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目前,AlGaInP大功率发光二极管(LED)存在的主要问题是大电流工作时发热严重,主要是由于电流扩展不均匀、出光面电极对光子的阻挡和吸收以及器件材料与空气折射率之间的差距引起的全反射现象,这些因素造成大功率LED出光受到限制、发光效率低、亮度不高.提出了一种复合电流扩展层和复合分布式布拉格反射层(DBR)的新型结构LED,使得注入电流在有源区充分地扩散,同时提高了常规单DBR对光子的反射率.结果显示,这种新型结构LED比常规结构LED的性能得到了很大的提升,350 mA注入电流下两者的输出光功率分别为4
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关键词:
- 复合电流扩展层 /
- 复合分布式布拉格反射层 /
- 出光效率 /
- 结温
One of the main problems of high power AlGaInP light-emitting diode (LED) is the heat generated seriously at large working current, which is caused by the weak current spreading, the photon blocking and absorbing of p-type or n-type electrode, and the critical reflection at the interface between the device and air. The heat inside can lead to the restriction on light output, and gives rise to low light efficiency and the low luminous intensity. In this paper, we introduce a new LED structure which is composed of compound current spreading layers and compound distribute Bragg reflector (DBR) layers. For the new structure LED, the injected current spreads adequately and the reflectivity is improved by the compound DBR layers. The testing results show that the performance of new structure LED is much better than that of the conventional LED, and that at a working current of 350 mA, the output powers of the two kinds of LEDs (which are unpackaged) are 17 and 49.48 mW respectively. At the same time, the heat testing results show the relationship between LED light efficiency and juction temperature, and the consistence between the juction temperature ratio and the ratio of light efficiency for the two kinds LEDs, which implies that LED light efficiency can be improved by reducing heat generated inside and reducing the juction temperature.-
Keywords:
- compound current spreading layer /
- compound distributed Bragg reflector layer /
- light efficiency /
- juction temperature
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[23] [24] Zhu Y X 2007 Ph. D. Dissertation (Beijing: Beijing University of Technology) p89(in Chinese) [朱彦旭 2007 博士学位论文(北京:北京工业大学) 第89页]
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[28] Lee C C 2004 IEEE Photon. Technol. Lett. 16 1706
[29] -
[1] Yen C H, Liu Y J, Huang N Y, Yu K H, Chen T P, Chen L Y, Tsai T H, Lee C Y, Liu W C 2008 IEEE Photon. Techn. Lett. 20 1923
[2] [3] Liu L, Fan G H, Liao C J, Gao M D, Chen G C, Chen L H 2003 Acta Phys. Sin. 52 1264 (in Chinese)[刘 鲁、范广涵、廖常俊、曹明德、陈贵楚、陈练辉 2003 物理学报 52 1264]
[4] Altieri P, Jaeger A, Windisch R 2005 J. Appl. Phys. 98 086101
[5] [6] Sugawara H, Itaya K, Hatako S, Geni C 1994 Jpn. J. Appl. Phys. 33 6195
[7] [8] [9] Da X L 2007 Ph. D. Dissertation (Beijing: Beijing University of Technology) p107(in Chinese)[达小丽 2007 博士学位论文 (北京:北京工业大学) 第107页]
[10] Chen Y X, Shen G D, Li J J, Han J R, Xu C 2009 Chin. J. Semicond. 30 084009 (in Chinese) [陈依新、沈光地、李建军、 韩金茹、徐 晨 2009 半导体学报 30 084009]
[11] [12] [13] Windisch R, Rooman C, Meinlschmidt C 2001 Appl. Phys. Lett. 79 2315
[14] Chen Y X, Zheng W H, Chen W, Chen L H, Tang Y D, Shen G D 2010 Acta Phys. Sin. 59 8083 (in Chinese) [陈依新、郑婉华、陈 薇、陈良惠、汤益丹、沈光地 2010 物理学报59 8083]
[15] [16] Zhang J M, Zou D S, Liu S N, Xu C, Shen G D 2007 Acta Phys. Sin. 56 2905 (in Chinese) [张剑铭、邹德恕、刘思南、徐 晨、沈光地 2007 物理学报56 2905]
[17] [18] Han J,Li J J,Deng J,Xing Y H,Yu X D,Lin W Z,Liu Y,Shen G D 2008 J. Optoelectron. Laser 19 456 (in Chinese) [韩 军、李建军、邓 军、邢燕辉、于晓东、林委之、刘 莹、沈光地 2008 光电子
[19] [20] Yu X D, Han J, Li J J, Deng J, Lin W Z, Da X L, Chen Y X, Shen G D 2007 Chin. J. Semicond. 28 100 (in Chinese) [于晓东、韩 军、李建军、邓 军、林委之、达小丽、陈依新、沈光地 2007 半导体学报28 100]
[21] [22] Zhang K, Zhu F C, Huan H A, Weea T S 2000 Thin Solid Films 376 255
[23] [24] Zhu Y X 2007 Ph. D. Dissertation (Beijing: Beijing University of Technology) p89(in Chinese) [朱彦旭 2007 博士学位论文(北京:北京工业大学) 第89页]
[25] [26] [27] Robert F P 2004 Semiconductor Device Fundamentals (Beijing: Publishing House of Electronics Industry) p262 (in Chinese)[罗伯特 F P2004 半导体器件基础(中译本)(北京:电子工业出版社) 第262页]
[28] Lee C C 2004 IEEE Photon. Technol. Lett. 16 1706
[29]
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