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Poly-SiGe films prepared by metal-induced growth using UHVCVD system

Wu Gui-Bin Ye Zhi-Zhen Zhao Xing Liu Guo-Jun Zhao Bin-Hui

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Poly-SiGe films prepared by metal-induced growth using UHVCVD system

Wu Gui-Bin, Ye Zhi-Zhen, Zhao Xing, Liu Guo-Jun, Zhao Bin-Hui
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  • Poly-SiGe films were prepared by a metal-induced growth technique with ultrahigh vacuum chemical vapor deposition(UHVCVD) at low temperature. The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM. The influences of varying the thickness of Ni prelayer and the growth parameters on poly-SiGe films were investigated. It is shown that thicker Ni(≥10nm) has an obvious effect on poly-SiGe growth at 420—500℃. And for the samples with 60nm thick Ni layers, poly-SiGe deposition yields a continuous, highly crystalline film with good morphology.
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  • Abstract views:  7072
  • PDF Downloads:  1313
  • Cited By: 0
Publishing process
  • Received Date:  31 August 2005
  • Accepted Date:  15 January 2006
  • Published Online:  20 July 2006

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