Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

A DISLOCATION SOURCE IN THE FLOAT-ZONE GROWN SILICON SINGLE CRYSTALS

LIU ZHEN-MAO WANG GUI-HUA

Citation:

A DISLOCATION SOURCE IN THE FLOAT-ZONE GROWN SILICON SINGLE CRYSTALS

LIU ZHEN-MAO, WANG GUI-HUA
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • The impurity-striations and the dislocation loop series produced from the volume indentation by these impurity-striations in the float-zone grown silicon single crystals have been studied by means of chemical etching method. The experimental results have shown that the impurity-striations are oriented in the direction (110) of planes {111} in silicon, the length of the impurity-strialions is about 5-230μm, the dimensions on cross-section are about 2-3 pun. The geometrical structure of the dislocation loop series produced by volume indentation of the impurity-striation has been studied. The form and size of a single dislocation loop depend on the form and size of the impurity-striation. The dislocation networks resulting from the cross-superposition of the dislocation loop series and reactions between these dislocation loops have been observed and analyzed.
  • [1]
Metrics
  • Abstract views:  5808
  • PDF Downloads:  459
  • Cited By: 0
Publishing process
  • Received Date:  25 July 1978
  • Published Online:  29 July 2005

/

返回文章
返回