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SIMULATION OF THE INITIAL GROWTH OF METAL THIN FILMS AT HIGH TEMPERATURE

WU FENG-MIN SHI JIAN-QING WU ZI-QIN

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SIMULATION OF THE INITIAL GROWTH OF METAL THIN FILMS AT HIGH TEMPERATURE

WU FENG-MIN, SHI JIAN-QING, WU ZI-QIN
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  • The atomic processes of nucleation and initial growth of thin films on metal surfaces are simulated by Monte Carlo method,using realistic growth model-Fe on Fe (001) surface and physical parameters.By taking into account the physical processes involved in film growth,such as deposition,diffusion,nucleation,growth,evaporation,edge diffusion and coalescence,the morphology and quantitative characteristies of thin film growth are obtained.The details of thin film growth at high substrate temperatures,such as the change of island density and growth rate with temperature and coverage,are obtained by making statistical counting during the growth processes,which are difficult to access directly in real experiments.
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  • Abstract views:  6806
  • PDF Downloads:  963
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Publishing process
  • Received Date:  07 December 2000
  • Accepted Date:  12 March 2001
  • Published Online:  05 April 2001

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