| [1] |
Zhou Zhan-Hui, Li Qun, He Xiao-Min. Electron transport mechanism in AlN/β-Ga2O3 heterostructures. Acta Physica Sinica,
2023, 72(2): 028501.
doi: 10.7498/aps.72.20221545
|
| [2] |
Ran Feng, Liang Yan, Jiandi Zhang. Quasi-two-dimensional superconductivity at oxide heterostructures. Acta Physica Sinica,
2023, 72(9): 097401.
doi: 10.7498/aps.72.20230044
|
| [3] |
Zhou Shu-Xing, Fang Ren-Feng, Wei Yan-Feng, Chen Chuan-Liang, Cao Wen-Yu, Zhang Xin, Ai Li-Kun, Li Yu-Dong, Guo Qi. Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability. Acta Physica Sinica,
2022, 71(3): 037202.
doi: 10.7498/aps.71.20211265
|
| [4] |
Zhao Li-Li, Wu Meng-Meng, Lin Wen-Lu, Liu Yang. Contactless transport method of two-dimensional electron system studies. Acta Physica Sinica,
2022, 71(12): 127303.
doi: 10.7498/aps.71.20220246
|
| [5] |
Zhang Xue-Bing, Liu Nai-Zhang, Yao Ruo-He. Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2020, 69(15): 157303.
doi: 10.7498/aps.69.20200250
|
| [6] |
Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen. Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica,
2019, 68(16): 166801.
doi: 10.7498/aps.68.20191074
|
| [7] |
Li Qun, Chen Qian, Chong Jing. Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica,
2018, 67(2): 027303.
doi: 10.7498/aps.67.20171827
|
| [8] |
Wu Kong-Ping, Qi Jian, Peng Bo, Tang Kun, Ye Jian-Dong, Zhu Shun-Ming, Gu Shu-Lin. Polarization properties of wurtzite structure Zn1-xMgxO and band offset at Zn0.75Mg0.25O/ZnO interfaces: A GGA+U investigation. Acta Physica Sinica,
2015, 64(18): 187304.
doi: 10.7498/aps.64.187304
|
| [9] |
Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong. Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica,
2014, 63(8): 080202.
doi: 10.7498/aps.63.080202
|
| [10] |
Li Jia-Dong, Cheng Jun-Jie, Miao Bin, Wei Xiao-Wei, Zhang Zhi-Qiang, Li Hai-Wen, Wu Dong-Min. Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors. Acta Physica Sinica,
2014, 63(7): 070204.
doi: 10.7498/aps.63.070204
|
| [11] |
Niu Hai-Bo, Chen Guang-De, Wu Ye-Long, Ye Hong-Gang. Influence of vacancy on spontaneous polarization of wurtzite AlN： a maximally localized Wannierfunction study. Acta Physica Sinica,
2014, 63(16): 167701.
doi: 10.7498/aps.63.167701
|
| [12] |
Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
doi: 10.7498/aps.62.207303
|
| [13] |
Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou. Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica,
2013, 62(15): 150202.
doi: 10.7498/aps.62.150202
|
| [14] |
Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao. Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure. Acta Physica Sinica,
2012, 61(23): 237302.
doi: 10.7498/aps.61.237302
|
| [15] |
Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei. Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica,
2012, 61(21): 217302.
doi: 10.7498/aps.61.217302
|
| [16] |
Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117305.
doi: 10.7498/aps.60.117305
|
| [17] |
Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117304.
doi: 10.7498/aps.60.117304
|
| [18] |
Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming. The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica,
2007, 56(10): 6013-6018.
doi: 10.7498/aps.56.6013
|
| [19] |
Zhu Bo, Gui Yong-Sheng, Zhou Wen-Zheng, Shang Li-Yan, Guo Shao-Ling, Chu Jun-Hao, Lü Jie, Tang Ning, Shen Bo, Zhang Fu-Jia. The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas. Acta Physica Sinica,
2006, 55(5): 2498-2503.
doi: 10.7498/aps.55.2498
|
| [20] |
Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin. Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures. Acta Physica Sinica,
2003, 52(7): 1756-1760.
doi: 10.7498/aps.52.1756
|
下载:
