The effect of biexciton, wetting layer leakage and Auger capture on Rabi oscillation damping in quantum dots

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Abstract
The decoherence of Rabi oscillation with multi-level processes in semiconductor quantum dots excited by laser pulses is investigated. By using population dynamic equations of multi-level system, the effect of three kinds of multi-level processes on the damping of Rabi oscillation in quantum dots are numerically simulated and discussed. The effect of biexciton can be neglected when the pulse width is larger than 5ps; the population leakage to wetting layer results in the decreasing of the amplitude and average of the population oscillation on the exciton ground state with the increasing of the excitation intensity; the effect of the two kinds of Auger capture processes on the Rabi oscillation and the spectral width of the photoluminescence from the exciton recombination are also discussed.

Keywords:
Rabi oscillation /

semiconductor quantum dots /

decoherence /

Auger capture
Authors and contacts
Liu Shao-Ding¹,

Cheng Mu-Tian¹,

Zhou Hui-Jun¹,

Li Yao-Yi²,

Wang Qu-Quan¹,

Xue Qi-Kun³

(1)武汉大学物理系，武汉 430072; (2)武汉大学物理系，武汉 430072；中国科学院物理研究所，国际量子结构中心，北京 100080; (3)中国科学院物理研究所，国际量子结构中心，北京 100080
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