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Wang Xue-Ting, Fu Yu-Hao, Na Guang-Ren, Li Hong-Dong, Zhang Li-Jun. Barium as doping element tuning both toxicity and optoelectric properties of lead-based halide perovskites. Acta Physica Sinica,
2019, 68(15): 157101.
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Jia Wan-Li, Zhou Miao, Wang Xin-Mei, Ji Wei-Li. First-principles study on the optical properties of Fe-doped GaN. Acta Physica Sinica,
2018, 67(10): 107102.
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Wang Jian, Chuai Rong-Yan. Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration. Acta Physica Sinica,
2017, 66(24): 247201.
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Xu Jia-Jia, Hu Chun-Guang, Chen Xue-Jiao, Zhang Lei, Fu Xing, Hu Xiao-Tang. Study on in-situ real-time measurement for thin film growth of organic semiconductors. Acta Physica Sinica,
2015, 64(23): 230701.
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Yuan Wen-Rui, Li Yi, Wang Xiao-Hua, Zheng Hong-Zhu, Chen Shao-Juan, Chen Jian-Kun, Sun Yao, Tang Jia-Yin, Liu Fei, Hao Ru-Long, Fang Bao-Ying, Xiao Han. Fabrication and optical-electrical properties of VO2/AZO composite films. Acta Physica Sinica,
2014, 63(21): 218101.
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He Qiong, Xu Xiang-Dong, Wen Yue-Jiang, Jiang Ya-Dong, Ao Tian-Hong, Fan Tai-Jun, Huang Long, Ma Chun-Qian, Sun Zi-Qiang. Growth mechanism and optoelectronic properties of vanadium oxide films prepared by Sol-Gel. Acta Physica Sinica,
2013, 62(5): 056802.
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Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming. Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica,
2012, 61(19): 198101.
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Yu Zhi-Qiang. Electronic structure and photoelectric properties of OsSi2 epitaxially grown on a Si(111) substrate. Acta Physica Sinica,
2012, 61(21): 217102.
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Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang. Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica,
2012, 61(2): 028104.
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Zhang Zhi-Guo. SnO2:(Cu,In) films with high transmittance in ultraviolet region. Acta Physica Sinica,
2010, 59(11): 8172-8177.
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Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen. Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica,
2010, 59(4): 2775-2782.
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Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen. Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica,
2009, 58(9): 6560-6565.
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Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen. The research on metal induced crystallization with chemical source. Acta Physica Sinica,
2006, 55(2): 825-829.
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong. Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica,
2006, 55(5): 2523-2528.
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Hao Hui-Ying, Kong Guang-Lin, Zeng Xiang-Bo, Xu Ying, Diao Hong-Wei, Liao Xian-Bo. Transition films from amporphous to microcrystalline silicon and solar cells. Acta Physica Sinica,
2005, 54(7): 3327-3331.
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Li Jun-Jie, Wu Han-Hua, Long Bei-Yu, Lü Xian-Yi, Hu Chao-Quan, Jin Zeng-Sun. The effect of nitrogen-implantation on the field-emission properties of CVD diamond films. Acta Physica Sinica,
2005, 54(3): 1447-1451.
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Gu Jin-Hua, Zhou Yu-Qin, Zhu Mei-Fang, Li Guo-Hua, Ding Kun, Zhou Bing-Qing, Liu Feng-Zhen, Liu Jin-Long, Zhang Qun-Fang. Study on growth mechanism of low-temperature prepared microcrystalline Si thin f ilms. Acta Physica Sinica,
2005, 54(4): 1890-1894.
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Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying. The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica,
2005, 54(8): 3805-3809.
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Yao Ruo-He, Huang Wen-Yong, Wei Jun-Hong, Wang Zhao-Kui, Yu Chu-Ying. Control of grain size during low-temperature growth of polycrystalline silicon films. Acta Physica Sinica,
2004, 53(11): 3950-3955.
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HE DE-YAN. CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS. Acta Physica Sinica,
2001, 50(4): 779-783.
doi: 10.7498/aps.50.779
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