THE STEP-RELATED ELECTRONIC STATES ON THE VICINAL SURFACES OF Si(001)

Journal Name:

Year:

Issue:

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

THE STEP-RELATED ELECTRONIC STATES ON THE VICINAL SURFACES OF Si(001)

Citation:

Next Previous

CHEN XIAO-HUA, XU YA-BO, W. RANKE, LI HAI-YANG, JI ZHEN-GUO

Acta Phys. Sin., 1987, 36(6): 807-813.

Abstract
Angle-resolved ultraviolet photoelectron spectroscopy has been used to investigate the step-related electronic states on the vicinal surfaces of Si(00l). Such states have been found at 0.5-0.6 eV below EF at Γ point (K = 0) for vicinal surfaces with steps along 〈100〉 or 〈110〉. The dispersion of these states is smaller than that of the (001) surface states.
Authors and contacts
CHEN XIAO-HUA²,

XU YA-BO²,

W. RANKE¹,

LI HAI-YANG²,

JI ZHEN-GUO³

(1)Fritz-Haber-Institut der MPG,F. R. G.; (2)浙江大学物理系; (3)浙江大学中心实验室
References

Cited By