XPS AND AES STUDY FOR Au/a-Si:H INTERFACE

Journal Name:

Year:

Issue:

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

XPS AND AES STUDY FOR Au/a-Si:H INTERFACE

Citation:

Next Previous

ZHONG ZHAN-TIAN, WANG DA-WEN, LIAO XIAN-BO, FAN YUE, LI CHENG-FANG, MOU SHAN-MING

Acta Phys. Sin., 1991, 40(2): 275-280.

Abstract
The Au/a-Si:H contact has been investigated by XPS and AES. It is found that the metal cluster occurs, at initial formation process of Au/a-Si:H interface, and after exceeding the critical Au deposition value, the Vinterdiffusion and chemical reaction of Au and Si begin and Au-Si intermixing region is formed. Furthermore, the experimental results of photoemission study confirm that Si islands are formed after annealing the interface of Au/a-Si:H.
Authors and contacts
ZHONG ZHAN-TIAN²,

WANG DA-WEN¹,

LIAO XIAN-BO²,

FAN YUE³,

LI CHENG-FANG³,

MOU SHAN-MING³

(1)清华大学无线电电子学系; (2)中国科学院半导体研究所,北京,100083; (3)中国科学院表面物理实验室,北京,100080
References

Cited By