以表面等离子体为媒介的ZnO薄膜发光增强特性研究

邱东江; 范文志; 翁圣; 吴惠桢; 王俊

doi:10.7498/aps.60.087301

摘要

采用两步法制备Si基Ag/ZnO双层结构薄膜,研究了Ag覆盖层的厚度和生长温度T对ZnO近带边发光强度的影响.对于厚度为100 nm的ZnO薄膜,发现Ag覆盖层的最佳厚度仅为8 nm,此时双层薄膜相对于单层ZnO薄膜的发光增强因子达到最大值8.1;同时还发现,在最佳Ag层厚度下,生长温度T300 ℃时生长Ag所获Ag/ZnO双层薄膜的ZnO发光强度比生长温度T200 ℃时生长的双层薄膜样品大一倍以上, 18.结合对双层薄膜表

关键词:

表面等离子体共振 /
复合薄膜

Abstract

Ag/ZnO bilayer thin films are fabricated on Si substrates via two-step approach of ZnO sputtering + Ag evaporation. The enhancement of the near band edge (NBE) emission of the ZnO film is realized through coupling between the surface plasmon resonating energy at Ag/ZnO interface and the photonic energy of ZnO NBE emission. The dependence of the emission enhancement ratio of ZnO on the thickness and the growth temperature T of Ag cap-layers are investigated. By evaporating Ag(8 nm) cap-layer onto ZnO(100 nm) film at high substrate temperatures (T300 ℃), the value reaches about 18,i.e., 18, which is more than twice that of Ag(8 nm)/ZnO(100 nm) bilayer films grown at low temperatures (T200 ℃). It is found that the realization of the larger can be ascribed to the bigger surface roughness of Ag/ZnO bilayer samples prepared under higher growth temperatures.

Keywords:

surface plasmon resonance /
composite thin film

作者及机构信息

1.
浙江大学物理系,杭州 310027

基金项目: 国家自然科学基金(批准号:50472058)和浙江省自然科学基金(批准号:Y4080171)资助的课题.

Authors and contacts

1.
Department of Physics, Zhejiang University, Hangzhou 310027, China

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施引文献

[1]	Ritchie R H 1957 Phys. Rev. 106 874
[2]	Lal S, Link S, Halas N J 2007 Nat. Photon. 1 641
[3]
[4]
[5]	Hao P, Wu Y H, Zhang P 2010 Acta Phys. Sin. 59 6532 (in Chinese) [郝鹏、吴一辉、张平 2010 物理学报 59 6532]
[6]
[7]	Zhang H X, Gu Y, Gong Q H 2008 Chin. Phys. B 17 2567
[8]
[9]	Xue W R, Guo Y N, Zhang W M 2009 Chin. Phys. B 18 2529
[10]
[11]	Stiles P L, Dieringer J A, Shah N C, Duyne R P V 2008 Annu. Rev. Anal. Chem. 1 601
[12]
[13]	Huang Q, Wang J, Cao L R, Sun J, Zhang X D, Geng W D, Xiong S Z, Zhao Y 2009 Acta Phys. Sin. 58 1980 (in Chinese) [黄茜、王京、曹丽冉、孙建、张晓丹、耿卫东、熊绍珍、赵颖 2009 物理学报 58 1980]
[14]
[15]	Huang Q, Zhang X D, Zhang H, Xiong S Z, Geng W D, Geng X H, Zhao Y 2010 Chin. Phys. B 19 047304
[16]	Lezec H J, Thio T 2004 Opt. Express 12 3629
[17]
[18]
[19]	Hua L, Song G F, Guo B S, Wang W M, Zhang Y 2008 Acta Phys. Sin. 57 7210 (in Chinese) [花磊、宋国峰、郭宝山、汪卫敏、张宇 2008 物理学报 57 7210]
[20]	Wang L C, Deng L, Cui N, Niu Y P, Gong S Q 2010 Chin. Phys. B 19 017303
[21]
[22]
[23]	Gong Z Q, Liu J Q 2010 Chin. Phys. B 19 067303
[24]	Okamoto K, Niki I 2004 Nat. Mater. 3 601
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[26]
[27]	You J P, Zhang X W, Fan Y M, Yin Z G, Cai P F, Chen N F 2008 J. Phys. D 41 205101
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[29]	Cheng P, Li D, Yuan Z, Chen P, Yang D 2008 Appl. Phys. Lett. 92 041119
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[31]	Liu K W, Tang Y D, Cong C X, Sum T C, Huan A C H, Shen Z X, Wang L, Jiang F Y, Sun X W, Sun H D 2009 Appl. Phys. Lett. 94 151102
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[33]	Lai C W, Ong H C 2005 Appl. Phys. Lett. 86 251105
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[36]
[37]	Gifford D K, Hall D G 2002 Appl. Phys. Lett. 81 4315
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[41]
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[43]	Ozgur U, Alivov Y I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S J, Morkoc H 2005 J. Appl. Phys. 98 041301
[44]
[45]	Ebbesen T W, Lezec H J, Ghaemi H F, Thio T, Wolff P A 1998 Nature 391 667

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