Hall effects of amorphous InSb and its metastable intermediate phases which appear in the process of thee crystallization phase transition have been studied. Experimental results show that the conduction of the electron is dominative in the metal-type amorphous InSb and the conduction of the hole is dominative in the semiconductor-type amorphous InSb. The first jump of the conductance is a process of the structure relaxation from the liquid-like amorphous state to the lattice-like one; the third jump of the conductance was caused by In-Sb solid solution with the rich In or rich Sb which was separated out and segregated on the grain boundaries. The three types of the crystallization phase transition of the metal-type amorphous InSb present obviously different transportion hehaviours. The rise of superconducting Tc of the metastable crystalline metallic phase which corresponds to the peak of the second jump of the conductance originates possibly from the increase of the electron concentration.
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