EFFECT OF NONLINEAR GAIN AND WAVEGUIDE STRUCTURE ON THE LINEWIDTH OF SEMICONDUCTOR LASERS

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EFFECT OF NONLINEAR GAIN AND WAVEGUIDE STRUCTURE ON THE LINEWIDTH OF SEMICONDUCTOR LASERS

Citation:

GUO CHANG-ZHI, HUANG YONG-ZHEN

Acta Phys. Sin., 1989, 38(5): 699-705.

Abstract
The effect of nonlinear gain and waveguide structure on the modal linewidth broadening produced by with quantum phase noise in semiconductor lasers is inverstigated with semiclassical theory. It is shown that the modal linewidth depends not only on the linear gain but also on the third order nonlinear gain and the waveguide structure. Thus a new linewidth broadening enhancement factor and a new mechanism of the power-independent linewidth component are proposed.
Authors and contacts
GUO CHANG-ZHI,

HUANG YONG-ZHEN

1.
北京大学物理系
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