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Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao. Establishment of Analytical Model for the Gate to Source Capacitance of Power MOSFET. Acta Physica Sinica,
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Zhang Zhao-Quan, Shi Peng-Peng, Gou Xiao-Fan. Analytical model of magnetic Barkhausen stress test of ferromagnetic plates. Acta Physica Sinica,
2022, 71(9): 097501.
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Zhang Qing, Wu Xin-Jun. Analytical modeling for the plate with a flat-bottom hole based on the reflection and transmission theory in pulsed eddy current testing. Acta Physica Sinica,
2017, 66(3): 038102.
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Li Shi-Song, Zhang Zhong-Hua, Zhao Wei, Huang Song-Ling, Fu Zhuang. Analytical model of electrostatic force generated by edge effect of a Kelvin capacitor based on conformal transformation. Acta Physica Sinica,
2015, 64(6): 060601.
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Zhang Na, Cao Meng, Cui Wan-Zhao, Hu Tian-Cun, Wang Rui, Li Yun. Analytical model of secondary electron yield from metal surface with regular structures. Acta Physica Sinica,
2015, 64(20): 207901.
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Wu Liang-Hai, Zhang Jun, Fan Zhi-Guo, Gao Jun. An analytical model for skylight polarization pattern with multiple scattering. Acta Physica Sinica,
2014, 63(11): 114201.
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Liang Jing-Hui, Zhang Xiao-Feng, Qiao Ming-Zhong, Xia Yi-Hui, Li Geng, Chen Jun-Quan. Analytic model of discrete random magnetizing Halbach PM motor. Acta Physica Sinica,
2013, 62(15): 150501.
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen. Analytical modeling for drain current of strained Si NMOSFET. Acta Physica Sinica,
2013, 62(23): 237103.
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Su Li-Na, Gu Xiao-Feng, Qin Hua, Yan Da-Wei. Analytical I-V model and numerical analysis of single electron transistor. Acta Physica Sinica,
2013, 62(7): 077301.
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Huang Yuan, Xu Jing-Ping, Wang Li-Sheng, Zhu Shu-Yan. Effects of different scattering mechanisms on inversion-channel electron mobility in Al2O3/InxGa1-xAs nMOSFET. Acta Physica Sinica,
2013, 62(15): 157201.
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Han Ming-Jun, Ke Dao-Ming, Chi Xiao-Li, Wang Min, Wang Bao-Tong. A 2D semi-analytical model for the potential distribution of ultra-short channel MOSFET. Acta Physica Sinica,
2013, 62(9): 098502.
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Cao Lei, Liu Hong-Xia, Wang Guan-Yu. Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica,
2012, 61(1): 017105.
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Liu Bao-Jun, Cai Li. Analytical model of single event crosstalk in near space. Acta Physica Sinica,
2012, 61(19): 196103.
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Li Cong, Zhuang Yi-Qi, Han Ru, Zhang Li, Bao Jun-Lin. Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain. Acta Physica Sinica,
2012, 61(7): 078504.
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Liu Jing-Wang, Du Zhen-Hui, Li Jin-Yi, Qi Ru-Bin, Xu Ke-Xin. Analytical model for the tuning characteristics of static, dynamic, and transient behaviors in temperature and injection current of DFB laser diodes. Acta Physica Sinica,
2011, 60(7): 074213.
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Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica,
2011, 60(11): 116103.
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong. 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric. Acta Physica Sinica,
2008, 57(6): 3807-3812.
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Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping. A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica,
2005, 54(5): 2118-2122.
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Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2003, 52(10): 2553-2557.
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2002, 51(5): 1113-1117.
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