| [1] |
Geng Xin, Zhang Jie-Yin, Lu Wen-Long, Ming Ming, Liu Fang-Ze, Fu Bin-Xiao, Chu Yi-Xin, Yan Mou-Hui, Wang Bao-Chuan, Zhang Xin-Ding, Guo Guo-Ping, Zhang Jian-Jun. Epitaxy and characterization of undoped Si/SiGe heterojunctions. Acta Physica Sinica,
2024, 0(0): .
doi: 10.7498/aps.73.20240310
|
| [2] |
Huang Xin-Mei, He Xiao-Li, Xu Qiang, Chen Ping, Zhang Yong, Gao Chun-Hong. Ionic-compound based high performance perovskite light emitting diodes. Acta Physica Sinica,
2022, 71(20): 208502.
doi: 10.7498/aps.71.20220858
|
| [3] |
Wang Jing, Feng Lu, Hao Yi, Zhao Yang, Chen Zhen-Fei. Strain effect on the morphological instability of a circular island in heteroepitaxy. Acta Physica Sinica,
2013, 62(23): 238102.
doi: 10.7498/aps.62.238102
|
| [4] |
Li Rong-Bin. Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition. Acta Physica Sinica,
2009, 58(2): 1287-1292.
doi: 10.7498/aps.58.1287
|
| [5] |
Zhang Jin-Cheng, Dong Zuo-Dian, Qin Xue-Xue, Zheng Peng-Tian, Liu Lin-Jie, Hao Yue. Analysis of the leakage current in GaN-based heterostructure buffer layer. Acta Physica Sinica,
2009, 58(3): 1959-1965.
doi: 10.7498/aps.58.1959
|
| [6] |
Wang Hai-Yun, Weng Hui-Min, Ling C. C.. Study of GaN/SiC contact using slow positron beam. Acta Physica Sinica,
2008, 57(9): 5906-5910.
doi: 10.7498/aps.57.5906
|
| [7] |
Zhang Chao, Meng Yang, Yan Chao, Tang Xin, Wang Yong-Liang, Zhang Qing-Yu. Study on asymmetricall epitaxial behavior of Cu-Au system by molecular dynamics simulation. Acta Physica Sinica,
2007, 56(1): 452-458.
doi: 10.7498/aps.56.452
|
| [8] |
Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben. A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica,
2006, 55(7): 3606-3610.
doi: 10.7498/aps.55.3606
|
| [9] |
Sun Xian-Kai, Lin Bi-Xia, Zhu Jun-Jie, Zhang Yang, Fu Zhu-Xi. Studies on the strain and its effect on defects in heteroepitaxial ZnO films prepared by LP-OCVD method. Acta Physica Sinica,
2005, 54(6): 2899-2903.
doi: 10.7498/aps.54.2899
|
| [10] |
Meng Yang, Zhang Qing-Yu. Study on the evolution of Au heteroepitaxial islands on Cu(001) by molecular dynamics simulation. Acta Physica Sinica,
2005, 54(12): 5804-5813.
doi: 10.7498/aps.54.5804
|
| [11] |
Yao Wei, Qiu Zhi-Jun, Gui Yong-Sheng, Zheng Ze-Wei, Lü Jie, Tang Ning, Shen Bo, Chu Jun-Hao. Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure. Acta Physica Sinica,
2005, 54(5): 2247-2251.
doi: 10.7498/aps.54.2247
|
| [12] |
Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica,
2005, 54(11): 5450-5454.
doi: 10.7498/aps.54.5450
|
| [13] |
Feng Qian, Hao Yue, Zhang Xiao-Ju, Liu Yu-Long. Characterization of Mg-doped GaN. Acta Physica Sinica,
2004, 53(2): 626-630.
doi: 10.7498/aps.53.626
|
| [14] |
Wang Jian-Ping, Hao Yue, Peng Jun, Zhu Zuo-Yun, Zhang Yong-Hua. . Acta Physica Sinica,
2002, 51(8): 1793-1797.
doi: 10.7498/aps.51.1793
|
| [15] |
KANG JIAN, XIAO CHANG-YONG, XIONG YAN-YUN, FENG KE-AN, LIN ZHANG-DA. THE EFFECT OF ATOMIC OF HYDROGEN IN THE INITIAL PROCEDURE OF DIAMOND HETEROEPITAXY ON Si AND THE INTERFACE BETWEEN DIAMOND AND Si. Acta Physica Sinica,
1999, 48(11): 2104-2109.
doi: 10.7498/aps.48.2104
|
| [16] |
KANG JUN-YONG, HUANG QI-SHENG, T.OGAWA. DEFECTS IN GaN EPILAYERS. Acta Physica Sinica,
1999, 48(7): 1372-1380.
doi: 10.7498/aps.48.1372
|
| [17] |
ZHANG HAO-XIANG, LU HUAN-MING, YE ZHI-ZHEN, ZHAO BING-HUI, WANG LEI, QUE DUAN-LIN. SECONDARY ION MASS SPECTROSCOPY AND PHOTOLUMINESCENCE INVESTIGATIONS ON THE GaN EPILAYER GROWN ON Si SUBSTRATE. Acta Physica Sinica,
1999, 48(7): 1315-1319.
doi: 10.7498/aps.48.1315
|
| [18] |
ZHU HAI-JUN, JIANG ZUI-MIN, ZHENG WEN-LI, JIANG XIAO-MING, XU A-MEI, MAO MING-CHUN, HUDONG ZHI, ZHANG XIANG-JIU, WANG XUN. SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION. Acta Physica Sinica,
1997, 46(9): 1796-1800.
doi: 10.7498/aps.46.1796
|
| [19] |
ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN. A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica,
1991, 40(11): 1827-1832.
doi: 10.7498/aps.40.1827
|
| [20] |
. INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1989, 38(8): 1265-1270.
doi: 10.7498/aps.38.1265
|
下载:
