| [1] |
Liu Yuan-Feng, Li Bin-Cheng, Zhao Bin-Xing, Liu Hong. Detection of subsurface defects in silicon carbide bulk materials with photothermal radiometry. Acta Physica Sinica,
2023, 72(2): 024208.
doi: 10.7498/aps.72.20221303
|
| [2] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica,
2022, 71(5): 058102.
doi: 10.7498/aps.71.20211796
|
| [3] |
Yu Zi-Heng, Ma Chun-Hong, Bai Shao-Xian. Effect of sharp edge of ring-groove-structures in SiC surface. Acta Physica Sinica,
2021, 70(4): 044702.
doi: 10.7498/aps.70.20201303
|
| [4] |
Huang Yi-Hua, Jiang Dong-Liang, Zhang Hui, Chen Zhong-Ming, Huang Zheng-Ren. Ferromagnetism of Al-doped 6H-SiC and theoretical calculation. Acta Physica Sinica,
2017, 66(1): 017501.
doi: 10.7498/aps.66.017501
|
| [5] |
Lu Wu-Yue, Zhang Yong-Ping, Chen Zhi-Zhan, Cheng Yue, Tan Jia-Hui, Shi Wang-Zhou. Effect of different annealing treatment methods on the Ni/SiC contact interface properties. Acta Physica Sinica,
2015, 64(6): 067303.
doi: 10.7498/aps.64.067303
|
| [6] |
Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica,
2014, 63(20): 208501.
doi: 10.7498/aps.63.208501
|
| [7] |
Gao Shang-Peng, Zhu Tong. Quasiparticle band structure calculation for SiC using self-consistent GW method. Acta Physica Sinica,
2012, 61(13): 137103.
doi: 10.7498/aps.61.137103
|
| [8] |
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica,
2012, 61(2): 027202.
doi: 10.7498/aps.61.027202
|
| [9] |
Zhao Cheng-Li, Lü Xiao-Dan, Ning Jian-Ping, Qing You-Min, He Ping-Ni, Gou Fu-Jun. Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100). Acta Physica Sinica,
2011, 60(9): 095203.
doi: 10.7498/aps.60.095203
|
| [10] |
Han Ru, Fan Xiao-Ya, Yang Yin-Tang. Temperature-dependent Raman property of n-type SiC. Acta Physica Sinica,
2010, 59(6): 4261-4266.
doi: 10.7498/aps.59.4261
|
| [11] |
Zhang Yong, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng, Yang Yi-Tao. Study on nanohardness of helium-implanted 4H-SiC. Acta Physica Sinica,
2010, 59(6): 4130-4135.
doi: 10.7498/aps.59.4130
|
| [12] |
Zhang Yun, Shao Xiao-Hong, Wang Zhi-Qiang. A first principle study on p-type doped 3C-SiC. Acta Physica Sinica,
2010, 59(8): 5652-5660.
doi: 10.7498/aps.59.5652
|
| [13] |
Jin Hua, An Li-Nan, Bu Fan-Liang, Li Li-Hua, Wang Rong, Yang Wei-You, Zhang Li-Gong. Study of ultraviolet photoluminescence from SiC nanorods. Acta Physica Sinica,
2009, 58(4): 2594-2598.
doi: 10.7498/aps.58.2594
|
| [14] |
Liu Fu, Zhou Ji-Cheng, Tan Xiao-Chao. First-principles study on 3C-SiC(001)-(2×1)surface atomic structure and electronic structure. Acta Physica Sinica,
2009, 58(11): 7821-7825.
doi: 10.7498/aps.58.7821
|
| [15] |
Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica,
2009, 58(5): 3443-3447.
doi: 10.7498/aps.58.3443
|
| [16] |
Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa. Study on the chemical states of the surface of SiC epilayer. Acta Physica Sinica,
2008, 57(7): 4119-4124.
doi: 10.7498/aps.57.4119
|
| [17] |
Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa. The study of optimal fitting parameter for C 1s spectra of SiC surface. Acta Physica Sinica,
2008, 57(7): 4125-4129.
doi: 10.7498/aps.57.4125
|
| [18] |
Xu Peng-Shou, Li Yong-Hua, Pan Hai-Bin. First principle study on β-SiC(001)-(2×1) surface structure. Acta Physica Sinica,
2005, 54(12): 5824-5829.
doi: 10.7498/aps.54.5824
|
| [19] |
Shang Ye-Chun, Liu Zhong-Li, Wang Shu-Rui. Study on the reverse characteristics of Ti/6H-SiC Schottky contacts. Acta Physica Sinica,
2003, 52(1): 211-216.
doi: 10.7498/aps.52.211
|
| [20] |
Jiang Zhen-Yi, Xu Xiao-Hong, Wu Hai-Shun, Zhang Fu-Qiang, Jin Zhi-Hao. . Acta Physica Sinica,
2002, 51(7): 1586-1590.
doi: 10.7498/aps.51.1586
|
下载:
