SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD

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SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD

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HU YING

Acta Phys. Sin., 2001, 50(12): 2452-2455.

Abstract
Silicon carbide nanowires have been grown on single crystal silicon wafers by using microwave plasma chemical vapor deposition method. The nanowires are analyzed by scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy and low-energy electron diffraction methods. The growth mechanism of nanowires is proposed.

Keywords:
MPCVD /

SiC nanowires /

growth mechanism
Authors and contacts
HU YING

1.
首都师范大学物理系,北京100037
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