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Lu Bin, Wang Da-Wei, Chen Yu-Lei, Cui Yan, Miao Yuan-Hao, Dong Lin-Peng. Capacitance model for nanowire gate-all-around tunneling field-effect-transistors. Acta Physica Sinica,
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2020, 69(10): 100502.
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Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming. Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2017, 66(7): 076101.
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Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2014, 63(23): 237304.
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Chen Hai-Feng. Characteristics of gate-modulated generation current under the reverse substrate bias in nano-nMOSFET. Acta Physica Sinica,
2013, 62(18): 188503.
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Wan Ning, Guo Chun-Sheng, Zhang Yan-Feng, Xiong Cong, Ma Wei-Dong, Shi Lei, Li Rui, Feng Shi-Wei. Gate current degradation model of the AlGaAs/InGaAs PHEMT. Acta Physica Sinica,
2013, 62(15): 157203.
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica,
2012, 61(2): 027202.
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Chen Hai-Feng, Guo Li-Xin. Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET's. Acta Physica Sinica,
2012, 61(2): 028501.
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2011, 60(2): 027305.
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong. An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica,
2011, 60(9): 097302.
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu. The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics. Acta Physica Sinica,
2008, 57(4): 2524-2528.
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Zhu Zhi-Wei, Hao Yue, Ma Xiao-Hua, Cao Yan-Rong, Liu Hong-Xia. Investigation of snapback stress induced gate oxide defect for NMOSFET’s in 90 nm technology. Acta Physica Sinica,
2007, 56(2): 1075-1081.
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Chen Wei-Bing, Xu Jing-Ping, Zou Xiao, Li Yan-Ping, Xu Sheng-Guo, Hu Zhi-Fu. Analytic tunneling-current model of small-scale MOSFETs. Acta Physica Sinica,
2006, 55(10): 5036-5040.
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Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju. The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica,
2006, 55(11): 6118-6122.
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica,
2003, 52(8): 2046-2051.
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2002, 51(1): 163-166.
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LIU HONG-XIA, FANG JIAN-PING, HAO YUE. EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(6): 1172-1177.
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LIU HONG-XIA, HAO YUE. STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(9): 1769-1773.
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MAO LING-FENG, TAN CHANG-HUA, XU MING-ZHEN, WEI JIN-LIN. STUDY OF FOWLER-NORDHEIM TUNNELING CURRENT OSCILLATIONS IN ULTRA-THIN INSULATOR MOS STRUCTURE BY INTERFERENCE METHOD. Acta Physica Sinica,
2000, 49(5): 974-982.
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LIU HONG-XIA, HAO YUE. STUDY ON PARAMETER CHARACTERIZATION OF THIN GATE OXIDE TDDB BREAKDOWN. Acta Physica Sinica,
2000, 49(6): 1163-1167.
doi: 10.7498/aps.49.1163
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