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Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li. A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica,
2022, 71(19): 198501.
doi: 10.7498/aps.71.20220879
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Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong. Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica,
2021, 70(3): 037102.
doi: 10.7498/aps.70.20200921
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Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei. -ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica,
2016, 65(20): 207301.
doi: 10.7498/aps.65.207301
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Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A Model of channel current for uniaxially strained Si NMOSFET. Acta Physica Sinica,
2015, 64(19): 197301.
doi: 10.7498/aps.64.197301
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Liu Bin-Li, Tang Yong, Luo Yi-Fei, Liu De-Zhi, Wang Rui-Tian, Wang Bo. Investigation of the prediction model of IGBT junction temperature based on the rate of voltage change. Acta Physica Sinica,
2014, 63(17): 177201.
doi: 10.7498/aps.63.177201
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu. Physical compact modeling for threshold voltage of strained Si NMOSFET. Acta Physica Sinica,
2013, 62(7): 077103.
doi: 10.7498/aps.62.077103
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Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong. Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate. Acta Physica Sinica,
2011, 60(5): 058502.
doi: 10.7498/aps.60.058502
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica,
2011, 60(1): 017103.
doi: 10.7498/aps.60.017103
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Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men. Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica,
2011, 60(3): 037808.
doi: 10.7498/aps.60.037808
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Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun. Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica,
2009, 58(7): 4948-4952.
doi: 10.7498/aps.58.4948
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming. The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2009, 58(1): 494-497.
doi: 10.7498/aps.58.494
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Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu. Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica,
2008, 57(10): 6649-6653.
doi: 10.7498/aps.57.6649
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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica,
2007, 56(6): 3504-3508.
doi: 10.7498/aps.56.3504
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Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng. 2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica,
2006, 55(7): 3670-3676.
doi: 10.7498/aps.55.3670
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan. An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica,
2006, 55(11): 6090-6094.
doi: 10.7498/aps.55.6090
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E. An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica,
2005, 54(2): 897-901.
doi: 10.7498/aps.54.897
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming. The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica,
2003, 52(10): 2541-2546.
doi: 10.7498/aps.52.2541
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Zhang Hong-Tao, Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin. . Acta Physica Sinica,
2002, 51(2): 304-309.
doi: 10.7498/aps.51.304
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Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming. . Acta Physica Sinica,
2002, 51(1): 148-152.
doi: 10.7498/aps.51.148
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Xu Chang-Fa, Yang Yin-Tang, Liu Li. . Acta Physica Sinica,
2002, 51(5): 1113-1117.
doi: 10.7498/aps.51.1113
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