceros Mendez S, Yue Z, Higgins M J 2017 Nat. Commun. 8 38

  • [1] 谢冰鸿, 徐国凯, 肖绍球, 喻忠军, 朱大立. 非线性磁电换能器模型的谐振磁电效应分析及其输出功率优化. 物理学报, 2023, 72(11): 117501. doi: 10.7498/aps.72.20222277
    [2] 聂长文, 吴瀚舟, 王书豪, 蔡园园, 宋树, SokolovOleg, BichurinM. I., 汪尧进. 磁电电压可调电感器的理论设计与可调性优化. 物理学报, 2021, 70(24): 247501. doi: 10.7498/aps.70.20210899
    [3] 周勇, 李纯健, 潘昱融. 磁致伸缩/压电层叠复合材料磁电效应分析. 物理学报, 2018, 67(7): 077702. doi: 10.7498/aps.67.20172307
    [4] 楼国锋, 于歆杰, 卢诗华. 引入界面耦合系数的长片型磁电层状复合材料的等效电路模型. 物理学报, 2018, 67(2): 027501. doi: 10.7498/aps.67.20172080
    [5] 俞斌, 胡忠强, 程宇心, 彭斌, 周子尧, 刘明. 多铁性磁电器件研究进展. 物理学报, 2018, 67(15): 157507. doi: 10.7498/aps.67.20180857
    [6] 施展, 陈来柱, 佟永帅, 郑智滨, 杨水源, 王翠萍, 刘兴军. Terfenol-D/PZT磁电复合材料的磁电相位移动研究. 物理学报, 2013, 62(1): 017501. doi: 10.7498/aps.62.017501
    [7] 李平, 黄娴, 文玉梅. 偏置电压对磁致伸缩/压电层合换能结构磁电性能影响. 物理学报, 2012, 61(13): 137504. doi: 10.7498/aps.61.137504
    [8] 李廷先, 张铭, 王光明, 郭宏瑞, 李扩社, 严辉. La2/3Sr1/3MnO3/BaTiO3复合薄膜的制备及其电致磁电效应研究. 物理学报, 2011, 60(8): 087501. doi: 10.7498/aps.60.087501
    [9] 毕科, 艾迁伟, 杨路, 吴玮, 王寅岗. Ni/Pb(Zr,Ti)O3/TbFe2层状复合材料的谐振磁电特性研究. 物理学报, 2011, 60(5): 057503. doi: 10.7498/aps.60.057503
    [10] 陈蕾, 李平, 文玉梅, 王东. 高磁导率材料FeCuNbSiB对超磁致伸缩/压电层合材料磁电性能的影响. 物理学报, 2011, 60(6): 067501. doi: 10.7498/aps.60.067501
    [11] 鲍丙豪, 骆英. 有限输入阻抗下压电/磁伸层叠材料磁电效应理论及实验. 物理学报, 2011, 60(1): 017508. doi: 10.7498/aps.60.017508
    [12] 鲍丙豪, 骆英. 纵向极化与磁化叠层复合材料磁电效应理论及计算. 物理学报, 2011, 60(6): 067504. doi: 10.7498/aps.60.067504
    [13] 马静, 施展, 林元华, 南策文. 准2-2型磁电多层复合材料的磁电性能. 物理学报, 2009, 58(8): 5852-5856. doi: 10.7498/aps.58.5852
    [14] 曹鸿霞, 张 宁. 磁电双层膜层间耦合的弹性力学研究. 物理学报, 2008, 57(5): 3237-3243. doi: 10.7498/aps.57.3237
    [15] 曹鸿霞, 张 宁. 过渡族元素掺杂BaTiO3-Tb1-xDyxFe2-y层状复合材料中的磁电效应. 物理学报, 2008, 57(10): 6582-6586. doi: 10.7498/aps.57.6582
    [16] 阳昌海, 文玉梅, 李 平, 卞雷祥. 偏置磁场对磁致伸缩/弹性/压电层合材料磁电效应的影响. 物理学报, 2008, 57(11): 7292-7297. doi: 10.7498/aps.57.7292
    [17] 杨 帆, 文玉梅, 李 平, 郑 敏, 卞雷祥. 考虑损耗的磁致/压电层合材料谐振磁电响应分析. 物理学报, 2007, 56(6): 3539-3545. doi: 10.7498/aps.56.3539
    [18] 周剑平, 施 展, 刘 刚, 何泓材, 南策文. 铁电/铁磁1-3型结构复合材料磁电性能分析. 物理学报, 2006, 55(7): 3766-3771. doi: 10.7498/aps.55.3766
    [19] 万 红, 谢立强, 吴学忠, 刘希从. TbDyFe/PZT层状复合材料的磁电效应研究. 物理学报, 2005, 54(8): 3872-3877. doi: 10.7498/aps.54.3872
    [20] 万 红, 沈仁发, 吴学忠. 对称磁电层合板磁电转换效应理论研究. 物理学报, 2005, 54(3): 1426-1430. doi: 10.7498/aps.54.1426
计量
  • 文章访问数:  7970
  • PDF下载量:  585
  • 被引次数: 0
出版历程
  • 收稿日期:  2018-04-30
  • 修回日期:  2018-06-01
  • 刊出日期:  2018-08-05

/

返回文章
返回