载流子导引的折射率变化偏振相关性研究

缪庆元; 崔俊; 胡蕾蕾; 何健; 何平安; 黄德修

doi:10.7498/aps.61.207803

摘要

分析了载流子浓度、张应变量大小、量子阱阱宽和量子阱垒区材料组分对量子阱结构TE模和TM模折射率变化的影响.综合调配以上参数得到1530-1570 nm波长范围内同时具有大的折射率变化量(10-2量级)和折射率变化低偏振相关(10-4量级)的量子阱结构. 研究表明, 不同的调配参数组合可以得到同一波长范围内基本一致的折射率变化谱.

关键词:

The influences of carrier density, tensile strain, well width and barrier material component on the refractive index changes of TE mode and TM mode in quantum well are analyzed. Then the quantum wells having characteristics of both large refractive index change (on the order of 10-2) and low polarization dependence (on the order of 10-4) in a wavelength range from 1530 nm to 1570 nm are designed by comprehensively integrating the parameters above. The result shows that almost the same spectra of refractive index change can be acquired by integrating different groups of parameters.

Keywords:

作者及机构信息

1.
武汉大学电子信息学院, 武汉 430072;

2.
武汉光迅科技股份有限公司, 武汉 430205;

3.
华中科技大学光电子科学与工程学院, 武汉 430074

基金项目: 国家自然科学基金(批准号: 60877039)和湖北省自然科学基金(批准号: 2008CDB328)资助的课题.

Authors and contacts

1.
School of Electronic Information, Wuhan University, Wuhan 430072, China;

2.
Accelink Technologies Co., Ltd, Wuhan 430205, China;

3.
College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60877039) and the Natural Science Foundation of Hubei Province, China (Grant No. 2008CDB328).

参考文献

[1]	Huang B, Liu H X, Wang X, Liang Y X, He Z, Yu S, Chi N 2009 OFC/NFOEC San Diego, USA, March 22-26, 2009 p1
[2]	Geldenhuys R, Merwe J S, Thakulsukanant K, Wang Z, Chi N, Yu S 2011 Opt. Switch. Netw. 8 86
[3]	Sadagopan T, Choi S J, Choi S J, Djordjev K, Dapkus P D 2005 IEEE Photon. Technol. Lett. 17 414
[4]	Majumder S P, Sarker B C, Yoshino T 2003 Opt. Laser Technol. 35 261
[5]	Kang J M, Lee S H, Kim J Y, Kwon H C, Kim T Y, Han S K 2009 Opt. Quant. Electron. 41 349
[6]	Bennett B R, Soref R A, Del Alamo J A 1990 IEEE J. Quantum Electron. 26 113
[7]	Connelly M J 2008 Appl. Phys. Lett. 93 181111
[8]	Wenzel H, Erbert G, Enders P M 1999 IEEE J. Sel. Top. Quantum Electron. 5 637
[9]	Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 物理学报 53 218]
[10]	Ahn D, Yoon S J, Chuang S L, Chang C S 1995 J. Appl. Phys. 78 2489
[11]	Hua L L, Song Y R, Zhang P, Zhang X, Guo K 2010 Acta Opt. Sin. 30 1703 (in Chinese) [华玲玲, 宋晏蓉, 张鹏, 张晓, 郭凯 2010 光学学报 30 1703]
[12]	Li X 2009 Optoelectronic Devices (New York: Cambridge University Press) p203
[13]	Chuang S L 2008 Physics of Photonic Devices (2nd Ed.) (Hoboken: John Wiley and Sons) p803

施引文献

[1]	Huang B, Liu H X, Wang X, Liang Y X, He Z, Yu S, Chi N 2009 OFC/NFOEC San Diego, USA, March 22-26, 2009 p1
[2]	Geldenhuys R, Merwe J S, Thakulsukanant K, Wang Z, Chi N, Yu S 2011 Opt. Switch. Netw. 8 86
[3]	Sadagopan T, Choi S J, Choi S J, Djordjev K, Dapkus P D 2005 IEEE Photon. Technol. Lett. 17 414
[4]	Majumder S P, Sarker B C, Yoshino T 2003 Opt. Laser Technol. 35 261
[5]	Kang J M, Lee S H, Kim J Y, Kwon H C, Kim T Y, Han S K 2009 Opt. Quant. Electron. 41 349
[6]	Bennett B R, Soref R A, Del Alamo J A 1990 IEEE J. Quantum Electron. 26 113
[7]	Connelly M J 2008 Appl. Phys. Lett. 93 181111
[8]	Wenzel H, Erbert G, Enders P M 1999 IEEE J. Sel. Top. Quantum Electron. 5 637
[9]	Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 物理学报 53 218]
[10]	Ahn D, Yoon S J, Chuang S L, Chang C S 1995 J. Appl. Phys. 78 2489
[11]	Hua L L, Song Y R, Zhang P, Zhang X, Guo K 2010 Acta Opt. Sin. 30 1703 (in Chinese) [华玲玲, 宋晏蓉, 张鹏, 张晓, 郭凯 2010 光学学报 30 1703]
[12]	Li X 2009 Optoelectronic Devices (New York: Cambridge University Press) p203
[13]	Chuang S L 2008 Physics of Photonic Devices (2nd Ed.) (Hoboken: John Wiley and Sons) p803

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