Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak

Wang Ying-Long Lu Li-Fang Yan Chang-Yu Chu Li-Zhi Zhou Yang Fu Guang-Sheng Peng Ying-Cai

Citation:

The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak

Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng, Peng Ying-Cai
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • The single crystalline Si target with high resistivity was ablated by a XeCl excimer laser (laser fluence 4J/cm2, repetition rate 1Hz), and at the ambient pressure of 10Pa of pure Ar gas, the nanocrystalline silicon film was deposited on a glass or single crystalline (111) Si substrate located at a distance of 3cm from the Si target in 30 and 10min, respectively. The Raman and x-ray diffraction spectra of the film deposited on the glass substrate indicate the film is nanocrystalline, which means that it is composed of Si nanoparticles. Scanning electron microscopy of the film on the Si substrate shows that the film has the mosaic structure of Si nano-crystallites of uniform size. The photoluminescence peak wavelength is 599nm with full width at half maximum of 56nm, which is blue-shifted and narrower than that obtained in He gas.
Metrics
  • Abstract views:  7625
  • PDF Downloads:  1016
  • Cited By: 0
Publishing process
  • Received Date:  14 January 2005
  • Accepted Date:  25 April 2005
  • Published Online:  05 June 2005

/

返回文章
返回