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The fabrication and properties of InAs/GaAs columnal islands

Zhu Tian-Wei Xu Bo He Jun Zhao Feng-Ai Zhang Chun-Ling Xie Er-Qing Liu Feng-Qi Wang Zhan-Guo

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The fabrication and properties of InAs/GaAs columnal islands

Zhu Tian-Wei, Xu Bo, He Jun, Zhao Feng-Ai, Zhang Chun-Ling, Xie Er-Qing, Liu Feng-Qi, Wang Zhan-Guo
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  • A columnal islands system, which was composed of three layers of self-assembled InAs/GaAs quantum dots (QDs), has been fabricated by solid-source molecular beam epitaxy (MBE) through S-K mode on a (100) semi-insulating GaAs substrate. The effects of the thickness of GaAs space layer, the growth interruption time and the amount of InAs deposition on the emission wavelength of columnal islands were presented. The image of atomic force microscopy (AFM) indicated the columnal islands with high uniformity in size and shape. At room temperature, the emission wavelength of columnal islands with different effective heights was achieved 1.32 and 1.4μm; however, the emission wavelength of single-layer QDs with normal height was just 1.1μm. It provides a useful and intuitive approach to artificially control the emission wavelength of a QD material system.
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  • Abstract views:  6446
  • PDF Downloads:  647
  • Cited By: 0
Publishing process
  • Received Date:  21 February 2003
  • Accepted Date:  17 April 2003
  • Published Online:  15 January 2004

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