BaF2 Crystal was irradiated with 27keV Ar＋ ions along the normal of (111), (100) and (110) planes at a current density of １０17μA／ｃｍ2. Using collector technique and RBS analysis, the angular distribution and yield of Ba atoms sputtered from BaF2 crystal have been measured as a fuction of orientation and ion fluence. The obtained angular distributions of Ba atoms sputtered are over-cosine type for all specimens. The sputtering yields were strongly dependent on the fluence of the incident beam on the targets
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