A hybrid conduction analysis method mixed with multi carrier fitting procedure and mobility spectrum is present to analyze the experimental Hall and resistivity data of MBE grown Hg1-xCdxTe samples as a function of magnetic field.This method enables the conductivity contribution of bulk electron to separated from that of interface electron.Applications to temperature dependent Hall and resistivity data confirm that the procedure may be regarded accurate and reliable one.The method seems to be a suitable tool for the routine electrical characterization of semiconductor materials and devices.
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