| [1] |
Zhu Xiao-Li, Qiu Peng, Wei Hui-Yun, He Ying-Feng, Liu Heng, Tian Feng, Qiu Hong-Yu, Du Meng-Chao, Peng Ming-Zeng, Zheng Xin-He. Theoretical analysis of GaN-based semiconductor in changing performanc of perovskite solar cell. Acta Physica Sinica,
2023, 72(10): 107702.
doi: 10.7498/aps.72.20230100
|
| [2] |
Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica,
2015, 64(18): 187801.
doi: 10.7498/aps.64.187801
|
| [3] |
Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi. Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica,
2014, 63(21): 217806.
doi: 10.7498/aps.63.217806
|
| [4] |
Chen Jun, Fan Guang-Han, Zhang Yun-Yan. The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica,
2012, 61(17): 178504.
doi: 10.7498/aps.61.178504
|
| [5] |
Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun. Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica,
2012, 61(22): 227303.
doi: 10.7498/aps.61.227303
|
| [6] |
Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen. Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica,
2011, 60(2): 028503.
doi: 10.7498/aps.60.028503
|
| [7] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica,
2010, 59(2): 1268-1274.
doi: 10.7498/aps.59.1268
|
| [8] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica,
2010, 59(7): 5002-5009.
doi: 10.7498/aps.59.5002
|
| [9] |
Huang Tong-De, Jiang Ben-Xue, Wu Yu-Song, Li Jiang, Shi Yun, Liu Wen-Bin, Pan Yu-Bai, Huang Li-Ping, Guo Jing-Kun. Fabrication of Yb3+,Er3+:YAG transparent ceramics and study of its 1.5 μm fluorescence spectrum. Acta Physica Sinica,
2009, 58(2): 1298-1304.
doi: 10.7498/aps.58.1298
|
| [10] |
Pan Xiao-Jun, Zhang Zhen-Xing, Wang Tao, Li Hui, Xie Er-Qing. Room temperature visible photoluminescence from nanocrystalline GaN∶Er film prepared by sputtering. Acta Physica Sinica,
2008, 57(6): 3786-3790.
doi: 10.7498/aps.57.3786
|
| [11] |
Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica,
2008, 57(2): 1128-1132.
doi: 10.7498/aps.57.1128
|
| [12] |
Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan. Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate. Acta Physica Sinica,
2008, 57(5): 3176-3181.
doi: 10.7498/aps.57.3176
|
| [13] |
Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2007, 56(10): 6003-6007.
doi: 10.7498/aps.56.6003
|
| [14] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica,
2007, 56(3): 1621-1626.
doi: 10.7498/aps.56.1621
|
| [15] |
Zhu Zhen-Hua, Lei Ming-Kai. Structure and photoluminescence of Er3+-doped Al2O3 composite powders by mixing with SiO2. Acta Physica Sinica,
2006, 55(9): 4956-4961.
doi: 10.7498/aps.55.4956
|
| [16] |
Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica,
2006, 55(6): 2977-2981.
doi: 10.7498/aps.55.2977
|
| [17] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
doi: 10.7498/aps.55.1407
|
| [18] |
Li Shan-Feng, Zhang Qing-Yu. Absorption and photoluminescence properties Er/Yb co-doped soda-silicate glasses. Acta Physica Sinica,
2005, 54(11): 5462-5467.
doi: 10.7498/aps.54.5462
|
| [19] |
Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica,
2002, 51(3): 629-634.
doi: 10.7498/aps.51.629
|
| [20] |
YUAN FANG-CHENG, RAN GUANG-ZHAO, CHAN YUAN, ZHANG BO-RUI, QIAO YONG-PING, FU JI-SHI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA. ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING. Acta Physica Sinica,
2001, 50(12): 2487-2491.
doi: 10.7498/aps.50.2487
|
下载:
